Chemical Engineering Journal, Journal Year: 2024, Volume and Issue: unknown, P. 158769 - 158769
Published: Dec. 1, 2024
Language: Английский
Chemical Engineering Journal, Journal Year: 2024, Volume and Issue: unknown, P. 158769 - 158769
Published: Dec. 1, 2024
Language: Английский
Journal of Alloys and Compounds, Journal Year: 2024, Volume and Issue: 1004, P. 175903 - 175903
Published: Aug. 6, 2024
Language: Английский
Citations
5ACS Applied Materials & Interfaces, Journal Year: 2024, Volume and Issue: 16(26), P. 33819 - 33828
Published: June 17, 2024
Broadband photodetectors have attracted much attention due to their multispectral response properties and show great potential in the fields of optical sensing, imaging, communications. Palladium telluride (PdTe2) is highly competitive broadband detection its tunable bandgap nonlinear properties. However, low speed hinders further improvement performance PdTe2-based photodetectors. In this work, we present island-type ZnO@PdTe2 composites on Si as a heterojunction photodetector exhibiting sensitive photodetection capabilities wide band from solar-blind region (254 nm) short-infrared (1.55 μm). Due morphology effectively enhancing light absorption ZnO@PdTe2/Si stacks forming type-II accelerating carrier separation, devices an ultrafast (1.58/1.34 μs), detectivity up 1.56 × 1013 Jones, sensitivity 107 cm2/W. A triple-channel color imaging system dual-channel data transmission were developed based excellent stable device. This study demonstrates vertical for high-speed, wide-band, multiscenario communication.
Language: Английский
Citations
4Advanced Optical Materials, Journal Year: 2024, Volume and Issue: unknown
Published: Oct. 3, 2024
Abstract High‐resolution infrared (IR) imaging technology holds substantial significance across diverse fields including biomedical imaging, environmental surveillance, and IR digital cameras. Current detectors used in commercial applications are based on ultra‐high vacuum‐processed traditional inorganic semiconductors like silicon or III‐V compounds (e.g., Si, Ge, InGaAs). However, the rapid advancements such as autonomous vehicles, virtual reality, point‐of‐care healthcare driving an escalating need for innovative technologies. This review aims to bridge gap by exploring solution‐processed semiconductor photodetectors (PDs), which offer distinct advantages cost‐effectiveness, tunable spectral response, potential multiple‐exciton generation. These characteristics make them particularly suitable optical communication, biological monitoring applications. provides comprehensive insights into research trends pertaining imagers colloidal quantum dots, perovskites, organic compounds, 2D materials. The commences with current market worth of image sensors, fundamental principles single‐pixel multipixel array imagers, key parameters assess detector performance. In essence, concludes a summary recent future prospects next‐generation PD devices their application imager.
Language: Английский
Citations
4Chemical Engineering Journal, Journal Year: 2025, Volume and Issue: unknown, P. 159658 - 159658
Published: Jan. 1, 2025
Language: Английский
Citations
0Advanced Materials Technologies, Journal Year: 2025, Volume and Issue: unknown
Published: March 11, 2025
Abstract Achieving high detectivity in photomultiplication‐type organic photodetectors (PM‐type OPDs) at low bias voltages is crucial for applications imaging, biomedical monitoring, and other fields. In addition to the conventional one‐step deposition method, two‐step (TSD) method has emerged as a promising technique fabricating active layers solar cells photodetectors. this study, balance between EQE dark current PM‐type OPDs optimized by refining processing methods, resulting remarkable of 9.32 × 10 13 Jones. The formation pure donor acceptor phases near electrodes TSD devices significantly reduces current. Thermal admittance spectroscopy impedance reveal an increase activation energy trap states reduction density, contributing improved performance. Additionally, ultrafast response speed achieved with fall time only 356.2 µs. Morphological analysis suggests transition molecular stacking from edge‐on face‐on orientation, which highly beneficial enhancing device's speed. This work highlights potential valuable approach achieving high‐performance OPDs.
Language: Английский
Citations
0Materials Today Chemistry, Journal Year: 2025, Volume and Issue: 46, P. 102718 - 102718
Published: April 22, 2025
Language: Английский
Citations
0Solar Energy, Journal Year: 2024, Volume and Issue: 279, P. 112837 - 112837
Published: Aug. 6, 2024
Language: Английский
Citations
3Journal of Materials Chemistry A, Journal Year: 2024, Volume and Issue: 12(13), P. 7765 - 7776
Published: Jan. 1, 2024
The coherent arrangement of NPDI is successfully processed using molecule interaction to produce a uniform surface. This process leads effective trap density suppression resulting in high performance and clean signals from optoelectronics.
Language: Английский
Citations
1Advanced Functional Materials, Journal Year: 2024, Volume and Issue: unknown
Published: June 23, 2024
Abstract Ultraviolet (UV), visible, and near‐infrared (NIR) broadband organic photodetectors are fabricated by sequential solution‐based thin film coatings of a polymer electron blocking layer (EBL) photoactive layer. To avoid damage to preceding EBL during subsequent coating due lack solvent orthogonality, 2‐(((4‐azido‐2,3,5,6‐tetrafluorobenzoyl)oxy)methyl)−2‐ethylpropane‐1,3‐diyl bis(4‐azido‐2,3,5,6‐tetrafluorobenzoate) (FPA‐3F) is used as novel cross‐linking agent activated UV irradiation with wavelength 254 nm. Solution‐processed poly[N,N′‐bis(4‐butylphenyl)‐N,N′‐bis(phenyl)‐benzidine] (poly‐TPD) films, which cross‐linked FPA‐3F photocrosslinker, for EBL. A ternary blend composed PTB7‐Th, COi8DFIC, PC 71 BM NIR‐sensitive strong photosensitivity in multispectral (UV–visible–NIR) wavelengths 300–1,050 Poly‐TPD films successfully even very small amount 1 wt% FPA‐3F. Small amounts have little detrimental effect on the electrical optoelectronic properties poly‐TPD Finally, NIR addition (1 wt%) show detectivity values higher than × 10 12 Jones entire UV–visible–NIR from 300 nm 1050 nm, maximum 1.41 13 8.90 at 900 1000 respectively.
Language: Английский
Citations
1Advanced Science, Journal Year: 2023, Volume and Issue: 11(7)
Published: Dec. 8, 2023
Abstract In this study, it is demonstrated that CsPbBr 3 perovskite nanocrystals (NCs) can enhance the overall performances of photomultiplication‐type organic photodiodes (PM‐OPDs). The proposed approach enables ionic‐polarizable NCs to be evenly distributed throughout depletion region Schottky junction interface, allowing entire trapped electrons within stabilized, in contrast previously reported interface‐limited strategies. optimized ‐NC‐embedded poly(3‐hexylthiophene‐diyl)‐based PM‐OPDs exhibit exceptionally high external quantum efficiency, specific detectivity, and gain–bandwidth product 2,840,000%, 3.97 × 10 15 Jones, 2.14 7 Hz, respectively. 2D grazing‐incidence X–ray diffraction analyses drift–diffusion simulations combined with temperature‐dependent J–V characteristic are conducted investigate physics behind success PM‐OPDs. results show electrostatic interactions generated by ionic polarization effectively stabilize volume photoactive layer, thereby successfully increasing effective energy depth trap states efficient PM mechanisms. This study demonstrates how a hybrid‐photoactive‐layer further PM‐OPD when functionality inorganic inclusions meets requirements target device.
Language: Английский
Citations
3