Effect of electron scattering of microchannel plates on the resolution and halo size of UV image intensifier DOI Open Access
Miao Jing, Zhiming Wang, Chunfei Li

et al.

Journal of Physics Conference Series, Journal Year: 2024, Volume and Issue: 2880(1), P. 012005 - 012005

Published: Oct. 1, 2024

Abstract Aiming at the problem that current theoretical model for calculating resolution of UV(ultraviolet) low-light level image intensifier is not perfect enough to give optimization conditions directly, effects parameters such as thickness anti-ion feedback film, MCP(microchannel plate) bevel angle, depth rear electrode and length-diameter ratio channel plate on photoelectron transport characteristics UV are analyzed through systematic research. Experimental results show optimizing these can significantly improve performance intensifier. Specifically, when film 4nm, angle 8°, 50, back-end deepened 10μm, quality reaches a better level. This study has guidance significance development high-resolution ultraviolet intensifiers in field optoelectronic imaging, also plays key role improving angular application sun blind warning.

Language: Английский

MXene/AlGaN van der Waals heterojunction self-powered photodetectors for deep ultraviolet communication DOI
Linhao Li,

Yixun He,

Tingjun Lin

et al.

Applied Physics Letters, Journal Year: 2024, Volume and Issue: 124(13)

Published: March 25, 2024

Self-powered deep ultraviolet (DUV) photodetectors (PDs) have attracted considerable attention in environmental, industrial, and military fields because of their power-independent environmentally sensitive photodetection. However, DUV PDs based on traditional thin film structures are limited by the low intrinsic mobility aluminum-gallium nitride (AlGaN) large barrier width heterogeneous structure, which makes it difficult to achieve efficient spontaneous separation, resulting lower responsiveness a slow response speed. Herein, 2D/3D PD MXene, niobium carbide (Nb2CTx)/AlGaN van der Waals heterojunctions (vdWHs) has been proposed. The as-prepared revealed self-powered properties with high responsivity 101.85 mA W−1, as well fast (rise/decay time 21/22 ms) under 254 nm illumination, thanks excellent electrical conductivity tunable work function MXene. It also showed linear dynamic range 70 dB −2 V bias strong absorption MXene/AlGaN vdWH, enhanced carrier illumination density. This study presents an easy processing route fabricate high-performance vdWHs for communication.

Language: Английский

Citations

13
Recent advances in optoelectronic properties and applications of Ti3C2Tx MXene DOI
Subin Mary Zachariah,

R. Indirajith,

M. Rajalakshmi

et al.

Journal of Alloys and Compounds, Journal Year: 2024, Volume and Issue: unknown, P. 178296 - 178296

Published: Dec. 1, 2024

Language: Английский

Citations

4
Artificial optoelectronic synapses based on Ga2O3 metal–semiconductor–metal solar‐blind ultraviolet photodetectors with asymmetric electrodes for neuromorphic computing DOI Creative Commons

Huazhen Sun,

Bingjie Ye,

Mei Ge

et al.

Deleted Journal, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 25, 2025

Abstract Research on optoelectronic synapses that can integrate both detection and processing functions is essential for the development of efficient neuromorphic computing. Here, we experimentally demonstrated an Ga 2 O 3 ‐based metal–semiconductor–metal (MSM) solar‐blind ultraviolet (UV) photodetector (PD) with asymmetric interdigital electrodes. The PD exhibits a responsivity 732 A/W under forward bias 6 V. tunable conductance properties PDs provide novel approach to synaptic performance. proposed as artificial synapse realized several function, including excitatory postsynaptic current, paired‐pulse facilitation, long‐term potentiation, transition from short‐term memory memory, learning experience behaviors successfully. At reverse bias, ultra‐low energy consumption 140 fJ was achieved. In addition, recognition accuracy over 95% in MNIST handwritten number task. These results suggest MSM UV have high potential computing applications.

Language: Английский

Citations

0
MSM Solar-Blind Ultraviolet Detector Incorporating Asymmetric Contact Electrodes Fabricated on AlₓGa₁–ₓN Hetero-Epilayers DOI
Shiting Dai, Biao Gong, Xiao Wang

et al.

IEEE Transactions on Electron Devices, Journal Year: 2024, Volume and Issue: 71(7), P. 4196 - 4202

Published: May 30, 2024

In this work, we investigate the ability of a newly fabricated metal–semiconductor–metal (MSM) solar-blind ultraviolet (UV) photodetector (PD). Three Al $_{\textit{X}}$ Ga notation="LaTeX">$_{\text{1}-\textit{X}}$ N films with different content were used to form heterostructures, and metal stacks deposited on their two sides achieve asymmetric contact electrodes. The device exhibited dark current 2.53 notation="LaTeX">$\times$ 10 notation="LaTeX">$^{-\text{8}}$ A peak responsivity 2.86 at notation="LaTeX">$-$ 9 V, while corresponding V are 4.90 notation="LaTeX">$^{-\text{7}}$ 20.19 A/W, respectively. Furthermore, its response speed was faster under reverse bias than forward bias. Two-dimensional simulations obtain bias-dependent energy bands, electric fields, carrier concentrations explain discrepancy detection performances between polarities.

Language: Английский

Citations

2
Localized surface plasmon resonance enhanced deep ultraviolet photodetectors based on Pd@Nb2CTx/AlGaN van der Waals heterojunctions DOI

Yixun He,

Linhao Li, Jinrong Chen

et al.

Applied Physics Letters, Journal Year: 2024, Volume and Issue: 125(12)

Published: Sept. 16, 2024

Localized surface plasmon resonance (LSPR) has been proven as an effective means to improve the performance of optoelectronic devices from infrared ultraviolet region. However, due lack suitable materials in deep (DUV) region, studies this field were relatively rare. Herein, a simple solution reduction method was proposed decorate palladium nanoparticles (Pd NPs) onto two-dimensional (2D) niobium carbide Nb2CTx (MXene) nanosheets fabricate Pd@Nb2CTx/aluminum-gallium nitride (AlGaN) van der Waals heterojunction (vdWH) DUV photodetectors (PDs). Thanks coupling between Pd@Nb2CTx and AlGaN, obvious enhanced optical absorption carrier excitation as-fabricated PDs have observed with peak responsivity 0.86 A/W, well fast response (rise/decay time 37.8/14.5 ms) under −3 V bias 254 nm illumination. This study provides direct evidence for LSPR Pd NPs which will develop optional pathway structure design PDs.

Language: Английский

Citations

1
Study of the Preparation and Performance of Mg-Doped Si/Al2O3/ZnO Nanowall Heterojunction UV Detector DOI
Xiaoyang Wang,

Shiheng Xin,

Baowen Tao

et al.

ACS Applied Nano Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Sept. 12, 2024

Language: Английский

Citations

0
Effect of electron scattering of microchannel plates on the resolution and halo size of UV image intensifier DOI Open Access
Miao Jing, Zhiming Wang, Chunfei Li

et al.

Journal of Physics Conference Series, Journal Year: 2024, Volume and Issue: 2880(1), P. 012005 - 012005

Published: Oct. 1, 2024

Abstract Aiming at the problem that current theoretical model for calculating resolution of UV(ultraviolet) low-light level image intensifier is not perfect enough to give optimization conditions directly, effects parameters such as thickness anti-ion feedback film, MCP(microchannel plate) bevel angle, depth rear electrode and length-diameter ratio channel plate on photoelectron transport characteristics UV are analyzed through systematic research. Experimental results show optimizing these can significantly improve performance intensifier. Specifically, when film 4nm, angle 8°, 50, back-end deepened 10μm, quality reaches a better level. This study has guidance significance development high-resolution ultraviolet intensifiers in field optoelectronic imaging, also plays key role improving angular application sun blind warning.

Language: Английский

Citations

0