Physica Scripta,
Journal Year:
2023,
Volume and Issue:
98(11), P. 115525 - 115525
Published: Oct. 10, 2023
Abstract
Seed-mediated
growth,
a
straightforward
technique
with
low
reaction
temperature
and
cost,
was
used
to
create
multi-functional
core/shell
nanoparticles
(CdTe@FeOOH).
X-Ray
Diffraction
(XRD),
High-resolution
transmission
electron
microscopy
(HTEM),
Energy-dispersive
x-ray
(EDX),
Fourier-transform
infrared
techniques
(FT-IR),
Differential
Thermal
Analysis
(DTA)
were
utilized
study
the
structure
composition
of
as-prepared
CdTe@FeOOH
quantum
dots
(QDs).
Photoluminescence
(PL)
properties
(Core/Shell)
in
an
aqueous
solution
studied
by
steady-state
time-resolved
PL
spectroscopy.
The
lifetime
QDs
reduced
as
consequence
quenching.
This
results
transfer
mechanism
being
efficient,
which
reduces
electron–hole
recombination
core–shell
composite.
utilization
nanospheres
this
nature
presents
numerous
potentialities
for
applications
field
photocatalysis.
Indian Journal of Physics,
Journal Year:
2024,
Volume and Issue:
98(7), P. 2417 - 2427
Published: Feb. 1, 2024
Abstract
The
modified
aqueous
co-precipitation
approach
was
used
to
successfully
manufacture
magnesium
dititanate
(MgTi
2
O
5
)
nanoparticles.
Thermogravimetric
analysis/differential
scanning
calorimetry
(TG/DSC)
clearly
reveal
the
thermal
stability.
Moreover,
pseudobrookite
structure,
and
surface
morphology
of
MgTi
nanoparticles
were
determined
using
X-ray
diffraction
(XRD),
transmission
electron
microscope
(TEM),
Fourier-transform
infrared
(FT-IR),
(SEM)
techniques,
respectively.
average
size
crystallites
calculated
by
Scherer
compared
Williamson-Hall
TEM
images
results.
optical
band
gap
found
be
3.81
eV
for
direct
transitions.
effect
temperature
on
conductivity
DC
electricity
tested
between
rages
303–503
K.
data
antibacterial
activity
showed
that
antimicrobial
stopped
test
microorganisms
from
growing.
These
findings
revealed
will
extensively
promising
in
environmental
pollution
control
research.
Physica Scripta,
Journal Year:
2024,
Volume and Issue:
99(7), P. 075958 - 075958
Published: May 22, 2024
Abstract
Al/(Zn:Cd:Ni:TiO
2
)/p-Si
diodes
with
(4:2:2:2),
(5:2:2:1)
and
(6:4:4:0)
ratios
were
named
as
D1,
D2,
D3,
Al/(CdO:ZnO:NiO:Ti)/p-Si
of
D4,
D5
D6,
respectively.
The
functional
interlayer
was
deposited
via
sol-gel
spin
coating
method
to
develop
new
diodes/structures.
Whereas
the
Ln(I)–V
plot
shows
two
linear
sections
for
structures,
D2
D6
revealed
only
one
section
in
forward-bias
voltages.
Therefore,
structures
found
exhibit
two-exponential
or
two-parallel
diode
behavior
literature.
main
electric
parameters
such
zero-bias
barrier
height,
BH,
(Φ
bo
),
ideality
factor
(n),
reverse
saturation-current
(I
s
I
o
)),
rectification
ratio
at
±4.5
V,
series
resistance
(R
)
shunt
sh
extracted
from
current-voltage
(I-V)
measurements.
number
surface
sates
(N
ss
their
energy
distribution
obtained
using
I-V
data
by
considering
voltage
dependence
n
Φ
each
diode.
capacitance/conductance-voltage
(C/G–V)
plots
1
MHz
used
extracting
some
other
basic
electrical
parameters.
comparison
all
experimental
results
suggests
that
D1
D3
have
good
performance
terms
lower
leakage
current,
N
higher
RR
so
could
be
successfully
instead
conventional
metal/insulator/semiconductor
(MIS)
structures.
Radiation effects and defects in solids,
Journal Year:
2024,
Volume and Issue:
unknown, P. 1 - 14
Published: July 25, 2024
Radiation-hardness
of
silicon
(Si)
has
been
the
subject
interest
due
to
damage
material-based
detectors
during
and
after
operation.
In
this
work,
effects
4
MeV
proton-irradiation
on
electrical
properties
devices
fabricated
undoped
Fe-doped
p-Si
were
investigated
using
current-voltage
(I-V)
capacitance-voltage
(C-V)
techniques.
A
decrease
in
current
capacitance
is
less
pronounced
conduction
mechanism
remains
unchanged
diode
proton-irradiation.
This
insignificant
change
parameters
indicates
suppression
radiation
effect
by
Fe
Si.
The
are
dependent
incident
radiation,
because
possible
prevention
further
dislodgement
atoms
radiation.
As
a
result,
material
becomes
resistant
damage,
making
independent
result
ohmic
behaviour
displayed
Si
diode,
it
that
Si,
responsible
for
generation-recombination
(g-r)
centres,
which
defect
levels
positioned
at
middle
energy
gap
possibility
these
defects
being
explained
promising
dopant
improve
radiation-hardness
