Chemical Engineering Journal, Journal Year: 2025, Volume and Issue: unknown, P. 162670 - 162670
Published: April 1, 2025
Language: Английский
Chemical Engineering Journal, Journal Year: 2025, Volume and Issue: unknown, P. 162670 - 162670
Published: April 1, 2025
Language: Английский
Applied Surface Science, Journal Year: 2025, Volume and Issue: unknown, P. 162368 - 162368
Published: Jan. 1, 2025
Language: Английский
Citations
0Applied Materials Today, Journal Year: 2025, Volume and Issue: 42, P. 102622 - 102622
Published: Feb. 1, 2025
Language: Английский
Citations
0Published: Jan. 1, 2025
Language: Английский
Citations
0ACS Applied Materials & Interfaces, Journal Year: 2025, Volume and Issue: unknown
Published: March 6, 2025
Flexible photodetectors have garnered significant attention in recent years due to their vast potential. Among these, amorphous Ga2O3 (a-Ga2O3) stands out as a highly promising candidate for flexible solar-blind ultraviolet photodetectors, owing its wide band gap, low-temperature fabrication advantages, and exceptional stability under extreme conditions. However, the of a-Ga2O3 inevitably introduces oxygen vacancy (VO) defects, leading declined photodetection performance compromised corrosion resistance. In this study, we developed zirconium (Zr) self-compensation doping strategy with concentration optimization suppress VO thus enhancing optoelectronic durability photodetectors. The introduction Zr significantly eliminated intrinsic defects films, lowering dark current by over 3 orders magnitude from ∼10-8 ∼10-11 A reducing response time factor 50, achieving 6 μs. detectivity optimized devices reached high level × 1014 Jones, indicating sensitivity light. Durability tests further demonstrated that exhibited outstanding mechanical robustness, maintaining 95% initial after 10,000 bending cycles, stable even harsh salt spray conditions 72 h. This work provides an effective solution developing high-performance tailored wearable applications environments.
Language: Английский
Citations
0ChemistrySelect, Journal Year: 2025, Volume and Issue: 10(10)
Published: March 1, 2025
Abstract This study investigates cinnabar (HgS) as a material for self‐powered electrochemical photodetection, addressing the challenges of high‐power consumption and inefficient charge transfer in conventional photodetectors. Current photodetector technologies often rely on external biasing, which limits their energy efficiency applicability remote sensing. In contrast, this work demonstrates that cinnabar‐based devices exhibit functionality, eliminating need power sources. Characterization techniques, such X‐ray diffraction optical response measurements reveal high crystallinity, hexagonal crystal structure, UV–visible absorption with 2 eV band gap making strong light‐harvesting material. Photoluminescence analysis shows near‐white light emission, enhancing its potential Thermogravimetric highlights phase transitions from α HgS to β HgS, indicating thermal stability crucial long‐term device performance. Electrochemical tests including cyclic voltammetry, confirm efficient is essential photodetection. Notably, photodetectors operation optimal photocurrent at 0 V bias, demonstrating rapid response, responsivity, enhanced stability. These results position promising energy‐efficient, next generation photodetection technologies, applications imaging, sensing, communication.
Language: Английский
Citations
0Materials Today Physics, Journal Year: 2025, Volume and Issue: unknown, P. 101702 - 101702
Published: March 1, 2025
Language: Английский
Citations
0ACS Applied Materials & Interfaces, Journal Year: 2025, Volume and Issue: unknown
Published: March 21, 2025
α-Ga2O3, known for its ultrawide bandgap and high breakdown electric field, has attracted significant attention in power electronics solar-blind photodetectors. However, the rigid insulating nature of sapphire substrates restricts development flexible α-Ga2O3-based devices, vertical high-power electronics. Here, self-supported α-Ga2O3 thin films were prepared by a Bridge Pier-like structure. In this structure, highly dispersion-controlled nanopillar arrays, an α-Fe2O3 array-type sacrificial layer, high-quality epitaxial sequentially grown on economical mist chemical vapor deposition (mist-CVD) technique. The flow channels created layer significantly enhanced etchant flow, enabling rapid detachment freestanding 3-μm-thick just 20 min─a nearly 10-fold increase efficiency compared to conventional designs. used fabricate photodetectors that, under 254 nm ultraviolet illumination, achieved on/off ratio 0.57 × 103 detectivity 3.18 1010 Jones, while also exhibiting exceptional mechanical flexibility optoelectronic stability with no degradation observed after 1000 bending cycles. This work provides pathway fabrication devices substrates, offering innovative strategy heteroepitaxial systems.
Language: Английский
Citations
0Chemical Engineering Journal, Journal Year: 2025, Volume and Issue: unknown, P. 162670 - 162670
Published: April 1, 2025
Language: Английский
Citations
0