Materials, Journal Year: 2024, Volume and Issue: 17(24), P. 6203 - 6203
Published: Dec. 19, 2024
Antimony selenide (Sb2Se3) shows promise for photovoltaics due to its favorable properties and low toxicity. However, current Sb2Se3 solar cells exhibit efficiencies significantly below their theoretical limits, primarily interface recombination non-optimal device architectures. This study presents a comprehensive numerical investigation of thin-film using SCAPS-1D simulation software, focusing on architecture optimization engineering. We systematically analyzed configurations (substrate superstrate), hole-transport layer (HTL) materials (including NiOx, CZTS, Cu2O, CuO, CuI, CuSCN, CZ-TA, Spiro-OMeTAD), thicknesses, carrier densities, resistance effects. The substrate configuration with molybdenum back contact demonstrated superior performance compared the superstrate design, energy band alignment at Mo/Sb2Se3 interface. Among investigated HTL materials, Cu2O exhibited optimal minimal valence-band offset, achieving maximum efficiency 0.06 μm thickness. Device revealed critical parameters: series should be minimized 0–5 Ω-cm2 while maintaining shunt above 2000 Ω-cm2. optimized Mo/Cu2O(0.06 μm)/Sb2Se3/CdS/i-ZnO/ITO/Al structure achieved remarkable power conversion (PCE) 21.68%, representing significant improvement from 14.23% in conventional without HTL. provides crucial insights practical development high-efficiency cells, demonstrating impact engineering overall performance.
Language: Английский