Reaction Kinetics Regulation Suppressed Carrier Recombination Loss for High‐Efficient Solution‐Based Antimony Selenosulfide Photovoltaic Devices DOI

Boyang Fu,

Jun Xiong,

Tianhua Jv

et al.

Advanced Energy Materials, Journal Year: 2025, Volume and Issue: unknown

Published: May 2, 2025

Abstract Carrier recombination loss within the emerging antimony selenosulfide (Sb 2 (S,Se) 3 ) photovoltaic devices is a critical factor limiting performance. Herein, reaction kinetics regulation strategy reported to simultaneously passivate deep‐level intrinsic defect and inhibit oxide impurities in Sb absorber with help of sodium borohydride (SB). The SB, on one hand due alkaline feature, can significantly promote decomposition selenourea Se formation, eliminating S1 defects reducing V S defects, other hand, owing property, restore SbO + ions 3+ , thus inhibiting O formation improving heterogeneous nucleation preferable [hk1] orientation. These collective influences have remarkably suppressed carrier strengthened collection optimal band alignment. Consequently, high‐efficient an efficiency 10.62% (0.0684 cm are gained, which comparable latest‐recorded value 10.7% (0.0389 ). This work provides feasible method for suppressing Sb‐based chalcogenide materials supplies precious instruction preparing high‐performance optoelectronic devices.

Language: Английский

Solvent Engineering‐Enabled Surface Defect Passivation in Cu2ZnSn(S,Se)4 Solar Cells with Low Open‐Circuit Voltage Losses and Improved Carrier Lifetime DOI Open Access
Umar Farooq,

Boyang Han,

Usman Ali Shah

et al.

ChemSusChem, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 6, 2025

The efficiency of earth-abundant kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells has been lagging behind the Shockley-Queisser limit primarily due to presence deep-level defects. These defects cause critical issues such as short carrier diffusion length, significant band tailing, and a large open-circuit voltage (Voc) deficit, ultimately leading low device efficiency. To address these issues, we propose post-fabrication defect healing strategy by dip-coating CZTSSe film in dimethylformamide (DMF) solvent. Immersing absorber layer DMF (a polar solvent), neutralizes CuSn antisite through chemical bonding facilitates formation dense, smooth with larger grain size. Deep-level transient spectroscopy revealed remarkable increase length from 93 nm (control device) 142 (champion device), confirming beneficial effect solvent-assisted post-treatment on mitigating reduction densities led decrease Voc deficit up 289 mV, accompanied an increased champion 11.4 %. This work highlights huge potential for cells.

Language: Английский

Citations

0
Surface cooling for optimized elemental distribution and improved kesterite solar cells DOI

Shanheng Zhao,

Lijie Zhao, Shihui Yu

et al.

Journal of Materials Chemistry C, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 1, 2025

A surface cooling strategy was adopted, which suppresses Sn loss and facilitates Se diffusion during the selenization process, thereby optimizing metal element distribution photovoltaic performance of CZTSSe absorbers.

Language: Английский

Citations

0
Rate-dependent mechanical behavior of dual-phase structure of Sn interconnect materials DOI Creative Commons
Xin Zhang,

Hongbo Lu,

Xiaobin Luo

et al.

Journal of Materials Science Materials in Electronics, Journal Year: 2025, Volume and Issue: 36(10)

Published: April 1, 2025

Language: Английский

Citations

0
Reaction Kinetics Regulation Suppressed Carrier Recombination Loss for High‐Efficient Solution‐Based Antimony Selenosulfide Photovoltaic Devices DOI

Boyang Fu,

Jun Xiong,

Tianhua Jv

et al.

Advanced Energy Materials, Journal Year: 2025, Volume and Issue: unknown

Published: May 2, 2025

Abstract Carrier recombination loss within the emerging antimony selenosulfide (Sb 2 (S,Se) 3 ) photovoltaic devices is a critical factor limiting performance. Herein, reaction kinetics regulation strategy reported to simultaneously passivate deep‐level intrinsic defect and inhibit oxide impurities in Sb absorber with help of sodium borohydride (SB). The SB, on one hand due alkaline feature, can significantly promote decomposition selenourea Se formation, eliminating S1 defects reducing V S defects, other hand, owing property, restore SbO + ions 3+ , thus inhibiting O formation improving heterogeneous nucleation preferable [hk1] orientation. These collective influences have remarkably suppressed carrier strengthened collection optimal band alignment. Consequently, high‐efficient an efficiency 10.62% (0.0684 cm are gained, which comparable latest‐recorded value 10.7% (0.0389 ). This work provides feasible method for suppressing Sb‐based chalcogenide materials supplies precious instruction preparing high‐performance optoelectronic devices.

Language: Английский

Citations

0