Journal of Colloid and Interface Science, Journal Year: 2025, Volume and Issue: 693, P. 137631 - 137631
Published: April 17, 2025
Language: Английский
Journal of Colloid and Interface Science, Journal Year: 2025, Volume and Issue: 693, P. 137631 - 137631
Published: April 17, 2025
Language: Английский
Nanomaterials, Journal Year: 2025, Volume and Issue: 15(7), P. 517 - 517
Published: March 29, 2025
This study explores the resistive switching (RS) behavior and conduction mechanisms of Ag/SF-Ag NP/Si memristors with varying Ag NP concentrations. I-V measurements confirm stable RS characteristics across 100 cycles, consistent set reset voltages. Increasing concentration enhances conductive filament formation, leading to sharper transitions a higher HRS/LRS ratio, w-hich increases from 43 (0 wt% NP) 4.6 × 104 (10 NP). Log(I)-log(V) analysis reveals transition Ohmic Poole–Frenkel mechanisms, indicating improved charge percolation. Reliability tests show LRS values, while HRS exhibits greater variation at These results demonstrate that NPs play crucial role in optimizing memristor performance, improving characteristics, enhancing reliability. The findings suggest are promising for high-performance memory neuromorphic computing applications.
Language: Английский
Citations
0Journal of Colloid and Interface Science, Journal Year: 2025, Volume and Issue: 693, P. 137631 - 137631
Published: April 17, 2025
Language: Английский
Citations
0