Materials Chemistry and Physics, Journal Year: 2025, Volume and Issue: unknown, P. 130412 - 130412
Published: Jan. 1, 2025
Language: Английский
Materials Chemistry and Physics, Journal Year: 2025, Volume and Issue: unknown, P. 130412 - 130412
Published: Jan. 1, 2025
Language: Английский
Journal of Energy Storage, Journal Year: 2025, Volume and Issue: 113, P. 115684 - 115684
Published: Feb. 8, 2025
Language: Английский
Citations
1Materials Research Bulletin, Journal Year: 2025, Volume and Issue: unknown, P. 113374 - 113374
Published: Feb. 1, 2025
Language: Английский
Citations
1Materials Chemistry and Physics, Journal Year: 2025, Volume and Issue: unknown, P. 130625 - 130625
Published: Feb. 1, 2025
Language: Английский
Citations
1Journal of Alloys and Compounds, Journal Year: 2024, Volume and Issue: 1010, P. 177527 - 177527
Published: Nov. 12, 2024
Language: Английский
Citations
8Chemical Engineering Journal, Journal Year: 2024, Volume and Issue: 498, P. 155263 - 155263
Published: Aug. 30, 2024
Language: Английский
Citations
7Journal of Alloys and Compounds, Journal Year: 2023, Volume and Issue: 980, P. 173385 - 173385
Published: Dec. 30, 2023
Language: Английский
Citations
13Heliyon, Journal Year: 2024, Volume and Issue: 10(4), P. e26050 - e26050
Published: Feb. 1, 2024
Mn-substituted Cu and Zn co-doped spinel-typed nano-crystalline ferrites having nominal composition Ni
Language: Английский
Citations
5Ceramics International, Journal Year: 2024, Volume and Issue: 50(12), P. 21281 - 21288
Published: March 19, 2024
Language: Английский
Citations
5Journal of the Indian Chemical Society, Journal Year: 2024, Volume and Issue: 101(7), P. 101171 - 101171
Published: May 15, 2024
Language: Английский
Citations
5Nanosystems Physics Chemistry Mathematics, Journal Year: 2024, Volume and Issue: 15(4), P. 520 - 529
Published: Aug. 30, 2024
The production of nano-sized semiconductor oxide materials, such as indium-gallium-zinc (IGZO), will make it possible to use for the transistors manufacture using printing methods.The sol-gel method is one widely known and used methods producing materials.As known, a chelating reagent (complexing agent) can influence both synthesis process final phase composition.The results with various reagents: citric acid, ethylene glycol, oxalic urea, glycerol sucrose are presented.The samples were studied by X-ray diffraction.It was found that glycol reagents obtain homogeneous crystalline material at 900 • C YbFe 2 O 4 -type structure, R-3m (166) space group.Unit cell parameters crystallite size (Halder-Wagner method) InGaZnO single-phase calculated.KEYWORDS oxide, In-Ga-Zn-O, IGZO, method, complexing agent, reagent, formation, nanomaterial ACKNOWLEDGEMENTS This study represents an integration two diverse projects supported Russian Science Foundation (No. 24-19-00468; conceptualization, comparative analysis agents on processes, well detailed characterization IGZO-3, IGZO-4, IGZO-5, IGZO-6) Ministry Higher Education Federation (Goszadaniye No. 075-03-2024-117, project FSMG-
Language: Английский
Citations
5