Enhancing the Memristor Performance through Tuning the Energy Bands of Hexahydroxy-Based Metal–Organic Framework Films DOI
Jiangyan Yuan, Yaru Song, Guangyuan Feng

et al.

ACS Applied Materials & Interfaces, Journal Year: 2025, Volume and Issue: unknown

Published: June 2, 2025

Precisely adjusting the energy band of metal-organic frameworks (MOFs) in resistive memory is a useful yet challenging method to manipulate resistance and ON/OFF ratio device. In this study, series new MOF films with tunable structure, high crystallinity, excellent self-supporting characteristics were obtained by changing different ligands metal ions. Using these as active layers, ITO/2D MOF/Al devices exhibit switching behavior: uniformity repeatability, durability, long retention characteristics. Changing ion species or organic ligand molecules can effectively regulate bands 2D films, so that device presents an adjustable window from 103 108, ITO/Co3(HPTT)2/Al higher than those reported based on inorganic materials such traditional chalcogenides transition oxides. The RS mechanism determined be conductive filament formed atomic-level displacement ions film, difference set voltage closely related injection barriers charge carrier.

Language: Английский

Recent Progress on Heterojunction‐Based Memristors and Artificial Synapses for Low‐Power Neural Morphological Computing DOI Open Access

Zhi‐Xiang Yin,

Hao Chen, Shuo Yin

et al.

Small, Journal Year: 2025, Volume and Issue: unknown

Published: March 19, 2025

Abstract Memristors and artificial synapses have attracted tremendous attention due to their promising potential for application in the field of neural morphological computing, but at same time, continuous optimization improvement energy consumption are also highly desirable. In recent years, it has been demonstrated that heterojunction is great significance improving memristors synapses. By optimizing material composition, interface characteristics, device structure heterojunctions, can be reduced, performance stability durability improved, providing strong support achieving low‐power computing systems. Herein, we review progress on heterojunction‐based by summarizing working mechanisms advances memristors, terms selection, design, fabrication techniques, strategies, etc. Then, applications neuromorphological deep learning introduced discussed. After that, remaining bottlenecks restricting development discussed detail. Finally, corresponding strategies overcome challenges proposed. We believe this may shed light high‐performance synapse devices.

Language: Английский

Citations

1

Emerging Artificial Synaptic Devices Based on Organic Semiconductors: Molecular Design, Structure and Applications DOI
Yunchao Xu, Yuan He, Dongyong Shan

et al.

ACS Applied Materials & Interfaces, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 9, 2025

In modern computing, the Von Neumann architecture faces challenges such as memory bottleneck, hindering efficient processing of large datasets and concurrent programs. Neuromorphic inspired by brain's architecture, emerges a promising alternative, offering unparalleled computational power while consuming less energy. Artificial synaptic devices play crucial role in this paradigm shift. Various material systems, from organic to inorganic, have been explored for neuromorphic devices, with materials attracting attention their excellent photoelectric properties, diverse choices, versatile preparation methods. Organic semiconductors, particular, offer advantages over transition-metal dichalcogenides, including ease flexibility, making them suitable large-area films. This review focuses on emerging artificial based discussing different branches within semiconductor system, various fabrication methods, device structure designs, applications synapse. Critical considerations achieving truly human-like dynamic perception systems semiconductors are also outlined, reflecting ongoing evolution computing.

Language: Английский

Citations

0

Enhancing the Memristor Performance through Tuning the Energy Bands of Hexahydroxy-Based Metal–Organic Framework Films DOI
Jiangyan Yuan, Yaru Song, Guangyuan Feng

et al.

ACS Applied Materials & Interfaces, Journal Year: 2025, Volume and Issue: unknown

Published: June 2, 2025

Precisely adjusting the energy band of metal-organic frameworks (MOFs) in resistive memory is a useful yet challenging method to manipulate resistance and ON/OFF ratio device. In this study, series new MOF films with tunable structure, high crystallinity, excellent self-supporting characteristics were obtained by changing different ligands metal ions. Using these as active layers, ITO/2D MOF/Al devices exhibit switching behavior: uniformity repeatability, durability, long retention characteristics. Changing ion species or organic ligand molecules can effectively regulate bands 2D films, so that device presents an adjustable window from 103 108, ITO/Co3(HPTT)2/Al higher than those reported based on inorganic materials such traditional chalcogenides transition oxides. The RS mechanism determined be conductive filament formed atomic-level displacement ions film, difference set voltage closely related injection barriers charge carrier.

Language: Английский

Citations

0