Abstract
Long‐wavelength
near‐infrared
(NIR)
phosphors
(1000–2000
nm)
have
shown
great
promise
in
intelligent
NIR
spectroscopy
technology
fields.
However,
developing
capable
of
directly
absorbing
blue
light
and
emitting
over
1000
nm
still
remains
a
significant
challenge.
Here,
series
ultra‐broadband
with
emission
peaks
longer
than
1500
is
achieved
by
incorporating
single
activator
Ni
2+
ion
into
ALaMgMO
6
(A
=
Ca,
Sr,
Ba;
M
Sb,
Nb,
Ta)
double
perovskite
hosts.
Significantly,
through
composition
modulation
strategy,
the
designed
exhibit
an
intense
absorption
band
centered
at
440
nm,
making
these
mono‐doped
pumped
commercial
LED
chips
without
strictly
introducing
sensitized
ions
or
energy
transfer
process.
The
origination
effective
blue‐light
excitable
NIR‐II
to
NIR‐III
phosphor
unraveled
Rietveld
structural
refinement
local
symmetry
analysis.
Additionally,
developed
demonstrated
potential
spectroscopic
analysis,
night‐vision
technology,
non‐destructive
visualization,
information
encryption
identification.
This
work
provides
feasible
strategy
solve
problem
that
‐doped
cannot
be
can
promote
development
more
long‐wavelength
materials
for
multiple
photonic
applications.
Inorganic Chemistry,
Journal Year:
2024,
Volume and Issue:
63(14), P. 6555 - 6563
Published: March 26, 2024
Near-infrared
(NIR)
phosphor
conversion
light-emitting
diodes
(pc-LEDs)
have
great
application
potential
as
NIR
light
sources
in
many
fields
such
food
analysis,
night
vision
illumination,
and
bioimaging
for
noninvasive
medical
diagnosis.
In
general,
phosphors
synthesized
by
a
high-temperature
solid-phase
method
large
particle
sizes
to
be
processed
fine
powders
grinding
process,
which
may
introduce
surface
defects
lower
the
luminous
efficiency.
Here,
we
report
sol–gel
sintering
with
ammonium
nitrate
citric
acid
sacrificing
agents
synthesize
high
purity,
nanosized
(less
than
50
nm)
Zr4+/Ni2+
codoped
MgAl2O4
spinel
phosphors,
is
matrix,
Ni2+
center,
Zr4+
acts
charge
compensator.
We
systematically
characterized
crystal
structures
luminescence
properties
of
Ni2+-doped
MgAl2O4.
Under
390
nm
excitation,
emission
spectrum
covers
900–1600
nm,
half-peak
width
251
peak
position
located
at
1230
nm.
demonstrated
that
incorporating
small
amounts
compensator,
intensity
was
doubled
over
phosphor.
The
optimal
content
compensator
2
mol
%.
More
importantly,
inclusion
led
improved
thermal
stability
properties,
measured
100
°C
33.83%
room
temperature
(20
°C).
This
study
demonstrates
nanomaterials
high-purity
enhanced
optical
can
designed
through
compensation
strategy
method.
Dalton Transactions,
Journal Year:
2024,
Volume and Issue:
53(9), P. 4214 - 4221
Published: Jan. 1, 2024
Cr
3+
and
Ni
2+
codoped
Mg
0.5
Zn
Ga
2
O
4
SWIR
phosphor
exhibits
a
broadband
emission
centered
at
1304
nm
with
FWHM
of
250
nm,
achieving
near-unity
internal
quantum
efficiency
(IQE
=
97.7%)
good
thermal
stability
(70.7%@423
K).
Abstract
Near‐infrared
(NIR)
phosphor‐converted
light‐emitting
diode
(pc‐LED)
light
sources
in
the
second
NIR
window
(NIR‐II,
1000–1700
nm)
have
sparked
great
interest
for
their
emerging
applications
non‐destructive
detection
and
medical
diagnostics
fields.
However,
development
of
efficient
NIR‐II
phosphors
that
can
be
excited
by
commercial
blue
LED
chips
remains
a
significant
challenge,
thus
impeding
pc‐LED.
Herein,
blue‐light‐excitable
broadband
luminescence
Ni
2+
is
achieved
upon
incorporating
Cr
3+
into
Ca
3
Ga
2
Ge
O
12
(CGGO)
host
simultaneously.
Through
energy
transfer
from
to
,
CGGO:Cr
,Ni
phosphor
presents
improved
emission
peaking
at
1470
nm
under
460
excitation.
The
internal/external
quantum
efficiency
values
are
significantly
13.8%/3.3%
24.6%/13.3%
along
with
enhanced
thermal
stability.
Finally,
pc‐LED
fabricated
combining
450
chip,
its
potential
examination
biomedical
imaging
fields
been
demonstrated.
strategy
co‐doping
solves
problem
cannot
effectively
provides
design
insights
exploit
more
ultra‐broadband
pc‐LEDs
based
on
chips.
ACS Materials Letters,
Journal Year:
2024,
Volume and Issue:
6(10), P. 4555 - 4563
Published: Sept. 3, 2024
Presently,
there
are
very
limited
options
for
a
broad-band
long-wavelength
near-infrared
phosphor-converted
light-emitting
diode
(LWNIR
pc-LED)
with
wavelengths
above
∼1500
nm,
and
most
LWNIR
phosphors
have
low
luminescence
quantum
efficiency.
Here,
Ni2+-doped
MgIn2O4
antispinel
were
prepared
by
high-temperature
solid-state
reaction
method.
Under
365
nm
excitation,
they
exhibited
emission
in
the
range
of
1200–2100
an
peak
∼1490
full
width
at
half-maximum
∼313
indicating
weak
crystal
field
environment
high
electron
polarization
around
center
[MgO6]
octahedron.
The
IQE
EQE
MgIn2O4:Ni2+
∼47.93%
∼34.66%,
respectively.
optimized
phosphor
was
encapsulated
LED
chip
to
obtain
pc-LED
device
night
vision
lighting,
nonvisual
detection,
biological
imaging.
Our
results
confirmed
that
lighting
based
imaging
technology
showed
clear
safety
advantages
over
traditional
high-energy
ray
