Static bending and forced vibration analyses of a piezoelectric semiconductor cylindrical shell within first-order shear deformation theory

Applied Mathematical Modelling, Journal Year: 2023, Volume and Issue: 126, P. 625 - 645

Published: Nov. 10, 2023

Language: Английский

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Indentation behavior of a semi-infinite piezoelectric semiconductor under a rigid flat-ended cylindrical indenter

Applied Mathematics and Mechanics, Journal Year: 2024, Volume and Issue: 45(4), P. 649 - 662

Published: April 1, 2024

Language: Английский

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A thermodynamically consistent theory for flexoelectronics: Interaction between strain gradient and electric current in flexoelectric semiconductors

International Journal of Engineering Science, Journal Year: 2024, Volume and Issue: 208, P. 104165 - 104165

Published: Dec. 19, 2024

Language: Английский

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Mechanically manipulated in-plane electric currents and thermal control in piezoelectric semiconductor films

Acta Mechanica, Journal Year: 2024, Volume and Issue: 235(6), P. 3463 - 3481

Published: March 13, 2024

Language: Английский

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Flexoelectronics of a centrosymmetric semiconductor cylindrical nanoshell

Applied Mathematical Modelling, Journal Year: 2024, Volume and Issue: unknown, P. 115725 - 115725

Published: Sept. 1, 2024

Language: Английский

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Mechanical manipulation of electromechanical fields in multi-tunnel piezoelectric semiconductor thin film devices by creating localized transverse mechanical field excitations

Acta Mechanica, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 9, 2025

Language: Английский

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Electro-mechanical-carrier coupling behaviors of piezoelectric semiconductor fibers with p–n junctions under pull-out loading

Journal of Applied Physics, Journal Year: 2025, Volume and Issue: 137(8)

Published: Feb. 24, 2025

Due to their unique properties between carrier redistribution and built-in electric potential induced by external stress, piezoelectric semiconductor (PS) fibers are widely used in intelligent structures. In this paper, electromechanical coupling behaviors of PN junctions segmented PS fiber under pull-out loading analytically investigated. Based on the shear-lag model, stress transfer relationship elastic matrix is established. Closed form solutions axial interfacial shear potential, field, perturbation obtained. Results show that initial concentration has a significant influence compared with single homogeneous fiber. The homojunction heterojunction sensitive concentrations doping. Besides doping concentration, relevant fields can be regulated radius ratio as well. On basis linearized effect I–V curve plots small forward-biased voltage been investigated fundamental research will helpful understanding physical mechanism regulation junction composites guide for designing devices practical applications.

Language: Английский

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Analysis and modeling of two-dimensional piezoelectric semiconductor shell theory

European Journal of Mechanics - A/Solids, Journal Year: 2024, Volume and Issue: 106, P. 105331 - 105331

Published: April 26, 2024

Language: Английский

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Exact solutions for thermally induced electromechanical fields of PN junctions in centrosymmetric semiconductors

Journal of Applied Physics, Journal Year: 2024, Volume and Issue: 136(4)

Published: July 22, 2024

PN junctions play important roles in semiconductor devices. Flexoelectricity, an electromechanical coupling between strain gradient and electric polarization, has non-negligible contributions nano-devices. The thermoflexoelectric effect is a phenomenon which temperature gradients generate inhomogeneous strains further induce flexoelectric polarizations. Therefore, can affect carrier transport through the effect. In this paper, one-dimensional model of junction under uniform change established. Exact solutions for fields are obtained first time. effects gradient, doping level, coefficient on behaviors numerically analyzed. results indicate that concentrations p n regions sensitive to because screening mobile charge polarization induced by gradient. Meanwhile, field initial built-in depletion region jointly determine magnitude potential barrier, thus, temperature-gradient-induced tune switching characteristics junction. This study provides theoretical basis tuning behavior thermally fields.

Language: Английский

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Isogeometric boundary element method analysis for dielectric target shape optimization in electromagnetic scattering

Science Progress, Journal Year: 2024, Volume and Issue: 107(4)

Published: Oct. 1, 2024

In order to optimize the overall form of electromagnetic scattering in two-dimensional dielectric media, this work offers a frequency-domain boundary element method based on isogeometric analysis. The Isogeometric (IGABEM) is used guarantee geometric correctness during optimization and prevent over-refinement mesh. Non-uniform rational B-splines are discretize integrals model, enabling rapid numerical computation while ensuring high accuracy. Furthermore, as an alternative model for shape issues, gray wolf optimizer-based back-propagation neural network (GWO-ANN) created, with radar cross-section (RCS) objective function. Finally, GWO-ANN surrogate multi-frequency problems RCS computational examples, algorithm efficiently accurately solves under multiple frequencies.

Language: Английский

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