Electrochem, Journal Year: 2025, Volume and Issue: 6(2), P. 15 - 15
Published: April 21, 2025
The manufacturing of integrated circuits involves multiple steps chemical mechanical planarization (CMP) involving different materials. Mitigating CMP-induced defects is a main requirement all CMP schemes. In this context, controlling galvanic corrosion particularly challenging task for planarizing device structures contact regions metals with dissimilar levels corrosivity. Since occurs in the reactive environment slurries, an essential aspect slurry engineering metal to control surface chemistries responsible these bimetallic effects. Using system based on copper and cobalt (used interconnects wiring blocking diffusion, respectively), present work explores certain theoretical experimental aspects evaluating barrier CMP. limitations conventional electrochemical tests studying CMP-related are examined, tribo-electrochemical method investigating systems demonstrated. Alkaline slurries sodium percarbonate used planarize both Co Cu samples. Galvanic controlled by using metal-selective complex forming functions malonic acid at sample surfaces. A commonly inhibitor, benzotriazole, employed further reduce
Language: Английский