Potential for multi-application advancements from doping zirconium (Zr) for improved optical, electrical, and resistive memory properties of zinc oxide (ZnO) thin films DOI
Amit Kumar Chawla,

Navjot Hothi,

Akula Umamaheswara Rao

et al.

Physica Scripta, Journal Year: 2024, Volume and Issue: 99(9), P. 095935 - 095935

Published: July 31, 2024

Abstract Transition metal-doped Zinc oxide (ZnO) thin films with an optimal wide band gap and semiconducting nature find numerous applications in optoelectronic devices, gas sensors, spintronic electronics. In this study, Zirconium (Zr) doped ZnO were deposited on ITO (Indium Tin oxide) coated glass substrate using RF-magnetron sputtering. Optical electrical properties examined for their potential use resistive random-access memory (RRAM) applications. X-ray Diffraction (XRD), UV–vis spectroscopy, x-ray photoelectron spectroscopy (XPS), Atomic force microscopy (AFM) Scanning electron (SEM) used to investigate structural, optical, compositional roughness respectively. The results demonstrate that the possess crystalline properties. Additionally, augmentation Zr concentration correlates elevation optical gap, ascending from 3.226 eV 3.26 eV, accompanied by increase Urbach energy 0.0826 0.1234 eV. film highest content among all demonstrated best performance Incorporating as a dopant shows enhancement such optimum concertation of can potentially be RRAM. being versatile host material, its doping may extend catalysis, sensing, storage, biomedical engineering. employ zirconium dopant, which is novel way improve material’s characteristics. Although has been thoroughly researched, adding presents technique enhance electrical, characteristics at once not fully investigated.

Language: Английский

Nonlinear and linear conductance modulation and synaptic plasticity in stable tin-zinc oxide based-memristor for neuro-inspired computing DOI
Rajwali Khan, Shahid Iqbal,

Fazal Raziq

et al.

Materials Science in Semiconductor Processing, Journal Year: 2024, Volume and Issue: 186, P. 109111 - 109111

Published: Nov. 15, 2024

Language: Английский

Citations

6
Temperature dependent charge transport and conduction mechanism through different electroactive regions in NiO-ZnO heterostructure nanocomposite by using impedance spectroscopy DOI
Muhammad Rafi,

Bakar Bin Khatab Abbasi,

Sadaf Ahmad

et al.

Ceramics International, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 1, 2025

Language: Английский

Citations

0
Photo-electric regulation on resistive switching characteristics of HfOx-based memories DOI
Tingting Guo, Yanan Wang, Yan Zhang

et al.

Applied Surface Science, Journal Year: 2025, Volume and Issue: unknown, P. 163375 - 163375

Published: April 1, 2025

Language: Английский

Citations

0
Synergistic enhancement of memristive behavior and self-rectifying effect in MnO2 based memristor by ions doping method DOI
Bo Yang, Zelin Cao, Bai Sun

et al.

Applied Materials Today, Journal Year: 2025, Volume and Issue: 44, P. 102771 - 102771

Published: May 10, 2025

Language: Английский

Citations

0
Rietveld refined structural, optical and temperature dependent impedance spectroscopy of NiO-ZnO heterostructure composite: Synthesized through solid state method for high-frequency devices DOI
Muhammad Rafi, Ujala Anwar,

M. Hisham Alnasir

et al.

Ceramics International, Journal Year: 2024, Volume and Issue: 50(20), P. 38600 - 38609

Published: July 17, 2024

Language: Английский

Citations

1
Transition Metal Oxide Based Resistive Random-Access Memory: An Overview of Materials and Device Performance Enhancement Techniques DOI Creative Commons
Disha Yadav, Amit Krishna Dwivedi, Shammi Verma

et al.

Journal of Science Advanced Materials and Devices, Journal Year: 2024, Volume and Issue: unknown, P. 100813 - 100813

Published: Nov. 1, 2024

Language: Английский

Citations

1
Conversion between digital and analog resistive switching behaviors and logic display application of photoresponsive ZnO nanorods-based memristor DOI

Zhaowei Rao,

Bai Sun, Guangdong Zhou

et al.

Materials Today Communications, Journal Year: 2024, Volume and Issue: 39, P. 109159 - 109159

Published: May 7, 2024

Language: Английский

Citations

1
Oxygen vacancy-controlled forming-free bipolar resistive switching in Er-doped ZnO memristor DOI Creative Commons
Akendra Singh Chabungbam, Dong‐Eun Kim, Yue Wang

et al.

Applied Surface Science Advances, Journal Year: 2024, Volume and Issue: 25, P. 100675 - 100675

Published: Dec. 13, 2024

Language: Английский

Citations

1
Room-Temperature Deposited Zno-Metal Composite Thin Film for Enhanced Memristive Performance DOI
Guoliang Wang,

Qingcheng Zou,

Yuan Fang

et al.

Published: Jan. 1, 2024

Memristor devices obtain non-linear resistance characteristics and self-memory function, which could be used to simulate the function of biological neuron synapses realize construction artificial neural networks. Here, enhanced memristive performance has been achieved in room-temperature deposited ZnO-Au based memristor through incorporation Au nanoparticles at an appropriate density. Specifically, a switching ratio more than three orders magnitude obtained (low-density, LD) device, along with stable over 5*103 cycles retention lasting 104 seconds. Furthermore, synaptic functions (LD) device have simulated explore its potential for intelligence applications, such as long-term potentiation (LTP) Paired-pulse facilitation (PPF), demonstrate promising capabilities advanced cognitive computing tasks. The low temperature fabricated provides great integration into CMOS compatible electronic system, paving way development next-generation technologies.

Language: Английский

Citations

0
Potential for multi-application advancements from doping zirconium (Zr) for improved optical, electrical, and resistive memory properties of zinc oxide (ZnO) thin films DOI
Amit Kumar Chawla,

Navjot Hothi,

Akula Umamaheswara Rao

et al.

Physica Scripta, Journal Year: 2024, Volume and Issue: 99(9), P. 095935 - 095935

Published: July 31, 2024

Abstract Transition metal-doped Zinc oxide (ZnO) thin films with an optimal wide band gap and semiconducting nature find numerous applications in optoelectronic devices, gas sensors, spintronic electronics. In this study, Zirconium (Zr) doped ZnO were deposited on ITO (Indium Tin oxide) coated glass substrate using RF-magnetron sputtering. Optical electrical properties examined for their potential use resistive random-access memory (RRAM) applications. X-ray Diffraction (XRD), UV–vis spectroscopy, x-ray photoelectron spectroscopy (XPS), Atomic force microscopy (AFM) Scanning electron (SEM) used to investigate structural, optical, compositional roughness respectively. The results demonstrate that the possess crystalline properties. Additionally, augmentation Zr concentration correlates elevation optical gap, ascending from 3.226 eV 3.26 eV, accompanied by increase Urbach energy 0.0826 0.1234 eV. film highest content among all demonstrated best performance Incorporating as a dopant shows enhancement such optimum concertation of can potentially be RRAM. being versatile host material, its doping may extend catalysis, sensing, storage, biomedical engineering. employ zirconium dopant, which is novel way improve material’s characteristics. Although has been thoroughly researched, adding presents technique enhance electrical, characteristics at once not fully investigated.

Language: Английский

Citations

0