Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown
Published: April 24, 2025
Abstract This study explores the application of incremental step pulse with verify algorithm (ISPVA) scheme in Pt/TiO X /TiN vertical resistive random‐access memory (VRRAM) devices to enhance both reliability and controllability switching. ISPVA improves linearity symmetry switching, enabling accurate representation up 6‐bit states ensuring precise transitions between low high resistance states. Additionally, ensures consistent current across different layers, thereby improving electrical response uniformity enhancing performance multilayer structures for high‐density applications. These improvements provide a stable window guarantee device's endurance 1000 cycles. further demonstrates implementation various synaptic functions, including spike‐time‐dependent plasticity (STDP), spike‐number‐dependent (SNDP), spike‐amplitude‐dependent (SADP), spike‐duration‐dependent (SDDP), spike‐rate‐dependent (SRDP). The findings also demonstrate that nociceptive Pavlovian characteristics can be achieved on‐receptor computing associative learning. By integrating advanced fabrication techniques, VRRAM effectively address challenges such as device‐to‐device variability stochastic properties, establishing new benchmark next‐generation technologies.
Language: Английский