Effect of copper substitution on the structural, optical, and magnetic properties of β-Ga₂O₃ powders

Applied Physics A, Journal Year: 2025, Volume and Issue: 131(3)

Published: Feb. 5, 2025

Language: Английский

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Material design and mechanism interpretation of metal oxide nanofibers for improving gas sensitivity

Coordination Chemistry Reviews, Journal Year: 2025, Volume and Issue: 531, P. 216492 - 216492

Published: Feb. 10, 2025

Language: Английский

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Gallium behavior and isotopic compositions in marine siliceous sediments from the southern Mariana Trench

Global and Planetary Change, Journal Year: 2025, Volume and Issue: unknown, P. 104704 - 104704

Published: Jan. 1, 2025

Language: Английский

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Effects of Cu, Ag, and Au Elements Doping on the Electronic and Optical Properties of β-Ga₂O₃ via First-Principles Calculations

ACS Applied Materials & Interfaces, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 27, 2025

β-Ga2O3, as a semiconductor material with an ultrawide band gap (Eg > 4.8 eV), emerges promising candidate for ultraviolet (UV)-transparent semiconductors. Its distinctive property of high transparency from visible light to the region gives it broad application prospects in fields deep UV light-emitting diodes (LEDs), lasers, and electronic devices. This study employed first-principles calculations utilizing generalized gradient approximation+ U (GGA+U) method investigate impact doping β-Ga2O3 transition metals including copper (Cu), silver (Ag), gold (Au) on its structure optical properties. The findings reveal that under oxygen (O)-rich conditions, formation energy doped system is lower compared gallium (Ga)-rich conditions. And Cu-doped demonstrated possess lowest energy, indicating enhanced stability β-Ga2O3. Additionally, intrinsic calculated be 4.853 eV, whereas gaps metal (TM)-doped are significantly reduced. Specifically, Cu-doped, Ag-doped, Au-doped 1.228, 0.982, 1.648 respectively. reduction can attributed introduction impurity levels by metals, which modify electron distribution atoms vicinity Fermi level. Remarkably, exhibits superior absorption performance, incorporation such Cu, Ag, Au facilitates expansion range. transformation not only enhances material's light-harvesting capability but also improves providing crucial theoretical foundation development novel β-Ga2O3-based optoelectronic

Language: Английский

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Realizing High Stable Lithium Storage by Self-Healing Ga-Based Anode Designs

ACS Applied Electronic Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 11, 2025

Language: Английский

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Mg‐doped α‐Ga₂O₃ Nanorods for the Construction of Photoelectrochemical‐Type Self‐Powered Solar Blind UV Photodetectors and Underwater Imaging Application

Advanced Science, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 26, 2025

Abstract Underwater imaging technologies are increasingly crucial for environmental monitoring and resource exploration. However, the development of advanced photodetectors such applications faces significant challenges, including interference from ambient visible infrared light, adaptation to underwater environments, cost‐effectiveness. Photoelectrochemical‐type solar‐blind (PEC‐SBPDs) based on wide bandgap semiconductors have shown great promise in overcoming these challenges. Here, a novel approach enhance performance α‐Ga 2 O 3 ‐based PEC‐SBPDs is presented through Mg‐doping. By employing low‐cost hydrothermal synthesis technique, Mg‐doped nanorod arrays fabricated, which induces formation V ‐Mg Ga complexes that enhances interfacial catalytic activity improves transport photogenerated carriers. The optimized exhibits remarkable 435% increase photocurrent response compared undoped , with peak responsivity 34.54 mA W −1 . A 5 × PEC‐SBPD array nanorods successfully demonstrated imaging, achieving clear efficient challenging conditions. This study not only highlights superior environments but also opens new avenues high‐performance self‐powered sensing, other related applications.

Language: Английский

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Enhanced Performance UV photodetectors based on the β-Ga2O3/GaN photodiode of the reversed substitution growth with introduction nucleation layer of GaON by oxygen plasma treatment

Materials Today Physics, Journal Year: 2025, Volume and Issue: unknown, P. 101729 - 101729

Published: April 1, 2025

Language: Английский

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Low-temperature growth and characterization of β-Ga2O3 thin films by ECR-PEMOCVD

Materials Science in Semiconductor Processing, Journal Year: 2025, Volume and Issue: 194, P. 109588 - 109588

Published: April 22, 2025

Language: Английский

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Research on the Ga₂O₃/ZnGa₂O₄ mixed-phase films and solar-blind photodetectors prepared directly by annealing Zn alloying Ga₂O₃ films

Journal of Materials Chemistry C, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 1, 2025

The transition from a single-phase to mixed-phase thin film forms heterogeneous interfaces that significantly enhance solar-blind photodetector performance.

Language: Английский

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Intelligent Triboelectric Sliding Bearing for Gas leak Self-sensing and Mechanical Fault Self-diagnosis in Green Ammonia Production

Nano Energy, Journal Year: 2025, Volume and Issue: unknown, P. 111060 - 111060

Published: April 1, 2025

Language: Английский

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