Crystallization of Na₂SrGe₆O₁₄:Cr³⁺,Yb³⁺ Glass Ceramics Enabling a Watt‐Level Output Power NIR‐I/NIR‐II Lighting Source

Laser & Photonics Review, Journal Year: 2023, Volume and Issue: 18(1)

Published: Oct. 6, 2023

Abstract Near‐infrared (NIR) phosphor‐converted light‐emitting diodes (pc‐LEDs) lighting sources are applied in non‐destructive examination and illumination supplements for night monitoring. As a critical component of NIR pc‐LED, phosphors required to possess high external quantum efficiency (EQE), super thermal stability, broadband emission meet applications. Here, Na 2 SrGe 6 O 14 :Cr 3+ (NSGO:Cr) glass ceramics (GC) bulk via highly crystallization from precursor is fabricated demonstrates an ultrabroad band centered at 815 nm with full width half‐maximum (FWHM) 214 EQE 49.2%. Moreover, Yb co‐doping significantly enhances Cr → energy transfer (ET) due the stronger : F 7/2 ‐ 5/2 absorption. Benefiting ET process, Cr/Yb co‐doped GC exhibits NIR‐I/II improved stability 30.1% 65.0%. Furthermore, encapsulant‐free GC‐converted LED (GCc‐LED) prepared 52.2 mW output power photoelectric conversion (PCE) 19.4%. Under large current 600 mA, device watt‐level 922.4 PCE 9.1%. Compared conventional powder phosphors, NSGO:Cr/Yb performance can open up avenue fabrication sources.

Language: Английский

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Remote Control and Noninvasive Detection Enabled by a High-performance NIR pc-LED

Inorganic Chemistry, Journal Year: 2024, Volume and Issue: 63(5), P. 2655 - 2662

Published: Jan. 22, 2024

In an increasing manner, near-infrared phosphor-converted light-emitting diodes (NIR pc-LEDs) are considered to be exemplary light sources owing their notable attributes of elevated output power, economical nature, and exceptional portability. NIR phosphors critical components pc-LEDs. Herein, we report a novel blue excitable phosphor CaLu2ZrScAl3O12:Cr3+ (CLZSA:Cr3+) as crucial efficient broadband emitter. The CLZSA:Cr3+ displays intense emission peaking at 776 nm with full width half-maximum (fwhm) 140 nm. designed material also exhibits superior resistance thermal quenching, the intensity 423 K remains 80% that room temperature. constructed pc-LED device based on demonstrates high total power 68.4 mW drive current 100 mA, along photoelectric conversion efficiency 23.0%. Impressively, high-power pc-LEDs utilized for remote control non-invasive detection, resulting in excellent performance remarkable achievement.

Language: Английский

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Expanding near-infrared emission bandwidth in K2NaCrF6:Fe3+ phosphors through dipole-dipole energy transfer

Journal of Alloys and Compounds, Journal Year: 2024, Volume and Issue: 988, P. 174293 - 174293

Published: March 26, 2024

Language: Английский

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Research progress and application prospect of transition metal Cr ions in near infrared luminescence

Ceramics International, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 1, 2025

Language: Английский

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Near‐Unity and Near‐Zero‐Thermal‐Quenching Luminescent GAGG–Al₂O₃:Cr³⁺ Ceramic via Containerless Solidification and Glass Crystallization Methods for NIR Spectroscopy Application

Laser & Photonics Review, Journal Year: 2025, Volume and Issue: unknown

Published: March 18, 2025

Abstract Near‐infrared (NIR) light is widely used in real‐time testing fields such as organic component detection and biological imaging owing to its strong tissue penetration nondestructive properties. However, the performance of NIR phosphor‐converted light‐emitting diodes (pc‐LEDs) constrained by limitations efficiency output power. In this work, Gd 3 Al Ga 2 O 12 (GAGG)–Al :Cr 3+ ceramics are successfully synthesized via containerless solidification glass crystallization methods. The matrix functions an optically active akin GAGG, mitigating concentration quenching effects while preserving absorption. Under 450 nm excitation, ceramic exhibits intense luminescence, achieving exceptional internal/external quantum efficiencies (IQE/EQE = 96.8%/46.1%) remarkable thermal stability (94.3%@150 °C). ceramic‐converted LED (cc‐LED) demonstrates outstanding photoelectric conversion (28%@350 mA) robust (236 mW@350 mA). Additionally, laser diode (LD)‐excited device achieves watt‐level (1.52 W@10 W mm −2 ). As a proof concept, source shows immense potential for diverse applications including plant illumination, testing, bioimaging systems. Therefore, innovative GAGG–Al NIR‐LED&LD not only broadens practical application scope sources but also offers transformative pathway next‐generation compact high‐power devices field.

Language: Английский

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Broadband Near-Infrared Long Persistent Luminescence in Cr3+-Doped CaY2Ga4GeO12 Phosphors for Advanced Light Source Applications

Ceramics International, Journal Year: 2025, Volume and Issue: unknown

Published: April 1, 2025

Language: Английский

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Cr3+ activated Gd3Sc2Al3O12 garnet phosphor ceramic with broadband emissions and enhanced thermal stability toward high-power near-infrared LED/LD

Ceramics International, Journal Year: 2024, Volume and Issue: 50(15), P. 26624 - 26633

Published: April 28, 2024

Language: Английский

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Optimized Gd₂O₂S:Pr Scintillation Films for X-ray Flat Panel Imaging: Balancing Enhanced Efficiency with Flexibility

ACS Applied Optical Materials, Journal Year: 2024, Volume and Issue: 2(6), P. 1072 - 1080

Published: May 24, 2024

Scintillation materials are pivotal in diverse applications, such as medical diagnostics and radiation detection. Traditional methods for producing solid scintillators typically require high crystallization temperatures prolonged processing times, which lead to elevated costs. Additionally, their intrinsic structural rigidity limits the development of specialized structures large-scale detectors. In this study, we synthesized a Gd2O2S:Pr phosphor using hot water bath reduction method enhanced its microstructural luminescent properties by incorporating various fluxes. We then created flexible organic–inorganic composite scintillation film composed phosphors polydimethylsiloxane (PDMS). This Gd2O2S:Pr–PDMS demonstrated remarkable flexibility significantly XEL integral intensity compared commercial Bi4Ge3O12 (BGO) crystal. Remarkably, X-ray imaging with detector enabled clear visualization chip's internal structure. These findings underscore significant potential prepared flat panel applications.

Language: Английский

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Enhancement strategy of thermal stability and photoluminescent intensity of Cr3+ doped Li3+xZn2-2xGaxSbO6 phosphor in a strong crystal field

Journal of Alloys and Compounds, Journal Year: 2024, Volume and Issue: 1010, P. 177462 - 177462

Published: Nov. 8, 2024

Language: Английский

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Expanding Near-Infrared Emission Bandwidth in K2nacrf6:Fe3+ Phosphors Through Dipole-Dipole Energy Transfer

Published: Jan. 1, 2024

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Language: Английский

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