Considerations about the determination of optical bandgap from diffuse reflectance spectroscopy using the tauc plot

Journal of Optics, Journal Year: 2024, Volume and Issue: unknown

Published: Feb. 24, 2024

Language: Английский

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Origin of Anomalous Transient Photocurrent in Solution-Processed WS₂ Nanosheet-Based Self-Powered Photodetectors

ACS Applied Nano Materials, Journal Year: 2024, Volume and Issue: 7(7), P. 8007 - 8021

Published: March 25, 2024

Solution-processed self-powered photodetectors were fabricated by using tungsten disulfide (WS2) nanosheets (NSs) in a vertical structure. The device shows high on–off ratio of ∼2.4 × 105 under illumination from light-emitting diode wavelength (λ) ∼ 625 nm and an intensity 100 mW/cm2. photoresponsivity the peaks around λ 630 523 nm, which correspond to characteristic absorption WS2 NSs. devices exhibit fast photoresponse within few milliseconds pulsed anomalous slow decay photocurrent during pulse width (pulse-on time ∼50 s). photodetector constant is studied detail steady-state transient measurements. intensity-dependent measurements show sublinear behavior with due presence traps trap-limited conduction devices. Similarly, time-dependent measurement various intensities depicts accumulation trapping charges at interfaces, act as recombination centers that lead charge carrier loss. Additionally, different vacuum conditions indicate influence adsorbate molecules atmosphere. Furthermore, interfacial effects performance-limiting factors are analyzed probing dynamics these function intensity, background illumination, ambient pressure, temperature. Our investigations on shed light how extracted, accumulated, recombined WS2-transport layer interfaces.

Language: Английский

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Recent Developments of Advanced Broadband Photodetectors Based on 2D Materials

Nanomaterials, Journal Year: 2025, Volume and Issue: 15(6), P. 431 - 431

Published: March 11, 2025

With the rapid development of high-speed imaging, aerospace, and telecommunications, high-performance photodetectors across a broadband spectrum are urgently demanded. Due to abundant surface configurations exceptional electronic properties, two-dimensional (2D) materials considered as ideal candidates for photodetection applications. However, with both high responsivity fast response time remain challenging issue all researchers. This review paper is organized follows. Introduction introduces fundamental properties performances transition metal dichalcogenides (TMDCs), perovskites, topological insulators, graphene, black phosphorus (BP). section provides an in-depth analysis their unique optoelectronic probes intrinsic physical mechanism detection. In Two-Dimensional Material-Based Broadband Photodetectors, some innovative strategies given expand detection wavelength range 2D material-based enhance overall performances. Among them, chemical doping, defect engineering, constructing heterostructures, strain engineering methods found be more effective improving The last addresses challenges future prospects photodetectors. Furthermore, meet practical requirements very large-scale integration (VLSI) applications, work reliability, production cost compatibility planar technology should paid much attention.

Language: Английский

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A review on graphene-based inorganic nanostructures: Synthesis, functionalization, and applications in photocatalytic degradation and electrochemical sensing of pollutants

Inorganic Chemistry Communications, Journal Year: 2025, Volume and Issue: unknown, P. 114398 - 114398

Published: March 1, 2025

Language: Английский

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Advanced Materials for Biological Field‐Effect Transistors (Bio‐FETs) in Precision Healthcare and Biosensing

Advanced Healthcare Materials, Journal Year: 2025, Volume and Issue: unknown

Published: April 10, 2025

Abstract Biological Field Effect Transistors (Bio‐FETs) are redefining the standard of biosensing by enabling label‐free, real‐time, and extremely sensitive detection biomolecules. At center this innovation is fundamental empowering role advanced materials, such as graphene, molybdenum disulfide, carbon nanotubes, silicon. These when harnessed with downstream biomolecular probes like aptamers, antibodies, enzymes, allow Bio‐FETs to offer unrivaled sensitivity precision. This review an exposition how advancements in materials science have permitted detect biomarkers low concentrations, from femtomolar attomolar levels, ensuring device stability reliability. Specifically, examines incorporation cutting‐edge architectures, flexible / stretchable multiplexed designs, expanding frontiers contributing development more adaptable user‐friendly Bio‐FET platforms. A key focus placed on synergy artificial intelligence (AI), Internet Things (IoT), sustainable approaches fast‐tracking toward transition research into practical healthcare applications. The also explores current challenges material reproducibility, operational durability, cost‐effectiveness. It outlines targeted strategies address these hurdles facilitate scalable manufacturing. By emphasizing transformative played their cementing position Bio‐FETs, positions a cornerstone technology for future solution precision would lead era where herald massive strides biomedical diagnostics subsume.

Language: Английский

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Advances in Two-Dimensional Materials Synthesis and MoS₂/WS₂ Heterostructure Photodetectors

Applied Physics, Journal Year: 2025, Volume and Issue: 15(04), P. 242 - 255

Published: Jan. 1, 2025

Language: Английский

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Sulfuration-induced enhancement of photodetection performance of photoconductive detector based on Bi2O2Se thin film

Surfaces and Interfaces, Journal Year: 2024, Volume and Issue: 54, P. 105227 - 105227

Published: Oct. 5, 2024

Language: Английский

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Photovoltaic Response of Liquid Phase Exfoliated Graphene - MoS₂ Heterostructures

Journal of the Physical Society of Japan, Journal Year: 2024, Volume and Issue: 93(8)

Published: July 3, 2024

Language: Английский

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Enhancement in light absorption of InAs-thin-film photodetectors with metal nanowire grating

Published: Aug. 14, 2024

In this work, we have designed a novel surface structure for enhancing the optical absorption of two-dimensional indium arsenide (InAs) photodetectors, with combination local light-field enhancement and coupled back reflection effect to break through performance bottleneck thin-film photodetectors. Through finite element-based opto-electronic simulation, our-proposed device has elevated light marked field localization within visible near-infrared spectrum. Notably, it achieves maximum 70.8% at wavelength 780nm, which is 5.53 times that comparison sample. Moreover, introduction metal grating endowed our design excellent photoelectrical response performance, namely responsivity 177.65 A·W^-1 , specific detectivity 1.367×10¹⁰ Jones, time 1.5 ns under bias voltage 0.01V. This work provides an effective strategy photoconductive detectors offers beneficial guidance designing high-performance optoelectronic devices

Language: Английский

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