Alternating Bias Assisted Annealing of Amorphous Oxide Tunnel Junctions DOI Creative Commons
David P. Pappas, Mark Field, Cameron Kopas

et al.

arXiv (Cornell University), Journal Year: 2024, Volume and Issue: unknown

Published: Jan. 1, 2024

We demonstrate a transformational technique for controllably tuning the electrical properties of fabricated thermally oxidized amorphous aluminum-oxide tunnel junctions. Using conventional test equipment to apply an alternating bias heated barrier, giant increases in room temperature resistance, greater than 70%, can be achieved. The rate resistance change is shown strongly temperature-dependent, and independent junction size sub-micron regime. In order measure their tunneling at mK temperatures, we characterized transmon qubit junctions treated with this alternating-bias assisted annealing (ABAA) technique. measured frequencies follow Ambegaokar-Baratoff relation between shifted critical current. Further, these studies show reduction junction-contributed loss on $\approx 2 \times10^{-6}$, along significant resonant- off-resonant-two level system defects when compared untreated samples. Imaging high-resolution TEM shows that barrier still predominantly more uniform distribution aluminum coordination across relative This new approach expected widely applicable broad range devices rely oxide, as well many other metal-insulator-metal structures used modern electronics.

Language: Английский

Alternating Bias Assisted Annealing of Amorphous Oxide Tunnel Junctions DOI Creative Commons
David P. Pappas, Mark Field, Cameron Kopas

et al.

arXiv (Cornell University), Journal Year: 2024, Volume and Issue: unknown

Published: Jan. 1, 2024

We demonstrate a transformational technique for controllably tuning the electrical properties of fabricated thermally oxidized amorphous aluminum-oxide tunnel junctions. Using conventional test equipment to apply an alternating bias heated barrier, giant increases in room temperature resistance, greater than 70%, can be achieved. The rate resistance change is shown strongly temperature-dependent, and independent junction size sub-micron regime. In order measure their tunneling at mK temperatures, we characterized transmon qubit junctions treated with this alternating-bias assisted annealing (ABAA) technique. measured frequencies follow Ambegaokar-Baratoff relation between shifted critical current. Further, these studies show reduction junction-contributed loss on $\approx 2 \times10^{-6}$, along significant resonant- off-resonant-two level system defects when compared untreated samples. Imaging high-resolution TEM shows that barrier still predominantly more uniform distribution aluminum coordination across relative This new approach expected widely applicable broad range devices rely oxide, as well many other metal-insulator-metal structures used modern electronics.

Language: Английский

Citations

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