Journal of the American Ceramic Society,
Journal Year:
2024,
Volume and Issue:
unknown
Published: Dec. 23, 2024
Abstract
A
uniform,
dense,
and
well‐bonded
mullite/Y
2
Si
O
7
/ZrO
(MYZ)
composite
barrier
coating
was
synthesized
using
a
spraying
technique
followed
by
two‐step
sintering
process.
The
microstructure,
phase
composition,
thermal
shock
resistance
of
the
MYZ
were
systematically
investigated.
process
comprised
two
stages.
In
initial
stage
(25–1350°C),
granular
mullite
grains
transformed
into
columnar
crystals
with
progressive
growth.
Concurrently,
eutectic
Y
formed
dispersed
within
grain
boundaries,
significantly
enhancing
coating's
density
adhesion.
subsequent
(∼1400°C),
ZrO
reacted
to
produce
yttria‐stabilized
zirconia
(YSZ)
in
situ.
YSZ
exhibited
excellent
interfacial
compatibility
substrate,
markedly
improving
high‐temperature
stability.
As
result,
achieved
high
hardness
coefficient
expansion
matching
that
SiC
substrate.
Remarkably,
withstood
20
cycles
between
25°C
1200°C
without
noticeable
damage.
Advanced Functional Materials,
Journal Year:
2025,
Volume and Issue:
unknown
Published: March 16, 2025
Abstract
Multidimensional
heterogeneous
interface
construction
and
multicomponent
dielectric
gene
optimization
have
emerged
as
viable
strategies
for
the
design
of
high‐performance
microwave
absorbing
materials
(MAMs)
with
broad
effective
absorption
bandwidth
(EAB).
Herein,
V
2
O
3
/VO/C@Ti
C
T
X
/TiO
composites
multidimensional
heterostructures
are
prepared
through
electrostatic
self‐assembly
modified
MIL‐88B(V)
MXene
followed
by
carbonization.
A
synchronous
manipulation
genes
intensity
built‐in
electric
field
(BIEF)
is
realized
tailoring
carbonation
temperature
precursor.
The
electron
transport
properties
at
interfaces
precisely
modulated
several
heterojunctions
BIEFs.
Simultaneously,
based
on
theoretical
computational
simulations
verifications,
it
found
that
spontaneous
BIEF
generated
in
situ‐constructed
can
activate
Mott–Schottky
barrier,
balancing
fermi
energy
levels
both
sides
enhancing
polarization.
Benefiting
from
modulation
system,
exhibited
an
RL
–50.10
dB
EAB
value
6.16
GHz
a
fill
ratio
20%.
This
work
offers
rational
insights
interfaces,
ultimately
aiding
development
stealth
intended
electronic
countermeasures.
