Frequency-dependent capacitance and conductance characteristics and current transport mechanisms of Schottky diodes with TPA-IFA organic interfacial layer
Physica Scripta,
Journal Year:
2024,
Volume and Issue:
99(9), P. 095986 - 095986
Published: Aug. 9, 2024
Abstract
In
this
study,
a
Schottky
barrier
diode
with
an
Al/TPA-IFA/p-Si
structure
was
fabricated
using
spin
coating
and
thermal
evaporation
methods.
Using
forward
reverse
bias
I
–
V
measurement,
we
examined
the
key
electrical
characteristics
of
diode,
including
Φ
b
,
n
R
s
N
mathvariant="italic">ss
;
also
estimated
D
A
E
F
∆
W
C
measurements
under
different
frequencies
(10,
50,
100,
500
kHz,
1
MHz)
at
room
temperature.
data
Thermionic
Emission
(TE)
theory,
basic
parameters
such
as
ideality
factor
(
),
height
)
values
were
computed
3.01
0.716
eV.
The
fundamental
are
highly
frequency-dependent.
It
found
that
series
Resistance
reduced
increasing
frequency,
but
width
depletion
layer
increased.
when
frequency
increased,
capacitance
for
our
new
Schottky-type
diode.
diode’s
potential
conduction
mechanisms
through
utilization
ln
−
0.5
graphs.
transport
properties
primarily
governed
by
ohmic
conduction,
Space
Charge
Limited
Current
(SCLC),
Trap
(TCLC)
low,
moderate,
high
voltages,
respectively.
concluded
Poole–Frenkel
(PFE)
mechanism
dominant
Ultimately,
findings
confirmed
TPA-IFA-based
could
be
obtained
electronic
application.
Language: Английский
The Frequency-Dependent Interface Trap States and Diode Parameter Properties of Au/N-Si Schottky Diode with Bod-Z-En Interfacial Layer at Dark and Under Illumination
Ali Osman Tezcan,
No information about this author
Asrın Baran Çavdar,
No information about this author
Serkan Eymür
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et al.
Published: Jan. 1, 2025
Language: Английский
Flexible tetra-carboxyphenyl porphyrin thin films for optoelectronic devices: Structural, optical and electrical characteristics
Fatma Gami,
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M.A. Sebak,
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M.A.A. Alzara
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et al.
Optical Materials,
Journal Year:
2025,
Volume and Issue:
unknown, P. 116976 - 116976
Published: March 1, 2025
Language: Английский
Frequency-dependent interface states and diode parameters of Au/n-Si Schottky diode with BOD-Z-EN interfacial layer in dark and under illumination
Ali Osman Tezcan,
No information about this author
Asrın Baran Çavdar,
No information about this author
Serkan Eymür
No information about this author
et al.
Physica B Condensed Matter,
Journal Year:
2025,
Volume and Issue:
unknown, P. 417273 - 417273
Published: April 1, 2025
Language: Английский