Two-Dimensional Linear Elasticity Equations of Thermo-Piezoelectric Semiconductor Thin-Film Devices and Their Application in Static Characteristic Analysis DOI Creative Commons
Hongyi He, Minjie Zhang, Wenjun Wang

et al.

Applied Sciences, Journal Year: 2024, Volume and Issue: 14(15), P. 6509 - 6509

Published: July 25, 2024

Based on the three-dimensional (3D) linear elasticity theory of piezoelectric semiconductor (PS) structures, inspired by variational principle and Mindlin plate theory, a two-dimensional (2D) higher-order equations for thin-film devices are established rectangular coordinate system, in which Newton’s law (i.e., stress equation motion), Gauss’s charge electrostatics), Continuity conservation holes electrons), drift–diffusion currents semiconductors, unavoidable thermo-deformation-polarization-carrier coupling response external stimulus field environment all considered. As typical application these equations, static characteristic analysis electromechanical fields extensional deformation PS device with thermal excitations is carried out utilizing zeroth-order double trigonometric series solution method. It revealed that deformations, electric potential, electron hole concentration perturbations, their current densities can be controlled actively via artificially tuning stimuli. Especially, higher temperature rise induce deeper potential well barrier, play vital role driving effectively motions redistributions electrons holes. Overall, derived 2D as quantitative results provide us some useful guidelines investigating regulation behavior devices.

Language: Английский

Physics-informed neural networks for analyzing size effect and identifying parameters in piezoelectric semiconductor nanowires DOI Creative Commons
Bing Bing Wang,

Dequan Meng,

Chunsheng Lu

et al.

Journal of Applied Physics, Journal Year: 2025, Volume and Issue: 137(2)

Published: Jan. 10, 2025

Piezoelectric semiconductors (PSCs) are crucial in micro-electromechanical systems, but analyzing their size effects and accurately determining flexoelectric parameters is challenging due to the complexity of multi-scale multi-field coupling. Physics-informed neural networks (PINNs), which merge physical laws with machine learning, provide a promising approach for solving partial differential equations parameter inversion. In this paper, we develop PINN model solve system fourth-order PSC nanowires, accounting strain gradient effects. Predictions by closely match results from traditional numerical methods. Additionally, minimal labeled data, can predict both solutions material parameters, such as coefficient. It expected that PINNs offer an effective method nanowires inverting key properties.

Language: Английский

Citations

1
Mechanical manipulation of electromechanical fields in multi-tunnel piezoelectric semiconductor thin film devices by creating localized transverse mechanical field excitations DOI
Wenjun Wang, Miaomiao Li, Luke Zhao

et al.

Acta Mechanica, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 9, 2025

Language: Английский

Citations

0
Structure-dependent electro-elastic analysis of flexoelectric semiconductor curved nanoshells based on the modified couple stress theory in orthogonal curvilinear coordinates DOI

Fuqi Zhou,

Xinqi Wang, Liangliang Chu

et al.

Acta Mechanica, Journal Year: 2025, Volume and Issue: unknown

Published: March 26, 2025

Language: Английский

Citations

0
A meshfree Galerkin formulation for nonlinear piezoelectric semiconductors in consideration of flexoelectricity DOI
Xiaodong Wang,

RuoYu Wang,

Chunsheng Lu

et al.

Journal of Computational Physics, Journal Year: 2025, Volume and Issue: unknown, P. 114013 - 114013

Published: April 1, 2025

Language: Английский

Citations

0
Electro-mechanical-carrier coupling behaviors of piezoelectric semiconductor fibers with p–n junctions under pull-out loading DOI Creative Commons
Ren Chang-yu, Chao Liu, K.F. Wang

et al.

Journal of Applied Physics, Journal Year: 2025, Volume and Issue: 137(8)

Published: Feb. 24, 2025

Due to their unique properties between carrier redistribution and built-in electric potential induced by external stress, piezoelectric semiconductor (PS) fibers are widely used in intelligent structures. In this paper, electromechanical coupling behaviors of PN junctions segmented PS fiber under pull-out loading analytically investigated. Based on the shear-lag model, stress transfer relationship elastic matrix is established. Closed form solutions axial interfacial shear potential, field, perturbation obtained. Results show that initial concentration has a significant influence compared with single homogeneous fiber. The homojunction heterojunction sensitive concentrations doping. Besides doping concentration, relevant fields can be regulated radius ratio as well. On basis linearized effect I–V curve plots small forward-biased voltage been investigated fundamental research will helpful understanding physical mechanism regulation junction composites guide for designing devices practical applications.

Language: Английский

Citations

0
Dispersion of particles and airflow optimization for a semiconductor cleanroom DOI
Chunli Tang,

Tianchi Liang,

Kambiz Vafai

et al.

Journal of Aerosol Science, Journal Year: 2025, Volume and Issue: unknown, P. 106570 - 106570

Published: March 1, 2025

Language: Английский

Citations

0
Nonlinear vibration of five-layered functionally graded piezoelectric semiconductor nano-plate on Pasternak foundation DOI

Xue‐Qian Fang,

Yi-Hao Zou,

Qilin He

et al.

Mechanics Based Design of Structures and Machines, Journal Year: 2024, Volume and Issue: unknown, P. 1 - 22

Published: June 11, 2024

Language: Английский

Citations

1
Two-Dimensional Linear Elasticity Equations of Thermo-Piezoelectric Semiconductor Thin-Film Devices and Their Application in Static Characteristic Analysis DOI Creative Commons
Hongyi He, Minjie Zhang, Wenjun Wang

et al.

Applied Sciences, Journal Year: 2024, Volume and Issue: 14(15), P. 6509 - 6509

Published: July 25, 2024

Based on the three-dimensional (3D) linear elasticity theory of piezoelectric semiconductor (PS) structures, inspired by variational principle and Mindlin plate theory, a two-dimensional (2D) higher-order equations for thin-film devices are established rectangular coordinate system, in which Newton’s law (i.e., stress equation motion), Gauss’s charge electrostatics), Continuity conservation holes electrons), drift–diffusion currents semiconductors, unavoidable thermo-deformation-polarization-carrier coupling response external stimulus field environment all considered. As typical application these equations, static characteristic analysis electromechanical fields extensional deformation PS device with thermal excitations is carried out utilizing zeroth-order double trigonometric series solution method. It revealed that deformations, electric potential, electron hole concentration perturbations, their current densities can be controlled actively via artificially tuning stimuli. Especially, higher temperature rise induce deeper potential well barrier, play vital role driving effectively motions redistributions electrons holes. Overall, derived 2D as quantitative results provide us some useful guidelines investigating regulation behavior devices.

Language: Английский

Citations

1