Adjustable ion energy barrier for reliable memristive neuromorphic systems DOI

Tianci Huang,

Zuqing Yuan

Science China Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Sept. 3, 2024

Language: Английский

In-depth physical mechanism analysis of negative differential resistance effect for the voltage controlled Cu2S-based memristor DOI
Yulong Yang, Bai Sun,

Shuangsuo Mao

et al.

Materials Today Communications, Journal Year: 2025, Volume and Issue: 44, P. 111941 - 111941

Published: Feb. 17, 2025

Language: Английский

Citations

0

Two-dimensional halide perovskite memristor arrays: linearly programmable for neuromorphic computing DOI

Hudie Wei,

Liang Chu

Science China Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 14, 2025

Language: Английский

Citations

0

Harnessing Earth‐Abundant Lead‐Free Halide Perovskite for Resistive Switching Memory and Neuromorphic Computing DOI Creative Commons

Zijian Feng,

Jiyun Kim, Jie Min

et al.

Advanced Electronic Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 25, 2025

Abstract Non‐volatile memories are expected to revolutionize a wide range of information technologies, but their manufacturing cost is one the top concerns researchers must address. This study presents 1D lead‐free halide perovskite K 2 CuBr 3 , as novel material candidate for resistive switching (RS) devices, which features only earth‐abundant elements, K, Cu, and Br. To knowledge, this first low‐dimensional with exceptionally low production costs minimal environmental impact. Owing unique carrier transport along Cu─Br networks, RS device exhibits excellent bipolar behavior, an On/Off window 10 5 retention time over 1000 s. The devices can also act artificial synapses transmit various forms synaptic plasticities, integration into perceptron neural network deliver high algorithm accuracy 93% image recognition. Overall, underscores promising attributes future development memory storage neuromorphic computing, leveraging its distinct properties economic benefits.

Language: Английский

Citations

0

Isopropanol-induced reconstruction of perovskite surface for enhanced photovoltaic performance DOI
Liang Chu,

Hudie Wei,

Nanjing Liu

et al.

Journal of Alloys and Compounds, Journal Year: 2025, Volume and Issue: unknown, P. 179814 - 179814

Published: March 1, 2025

Language: Английский

Citations

0

Recent Progress on Heterojunction‐Based Memristors and Artificial Synapses for Low‐Power Neural Morphological Computing DOI Open Access

Zhi‐Xiang Yin,

Hao Chen, Shuo Yin

et al.

Small, Journal Year: 2025, Volume and Issue: unknown

Published: March 19, 2025

Abstract Memristors and artificial synapses have attracted tremendous attention due to their promising potential for application in the field of neural morphological computing, but at same time, continuous optimization improvement energy consumption are also highly desirable. In recent years, it has been demonstrated that heterojunction is great significance improving memristors synapses. By optimizing material composition, interface characteristics, device structure heterojunctions, can be reduced, performance stability durability improved, providing strong support achieving low‐power computing systems. Herein, we review progress on heterojunction‐based by summarizing working mechanisms advances memristors, terms selection, design, fabrication techniques, strategies, etc. Then, applications neuromorphological deep learning introduced discussed. After that, remaining bottlenecks restricting development discussed detail. Finally, corresponding strategies overcome challenges proposed. We believe this may shed light high‐performance synapse devices.

Language: Английский

Citations

0

Integration of Perovskite/Low‐Dimensional Material Heterostructures for Optoelectronics and Artificial Visual Systems DOI Creative Commons
Yingge Du, Junjie Yang, Ziyu Lv

et al.

Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown

Published: April 14, 2025

Abstract Heterojunctions combining halide perovskites with low‐dimensional materials are revolutionizing optoelectronic device design by leveraging complementary properties. Halide perovskites, known for their tunable bandgaps, excellent light‐harvesting, and efficient charge carrier mobility, provide a robust foundation photodetectors (PDs) imaging sensors. Low‐dimensional contribute ultrafast enhanced light‐matter interactions, mechanical flexibility. When integrated into heterostructures, these enable precise control over dynamics, leading to significant improvements in efficiency, stability, response speed. This synergy addresses critical challenges optoelectronics, advancing flexible electronics, wearable sensors, high‐sensitivity systems. Ongoing advancements interface engineering material synthesis continually enhancing the reliability operational efficacy of devices across various environmental conditions. Additionally, heterostructures show substantial promise neuromorphic computing, where properties support energy‐efficient, event‐driven data processing. By mimicking adaptive hierarchical nature biological visual systems, they offer new possibilities real‐time image analysis intelligent decision‐making. review highlights latest developments perovskite‐based heterojunctions transformative role bridging gap between artificial vision, driving technologies such as robotics bio‐inspired

Language: Английский

Citations

0

A leap forward in compute-in-memory system for neural network inference DOI
Liang Chu, Wenjun Li

Journal of Semiconductors, Journal Year: 2025, Volume and Issue: 46(4), P. 040401 - 040401

Published: April 1, 2025

Language: Английский

Citations

0

Adjustable ion energy barrier for reliable memristive neuromorphic systems DOI

Tianci Huang,

Zuqing Yuan

Science China Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Sept. 3, 2024

Language: Английский

Citations

0