Impacts of the Lattice Strain on Light Emission in Layered Perovskite Thin flakes DOI

Zhonglong Zhang,

Runhui Zhou,

Meili Li

et al.

Advanced Optical Materials, Journal Year: 2024, Volume and Issue: 12(33)

Published: Aug. 29, 2024

Abstract Strain engineering, as a non‐chemical tuning knob, can enhance the performance of semiconductor devices. Here, an efficient manipulation light emission is revealed in thin‐layered 2D perovskite strongly correlated to layer numbers [PbI 6 ] 4− octahedron ( n ) and [C H 5 (CH 2 NH 3 ‐1 Pb I +1 N by applying uniaxial strains ɛ via bending flexible substrate. As < > increases from 1 3, redshift −0.97% 0.97%) observed bandgap shrinkage, shrinkage rate 1.97 10.38 meV/%, which attributed predominant intralayer deformation due anisotropy lattice strain. Conversely, 7 48 for = related more prominent small‐ flakes (< ≈ 7, 15.2 meV/%) but easily offset large‐ 48, 7.7 meV/%). This anisotropic deformation, meanwhile, inevitably modulates carrier recombination dynamics , essential development highly photoelectronic

Language: Английский

Design strategies and insights of flexible infrared optoelectronic sensors DOI

Yegang Liang,

Wenhao Ran,

Dan Kuang

et al.

Journal of Semiconductors, Journal Year: 2025, Volume and Issue: 46(1), P. 011602 - 011602

Published: Jan. 1, 2025

Abstract Infrared optoelectronic sensing is the core of many critical applications such as night vision, health and medication, military, space exploration, etc. Further including mechanical flexibility a new dimension enables novel features adaptability conformability, promising for developing next-generation sensory toward reduced size, weight, price, power consumption, enhanced performance (SWaP 3 ). However, in this emerging research frontier, challenges persist simultaneously achieving high infrared response good deformability devices integrated systems. Therefore, we perform comprehensive review design strategies insights flexible sensors, fundamentals photodetectors, selection materials device architectures, fabrication techniques strategies, discussion architectural functional integration towards wearable optoelectronics advanced image sensing. Finally, article offers into future directions to practically realize ultra-high smart sensors enabled by infrared-sensitive materials, covering development micro-/nanofabrication. Benchmarks scaling these across fabrication, performance, are presented, alongside perspectives on potential medication health, biomimetic neuromorphic systems,

Language: Английский

Citations

4
In-depth understanding of the band alignment and interface states scenario in Bi2O2Se/SrTiO3 ultrathin heterojunction DOI
Ke Zhang,

Yusen Feng,

Lei Hao

et al.

Rare Metals, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 21, 2025

Language: Английский

Citations

0
All-fiber anti-jamming capacitive pressure sensors based on liquid metals DOI
Huichen Xu, Yue Liu,

Yepei Mo

et al.

Rare Metals, Journal Year: 2025, Volume and Issue: unknown

Published: March 27, 2025

Language: Английский

Citations

0
High-Robustness, Compact Bi2O2Se-Based NIR Retinal Sensor for Bionic Vision Systems DOI
Zhanfeng Wang, Chang Liu,

Jingchao Xiao

et al.

ACS Photonics, Journal Year: 2025, Volume and Issue: unknown

Published: April 9, 2025

Language: Английский

Citations

0
Photochemical iontronics with multitype ionic signal transmission at single pixel for self-driven color and tridimensional vision DOI Creative Commons
Puguang Peng, Penghui Shen, Qian Han

et al.

Device, Journal Year: 2024, Volume and Issue: unknown, P. 100574 - 100574

Published: Oct. 1, 2024

Language: Английский

Citations

2
Impacts of the Lattice Strain on Light Emission in Layered Perovskite Thin flakes DOI

Zhonglong Zhang,

Runhui Zhou,

Meili Li

et al.

Advanced Optical Materials, Journal Year: 2024, Volume and Issue: 12(33)

Published: Aug. 29, 2024

Abstract Strain engineering, as a non‐chemical tuning knob, can enhance the performance of semiconductor devices. Here, an efficient manipulation light emission is revealed in thin‐layered 2D perovskite strongly correlated to layer numbers [PbI 6 ] 4− octahedron ( n ) and [C H 5 (CH 2 NH 3 ‐1 Pb I +1 N by applying uniaxial strains ɛ via bending flexible substrate. As < > increases from 1 3, redshift −0.97% 0.97%) observed bandgap shrinkage, shrinkage rate 1.97 10.38 meV/%, which attributed predominant intralayer deformation due anisotropy lattice strain. Conversely, 7 48 for = related more prominent small‐ flakes (< ≈ 7, 15.2 meV/%) but easily offset large‐ 48, 7.7 meV/%). This anisotropic deformation, meanwhile, inevitably modulates carrier recombination dynamics , essential development highly photoelectronic

Language: Английский

Citations

0