Journal of Applied Polymer Science,
Journal Year:
2025,
Volume and Issue:
unknown
Published: Feb. 18, 2025
ABSTRACT
Overheating
of
electronic
devices
reduces
lifespan
and
increases
safety
risks.
The
use
graphite
films
with
high
thermal
conductivity
to
enhance
dissipation
in
equipment
is
significant
importance.
This
study
used
urea‐choline
chloride
(UCC)
modify
polyimide
(PI)
from
two
different
monomer
systems,
which
were
then
graphitized
prepare
a
novel
film
conductivity.
direct
formation
hydrogen
bonds
between
poly(amic
acid)
(PAA)
UCC
facilitates
the
ordered
structure
during
imidization,
enhancing
graphitization
degree
thermodynamic
properties
PI
films.
results
indicate
that
increased
30%
over
59%
4,4′‐oxydianiline‐pyromellitic
dianhydride
(OPU)
system
80%
92%
4,4′‐diaminobenzoyltiphenylamine‐3,3′,4,4′‐biphenyl
tetracarboxylic
(DBU)
system.
Notably,
dianhydride‐3.5
wt%
(OPU35)
(DBU35)
exhibited
highest
their
respective
coefficients
45
742
W/m
K,
representing
200%
47.8%
improvements
pure
PI‐based
provides
new
material
for
heat
devices.
Journal of Applied Polymer Science,
Journal Year:
2025,
Volume and Issue:
unknown
Published: Feb. 18, 2025
ABSTRACT
Overheating
of
electronic
devices
reduces
lifespan
and
increases
safety
risks.
The
use
graphite
films
with
high
thermal
conductivity
to
enhance
dissipation
in
equipment
is
significant
importance.
This
study
used
urea‐choline
chloride
(UCC)
modify
polyimide
(PI)
from
two
different
monomer
systems,
which
were
then
graphitized
prepare
a
novel
film
conductivity.
direct
formation
hydrogen
bonds
between
poly(amic
acid)
(PAA)
UCC
facilitates
the
ordered
structure
during
imidization,
enhancing
graphitization
degree
thermodynamic
properties
PI
films.
results
indicate
that
increased
30%
over
59%
4,4′‐oxydianiline‐pyromellitic
dianhydride
(OPU)
system
80%
92%
4,4′‐diaminobenzoyltiphenylamine‐3,3′,4,4′‐biphenyl
tetracarboxylic
(DBU)
system.
Notably,
dianhydride‐3.5
wt%
(OPU35)
(DBU35)
exhibited
highest
their
respective
coefficients
45
742
W/m
K,
representing
200%
47.8%
improvements
pure
PI‐based
provides
new
material
for
heat
devices.