Processes,
Journal Year:
2024,
Volume and Issue:
12(12), P. 2806 - 2806
Published: Dec. 8, 2024
This
study
explores
cobalt–cerium
(Co90Ce10)
thin
films
deposited
on
silicon
(Si)
(100)
and
glass
substrates
via
direct
current
(DC)
magnetron
sputtering,
with
thicknesses
from
10
nanometer
(nm)
to
50
nm.
Post-deposition
annealing
treatments,
conducted
100
°C
300
°C,
resulted
in
significant
changes
surface
roughness,
energy,
magnetic
domain
size,
demonstrating
the
potential
tune
properties
thermal
processing.
The
exhibited
hydrophilic
behavior,
thinner
showing
a
stronger
substrate
effect,
crucial
for
engineering
device
fabrication.
Increased
film
thickness
reduced
transmittance
due
photon
signal
inhibition
light
scattering,
important
optimizing
optical
devices.
Furthermore,
reduction
sheet
resistance
resistivity
increasing
heat
treatment
highlights
significance
of
these
parameters
electrical
practical
applications.
Journal of Materials Science,
Journal Year:
2024,
Volume and Issue:
59(21), P. 9472 - 9490
Published: May 27, 2024
Abstract
In
this
study,
Mg-doped
zinc
oxide
(MZO)
thin
films
were
deposited
through
radio
frequency
(RF)
sputtering
for
different
substrate
temperatures
ranging
from
room
temperature
(25
°C)
to
350
°C.
XRD
analysis
depicted
that
the
higher
lead
increased
crystallite
size.
From
UV–Vis
spectroscopy,
transmittance
(T)
was
found
approximately
95%
and
optical
band
energy
gap
(E
g
)
determined
around
3.70
eV.
Hall
effect
measurement
system
measured
carrier
concentration
resistivity
of
all
in
order
10
14
cm
−3
3
Ω-cm,
respectively.
Since
structural
optoelectrical
properties
MZO
not
significantly
affected
by
temperatures,
Aluminium
(Al)
co-doped
film
improve
properties.
As
a
result,
Al
doped
(AMZO)
up
~
20
(MZO),
decreased
–1
Ω-cm
representing
significant
changes
electrical
without
affecting
transmittance.
This
study
opens
pathway
improving
buffer
layer
can
enhance
cell
performance
CdTe
solar
cells.
Graphical
abstract
Condensed Matter,
Journal Year:
2025,
Volume and Issue:
10(1), P. 6 - 6
Published: Jan. 15, 2025
Zinc
oxide
(ZnO)
exhibits
piezoelectric
properties
due
to
its
asymmetric
structure,
making
it
suitable
for
devices.
This
experiment
deposited
Fe-doped
ZnO
films
on
silicon
substrates
using
a
dual-target
magnetron
co-sputtering
system.
The
achieved
high
c-axis
orientation,
and
the
coefficient
of
film
reached
optimal
value
44.35
pC/N
when
doped
with
0.5
at%
Fe.
is
approximately
three
times
that
undoped
13.04
pC/N.
study
utilized
diffractometer,
scanning
electron
microscopy,
transmission
atomic
force
microscopy
evaluate
crystal
structure
evolution
zinc
employed
X-ray
photoelectron
spectroscopy
assess
valence
state
Fe
ions.
