Multilevel Resistive Switching Dynamics by Controlling Phase and Self‐Assembled Nanochannels in HfO2 DOI
Tanmayee Parida, Minh Anh Luong, Santanu Das

et al.

Small, Journal Year: 2024, Volume and Issue: unknown

Published: Dec. 5, 2024

Abstract A resistive switching device with precise control over the formation of conductive filaments (CF) holds immense potential for high‐density memory arrays and atomic‐scale in‐memory computing architectures. While ion migration electrochemical mechanisms are well understood, controlling evolution CF remains challenging practical random‐access (RRAM) deployment. This study introduces a systematic approach to modulate oxygen vacancies (OV) in HfO 2 films Ag/HfO /Pt‐based RRAM devices by substrate temperature. At 300 °C, film exhibits dominant monoclinic phase maximum OV concentration, which plays key role achieving optimal multilevel behavior. Self‐assembled nanochannels guide evolution, diffusion Ag at inside these suggests synergistic interplay between Ag⁺ reseting voltage‐controlled states. addresses endurance/retention trade‐off an impressive R on /R off ratio ≈8000 while demonstrating growth temperature‐driven modulation as tool multi‐bit data storage. These findings provide blueprint developing high‐performance oxide‐based offer valuable insights into mechanisms, paving way future low‐power, technologies.

Language: Английский

Evaluation of performance and reliability of TFT devices with ultra-thin HfTiO dielectric layer deposited by plasma enhanced atomic layer deposition DOI
Wenzhi Zhang, Xiaoying Zhang,

Zhi-Xuan Zhang

et al.

Surface and Coatings Technology, Journal Year: 2025, Volume and Issue: 497, P. 131782 - 131782

Published: Jan. 14, 2025

Language: Английский

Citations

0
Ferroelectricity in amorphous aluminum oxynitride films synthesized by inductively coupled plasma assisted atomic layer deposition DOI
Dominic A. Dalba, Somayeh Saadat Niavol, Xiaoman Zhang

et al.

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena, Journal Year: 2025, Volume and Issue: 43(2)

Published: Feb. 11, 2025

Aluminum nitride-based ferroelectric thin films show significant promise for neuromorphic computing applications. Deposition by reactive sputtering, the most common approach to synthesizing these materials, leads mosaic disorder and point defects. To combat challenges, we use a different demonstrate growth of amorphous aluminum oxynitride (AlON) inductively coupled hydrazine plasma enhanced atomic layer deposition (ALD). Electrical property characterization using positive-up negative-down measurements shows remanent polarization 1.58 μC cm−2 in AlON grown at 350 °C CMOS-compatible process, piezoresponse force microscopy hysteresis poling experiments yield behavior consistent with ferroelectricity. Furthermore, sub-5 nm thick devices were able be switched below 5 V. Structural was performed x-ray photoelectron spectroscopy depth profiling, spectroscopic ellipsometry, diffraction, low-angle reflectivity measurements. ALD provides an alternative grow advantages from device scaling standpoint.

Language: Английский

Citations

0
Exploring resistive switching in flexible, forming-free Ti/NiO/AZO/PET memory device for future wearable electronics DOI Creative Commons

Adiba Adiba,

Ph. Nonglen Meitei, Tufail Ahmad

et al.

Scientific Reports, Journal Year: 2025, Volume and Issue: 15(1)

Published: March 10, 2025

Resistive Random Access Memory (ReRAM) is an emerging class of non-volatile memory that stores data by altering the resistance a material within cell. Unlike traditional technologies, ReRAM operates using voltage to induce change in metal oxide layer, which can then be read as binary state (0 or 1). In this work, we present flexible, forming-free, device aluminium-doped zinc (AZO) electrode and nickel (NiO) active layer. The fabricated Ti/NiO/AZO/PET demonstrates reliable bipolar resistive switching (BRS) with two distinct stable states, crucial for neuromorphic computing. Electrical tests showed high low states set (VSET) ≈ 5.4 V reset (VRESET) 2.9 V, endurance over 400 cycles retention around 10³ seconds. Different conduction mechanisms were observed (HRS) (LRS) like ohmic space charge limited current (SCLC). characterization under bending conditions demonstrated device's performance reliability, minimal variation VSET VRESET values. These results highlight potential NiO/AZO-based flexible high-density storage wearable electronics applications.

Language: Английский

Citations

0
Reactive sputtering deposited α-MoO3 thin films for forming-free resistive random-access memory DOI

Zhaoxin Guo,

Xiaoxu Lai,

Wenhui Xu

et al.

Solid-State Electronics, Journal Year: 2025, Volume and Issue: unknown, P. 109130 - 109130

Published: April 1, 2025

Language: Английский

Citations

0
Crystallinity‐controlled volatility tuning of ZrO2 memristor for physical reservoir computing DOI Creative Commons

Dae Kyu Lee,

Gichang Noh,

Seungmin Oh

et al.

InfoMat, Journal Year: 2024, Volume and Issue: unknown

Published: Oct. 11, 2024

Abstract Memristors have been emerging as promising candidates for computing systems in post‐Moore applications, particularly electrochemical metallization‐based memristors, which are poised to play a crucial role neuromorphic and machine learning. These devices favored their high integration density, low power consumption, rapid switching speed, significant on/off ratio. Despite advancements various materials, achieving adequate electrical performance—characterized by threshold (TS) behavior, spontaneous reset, off‐state resistance—remains challenging due the limitations conductance filament control within nanoscale resistive layer. In this study, we introduce an efficient method ZrO 2 crystallinity tunable volatility memristor establishing paths through simple thermal treatment process single oxide The effect of create localized enhancing Ag migration improving TS behavior is also investigated. contrast its amorphous counterpart, crystallized volatile memristor, treated annealing, demonstrates steep slope (0.21 mV dec –1 ), resistance state (25 GΩ), forming‐free characteristics. superior performance attributed conductive filaments along low‐energy pathways, such dislocations grain boundaries. By coupling with enhanced believe that finely tuned function short‐term memory reservoir computing, making it well‐suited tasks audio image recognition.

Language: Английский

Citations

2
True random number generator using stochastic noise signal of memristor with variation tolerance DOI
Dongsheng Yu,

Suhyeon Ahn,

Sangwook Youn

et al.

Chaos Solitons & Fractals, Journal Year: 2024, Volume and Issue: 189, P. 115708 - 115708

Published: Nov. 11, 2024

Language: Английский

Citations

0
Enhanced Transparency and Resistive Switching Characteristics in AZO/HfO2/Ti RRAM Device via Post Annealing Process DOI Creative Commons

Yuseong Jang,

Chanmin Hwang,

Seokhwan Bang

et al.

Inorganics, Journal Year: 2024, Volume and Issue: 12(12), P. 299 - 299

Published: Nov. 21, 2024

As interest in transparent electronics increases, ensuring the reliability of RRAM (T-RRAM) devices, which can be used to construct electronics, has become increasingly important. However, defects and traps within these T-RRAM devices degrade their reliability. In this study, we investigated improvement transparency with an AZO/HfO2/Ti structure through rapid thermal annealing (RTA) at 450 °C for 60 s a nitrogen atmosphere. The device without RTA exhibited low transmittance 30%, whereas showed significantly higher over 75%. Furthermore, operated lower current levels after RTA, resulted reduction its operating voltages, forming, setting, reset voltages changed from 3.3, 2.4, −5.1 V, respectively, 2, 1, −2.7 V. This led endurance characteristics device, thereby suggests that improvements attributed trap density caused by RTA.

Language: Английский

Citations

0
Multilevel Resistive Switching Dynamics by Controlling Phase and Self‐Assembled Nanochannels in HfO2 DOI
Tanmayee Parida, Minh Anh Luong, Santanu Das

et al.

Small, Journal Year: 2024, Volume and Issue: unknown

Published: Dec. 5, 2024

Abstract A resistive switching device with precise control over the formation of conductive filaments (CF) holds immense potential for high‐density memory arrays and atomic‐scale in‐memory computing architectures. While ion migration electrochemical mechanisms are well understood, controlling evolution CF remains challenging practical random‐access (RRAM) deployment. This study introduces a systematic approach to modulate oxygen vacancies (OV) in HfO 2 films Ag/HfO /Pt‐based RRAM devices by substrate temperature. At 300 °C, film exhibits dominant monoclinic phase maximum OV concentration, which plays key role achieving optimal multilevel behavior. Self‐assembled nanochannels guide evolution, diffusion Ag at inside these suggests synergistic interplay between Ag⁺ reseting voltage‐controlled states. addresses endurance/retention trade‐off an impressive R on /R off ratio ≈8000 while demonstrating growth temperature‐driven modulation as tool multi‐bit data storage. These findings provide blueprint developing high‐performance oxide‐based offer valuable insights into mechanisms, paving way future low‐power, technologies.

Language: Английский

Citations

0