Near-infrared
(NIR)
light-emitting
diodes
(LED)
have
garnered
significant
research
attention
worldwide.
This
presents
a
novel
near-infrared
phosphor
doped
with
Pr3+
ions,
exhibiting
broad
NIR
emission
ranging
from
800
to
1100
nm.
Under
450
nm
excitation,
Li3Cs2Ba2B3P6O24:Pr3+
material
generates
bands
peaking
at
882
and
1038
However,
this
exhibits
relatively
lower
luminous
intensity.
Through
Eu2+
co-doping,
the
intensity
of
is
significantly
enhanced
due
energy
transfer.
Photoluminescence
spectra
luminescence
decay
curves
support
efficient
transfer
(ET)
between
Pr3+,
resulting
in
remarkable
luminescence.
The
study
evaluates
temperature
stability
practical
application
Li3Cs2Ba2B3P6O24:Eu2+,
LED
applications.
Consequently,
ions
emerge
as
an
alternative
emitter
though
Eu2+,
offering
new
insights
into
developing
light
sources
for
broadband
pc-LED
Abstract
The
performance
of
the
near‐infrared
phosphor‐converted
light‐emitting
diodes
(NIR
pc‐LEDs)
mainly
depends
on
NIR
emitting
phosphors
used.
Cr
3+
doped
materials
can
be
excited
by
blue
light
chips,
but
their
emission
is
located
in
NIR‐I
region
(650–1000
nm).
Ni
2+
are
NIR‐II
(1000–1700
nm),
they
cannot
effectively
chips.
Herein,
,
mono‐doped,
and
co‐doped
Sr
2
GaTaO
6
prepared
investigated.
ions
occupy
two
octahedral
sites
Ga
Ta
5+
.
co‐doping
has
achieved
breakthroughs.
One
to
shift
optimal
excitation
wavelength
from
violet
due
energy
transfer
(efficiency
up
70%)
other
achieve
broadband
continuous
across
regions
(650–1700
nm,
with
a
full
width
at
half
maximum
(FWHM)
410
nm
(173
+
237
nm)).
:
0.02Cr
0.01Ni
phosphor
combined
commercial
460
chip
realize
its
application
organic
compounds
identification,
night
vision,
biological
imaging.
This
work
points
out
direction
for
future
development
efficient
super
NIR‐emitting
phosphors.
Journal of Materials Chemistry C,
Journal Year:
2024,
Volume and Issue:
12(10), P. 3515 - 3525
Published: Jan. 1, 2024
In
this
work,
a
novel
NIR
phosphor
YGa
1.8
Al
1.2
(BO
3
)
4
:Cr
3+
was
synthesized.
By
designing
the
Cr
–Yb
energy
transfer,
efficient
SWIR
luminescence
with
simultaneously
high
IQE,
thermal
stability
and
output
power
achieved.