Influence of Highly Charged Ion Irradiation on the Electrical and Memory Properties of Black Phosphorus Field‐Effect Transistors DOI Creative Commons
Stephan Sleziona, Osamah Kharsah, Lucia Skopinski

et al.

Advanced Electronic Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Aug. 12, 2024

Abstract Black phosphorus (bP) is one of the more recently discovered layered materials. Utilizing hysteresis in transfer characteristics bP field‐effect transistors (FETs), several approaches to realize non‐volatile memory devices are successfully demonstrated. This commonly attributed charge trapping and detrapping impurities defects whose nature location device however unclear. In this work, deliberately introduced into FETs by irradiating with highly charged Xe 30 + at a kinetic energy 180 20 keV manipulate their electrical properties. The results show for ion higher an increase conductance p‐doping up 1.2 · 10 12 cm −2 increasing fluence, while carrier mobility degrades fluences. Most notably, hysteresis' width window observed due irradiation. By controlling ions, it can be demonstrated, that modifications electronic properties arise from underlying SiO 2 substrate. However, changes hysteretic exclusively irradiation‐induced substrate, so irradiation significantly improve based devices.

Language: Английский

Memory effect and coexistence of negative and positive photoconductivity in black phosphorus field effect transistor for neuromorphic vision sensors DOI Creative Commons
Arun Kumar, Kimberly Intonti, Loredana Viscardi

et al.

Materials Horizons, Journal Year: 2024, Volume and Issue: 11(10), P. 2397 - 2405

Published: Jan. 1, 2024

Black phosphorus (BP) field-effect transistors with ultrathin channels exhibit unipolar p-type electrical conduction over a wide range of temperatures and pressures.

Language: Английский

Citations

17
Review: photothermal effect of two-dimensional flexible materials DOI
Xiaohui Ye,

Yurong Li,

Miaomiao Wei

et al.

Journal of Materials Science, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 9, 2025

Language: Английский

Citations

2
Optoelectronic memory in 2D MoS2 field effect transistor DOI Creative Commons
Arun Kumar, Enver Faella, O. Durante

et al.

Journal of Physics and Chemistry of Solids, Journal Year: 2023, Volume and Issue: 179, P. 111406 - 111406

Published: April 25, 2023

2D layered materials with their tunable bandgap and unique crystal structures are excellent candidates for optoelectronic memories. In this work, we present a simple approach the realization of nonvolatile memory device based on MoS2 transistor light induced charge storage capability. The shows 108 on/off current ratio hysteresis width modulation by air pressure under normal quiet measurement conditions. Moreover, persistent photoconductivity exhibits photo responsive performance switching two orders magnitude photocurrent that increases linearly incident power. We show combination gate voltage can be used to control increase window magnitude. obtained results significant step toward improvement devices, showing enable multilevel device.

Language: Английский

Citations

28
Type II Homo-Type Bi2O2Se Nanosheet/InSe Nanoflake Heterostructures for Self-Driven Broadband Visible–Near-Infrared Photodetectors DOI
Zhiyang Zhang, Lixiang Han, Zhiying Dan

et al.

ACS Applied Nano Materials, Journal Year: 2023, Volume and Issue: 6(6), P. 4573 - 4583

Published: March 3, 2023

Bi2O2Se nanosheets, an emerging ternary non-van der Waals two-dimensional (2D) material, have garnered considerable research attention in recent years owing to their robust air stability, narrow indirect bandgap, high mobility, and diverse intriguing properties. However, most of them show dark current relatively low light on/off ratio slow response speed because the large charge carrier concentration bolometric effect, hindering further application low-energy-consuming optoelectronics. Herein, a homotype van heterostructure based on exfoliated n-InSe integrated with chemical vapor deposition (CVD)-grown n-Bi2O2Se nanosheets that type II band alignment was fabricated. The efficient interfacial separation, strong interlayer coupling, effective built-in electric field across heterointerface demonstrated excellent, stable, broadband self-driven photodetection range 400–1064 nm. Specifically, responsivity (R) 75.2 mA·W–1 specific detectivity (D*) 1.08 × 1012 jones were achieved under 405 nm illumination. Additionally, R 13.3 D* 2.06 1011 980 Meanwhile, ultrahigh Ilight/Idark over 105 fast time 5.8/15 ms illumination confirmed excellent photosensitivity behavior. Furthermore, could be enhanced 13.6 791 at drain–source voltage (Vds) 1 V, respectively, originating from lower potential barrier. This study suggested nanosheet/InSe nanoflake heterojunction can offer applications next-generation photodetectors consume energy exhibit performance.

Language: Английский

Citations

25
Black phosphorus: The rise of phosphorene in 2D materials applications DOI Creative Commons
Raghvendra Kumar Mishra, Jayati Sarkar, Iva Chianella

et al.

Next Materials, Journal Year: 2024, Volume and Issue: 4, P. 100217 - 100217

Published: May 3, 2024

Few layers Black phosphorus (BP) and phosphorene are two-dimensional (2D) materials renowned for their adjustable bandgaps, high carrier mobility, anisotropic conductivity, which make them highly promising applications in the visible infrared spectrum. The incorporation of these into polymer matrices has led to significant advancements material science, resulting nanocomposites with enhanced mechanical, electrical, optical properties. This article provides a thorough analysis BP/phosphorene nanocomposites, including synthesis techniques (such as exfoliation methods) manufacturing approaches. Advanced characterisation utilised assess structure, morphology, properties composites. highlights potential energy storage (e.g., high-capacity batteries), flexible electronics bendable displays), environmental sensing, emerging biomedical fields such targeted drug delivery. Furthermore, discusses solutions tackle challenges associated scalable, cost-effective production ambient stability BP/phosphorene, leveraging recent engineering research. conclusion outlines future research directions, emphasising importance addressing persistent through technological breakthroughs exploring avenues further advancement.

Language: Английский

Citations

12
Dominant n-type conduction and fast photoresponse in BP/MoS2 heterostructures DOI Creative Commons
Loredana Viscardi, O. Durante, S. De Stefano

et al.

Surfaces and Interfaces, Journal Year: 2024, Volume and Issue: 49, P. 104445 - 104445

Published: May 6, 2024

In recent years, van der Waals heterojunctions between two-dimensional (2D) materials have garnered significant attention for their unique electronic and optoelectronic properties opened avenues innovative device architectures applications. Among them, the heterojunction formed by black phosphorus (BP) molybdenum disulfide (MoS2) stands out as a promising candidate advanced devices. This study unravels interplay BP, MoS2, Cr contacts to explain electrical behavior of BP/MoS2 showing rectifying with dominant n-type conduction, high ON/OFF current ratio around 104 at ± 20 V. The higher unexpected observed when applying negative bias either MoS2 or BP side is elucidated an energy band model incorporating type II interface forming Schottky contact ohmic BP. shows pronounced photoresponse, linearly dependent on incident laser power, responsivity 100 µA/W under white light 50 µW power. Time-resolved photocurrent measurements reveal relatively fast response characteristic rise times less than 200 ms. work demonstrates that photoresponse characteristics are

Language: Английский

Citations

10
Plasmonically-enhanced reconfigurable photodetector based on graphene/Sb2S3 heterojunction DOI Creative Commons
Xiaojuan Lian, Shiyu Li, Jiyuan Jiang

et al.

Applied Physics Express, Journal Year: 2025, Volume and Issue: 18(1), P. 015003 - 015003

Published: Jan. 1, 2025

Abstract Graphene photodetectors face challenges like weak absorption and narrow spectral range. To overcome these weakness, we proposed a novel photodetector based on Gold (Au)/Graphene/Chalcogenide (Sb 2 S 3 ) hetero-junction, leveraging surface plasmonic phase-transition effects. Simulations show that optimizing Au Sb nanoantenna thicknesses diameters can achieve an efficiency of 0.9 for both amorphous crystalline states, with adjustable wavelength range 200 nm. The device demonstrates superior performance, including responsivity 125 A W −1 , quantum 1.36 × 10 4 %, detectivity 2.25 9 Jones, offering pathway to next-generation optoelectronic chips.

Language: Английский

Citations

1
Pressure-Dependent Current Transport in vertical BP/MoS2 heterostructures DOI Creative Commons
O. Durante, S. De Stefano,

Adolfo Mazzotti

et al.

Heliyon, Journal Year: 2025, Volume and Issue: 11(3), P. e42443 - e42443

Published: Feb. 1, 2025

Highlights•Pressure-dependence electrical properties of vertical BP/MoS2 heterostructures.•Gate-tunable rectification (ratio 103) with thermionic and tunneling mechanisms•n-type conduction, ON/OFF ratio 106, mobility 1.6 cm2 V-1 s-1•Promising for low-power electronics, high-performance transistors, sensorsAbstractVan der Waals heterostructures between two-dimensional (2D) materials offer versatile platforms innovative device architectures applications. Black phosphorus (BP) molybdenum disulfide (MoS2) emerge as promising candidates heterostructures, owing to their exceptional electronic gate-tunable capabilities. In this work, we study the a heterostructure fabricated onto SiO2/Si substrate in back-gate configuration. We focus on effect air pressure, from atmospheric pressure 10-4 mbar, show that best performances are enabled at lower pressure. The exhibits rectifying current-voltage characteristics, close 103. characteristics present kink forward region revealing different conduction mechanisms, namely drift-diffusion band-to-band tunnelling. Furthermore, when used transistor, shows n-type high gate modulation of, low off-state current s-1. results work highlight potential applications sensitive sensors.Graphical abstract

Language: Английский

Citations

1
Unleashing the potential of tungsten disulfide: Current trends in biosensing and nanomedicine applications DOI Creative Commons
Mohamed Bahri, Dongmei Yu, Can Yang Zhang

et al.

Heliyon, Journal Year: 2024, Volume and Issue: 10(2), P. e24427 - e24427

Published: Jan. 1, 2024

The discovery of graphene ignites a great deal interest in the research and advancement two-dimensional (2D) layered materials. Within it, semiconducting transition metal dichalcogenides (TMDCs) are highly regarded due to their exceptional electrical optoelectronic properties. Tungsten disulfide (WS

Language: Английский

Citations

8
A Superior Two-Dimensional Phosphorus Flame Retardant: Few-Layer Black Phosphorus DOI Creative Commons
Taiming Zhang, Huanyu Xie, Shuai Xie

et al.

Molecules, Journal Year: 2023, Volume and Issue: 28(13), P. 5062 - 5062

Published: June 28, 2023

The usage of flame retardants in flammable polymers has been an effective way to protect both lives and material goods from accidental fires. Phosphorus have the potential be follow-on after halogenated variants, because their low toxicity, high efficiency compatibility. Recently, emerging allotrope phosphorus, two-dimensional black as a retardant developed. To further understand its performance flame-retardant among phosphorus retardants, this work, we built model materials compare performances few-layer red nanoparticles, triphenyl phosphate additives cellulose polyacrylonitrile. Aside superior retardancy polyacrylonitrile, showed self-extinguishing, ~1.8 ~4.4 times that nanoparticles with similar lateral size mass load (2.5~4.8 wt%), respectively. char layer coated combustion was more continuous smoother than blank, amount residues thermogravimetric analysis were 10 wt%, 14 wt% In addition, although exothermic reactions, enthalpy changes (−127.1 kJ mol−1) are one third (−381.3 mol−1). Based on joint thermodynamic, spectroscopic, microscopic analysis, attributed reaction suppression structure thermal nature phosphorus.

Language: Английский

Citations

14