Analysis of the Electrical Properties of Dielectric Thin Films 0.2batio3 – 0.8bazr0.5ti0.5o3 on a Fluorine-Doped Tin Oxide Substrate DOI
Rahmi Dewi,

Siti Rahma Daulay,

Teguh P. Hadilala

et al.

Published: Jan. 1, 2023

Thin films of 0.2BaTiO3 – 0.8BaZr0.5Ti0.5O3 (BT-BZT) dielectric material find applications in various sensors, particularly capacitor manufacturing, due to their excellent electrical properties. Thus, this study aimed synthesize thin BT-BZT with varying annealing temperatures 700°C, 750°C, and 800°C. To achieve this, the sol-gel method was applied on a Fluorine-Doped Tin Oxide (FTO) substrate, chosen for its simplicity cost-effectiveness. Electrochemical properties were characterized using electrochemical impedance spectroscopy (EIS). The results revealed that highest constant obtained 411.5 at 700°C. This temperature exhibited lowest resistance compared other samples, resulting capacitance value 2.9×10-6 F. Therefore, it can be concluded significantly influenced values capacitor.

Language: Английский

Unveiling the potential of step-scheme and Type II photocatalysts in dinitrogen reduction to ammonia DOI
Yakubu Adekunle Alli, Funeka Matebese,

Soulaima Chkirida

et al.

The Science of The Total Environment, Journal Year: 2024, Volume and Issue: 957, P. 177903 - 177903

Published: Dec. 1, 2024

Language: Английский

Citations

2
Electrical Properties Analysis of Dielectric Thin Films 0.2BaTiO3 – 0.8BaZr0.5Ti0.5O3 on Fluorine Doped Tin Oxide Substrate DOI Creative Commons
Rahmi Dewi, Nursyafni Nursyafni,

Siti Rahma Daulay

et al.

Materials Research, Journal Year: 2024, Volume and Issue: 27

Published: Jan. 1, 2024

Ferroelectric thin films of 0.2BaTiO3 – 0.8BaZr0.5Ti0.5O3 (BT-BZT) are dielectric materials applied in various sensors, particularly capacitor manufacturing, due to their excellent electrical properties. This ferroelectric material also has a high constant value, such that it is suitable for use Random Access Memory (FeRAM) and microwaves. Therefore, this study aimed synthesize BT-BZT with annealing temperature variations 700 °C, 750 800 °C. To achieve this, the sol-gel method was Fluorine Doped Tin Oxide (FTO) substrate, selected technique its simplicity cost-effectiveness. The electrochemical properties were characterized using impedance spectroscopy (EIS). research results show at frequency 100 Hz, highest obtained 58975.43 resistance compared other samples. capacitance value 2.9 µF oC. concluded influenced values capacitor.

Language: Английский

Citations

0
Analysis of the Electrical Properties of Dielectric Thin Films 0.2batio3 – 0.8bazr0.5ti0.5o3 on a Fluorine-Doped Tin Oxide Substrate DOI
Rahmi Dewi,

Siti Rahma Daulay,

Teguh P. Hadilala

et al.

Published: Jan. 1, 2023

Thin films of 0.2BaTiO3 – 0.8BaZr0.5Ti0.5O3 (BT-BZT) dielectric material find applications in various sensors, particularly capacitor manufacturing, due to their excellent electrical properties. Thus, this study aimed synthesize thin BT-BZT with varying annealing temperatures 700°C, 750°C, and 800°C. To achieve this, the sol-gel method was applied on a Fluorine-Doped Tin Oxide (FTO) substrate, chosen for its simplicity cost-effectiveness. Electrochemical properties were characterized using electrochemical impedance spectroscopy (EIS). The results revealed that highest constant obtained 411.5 at 700°C. This temperature exhibited lowest resistance compared other samples, resulting capacitance value 2.9×10-6 F. Therefore, it can be concluded significantly influenced values capacitor.

Language: Английский

Citations

0