Cited by Fe doped NiO nanostructures-based gas sensor for selective detection of triethylamine and xylene

Next-Generation Ni-Doped CoFe2O4@SiO2-NH2-Gallic acid Nanocomposites: Synergistic Effects of Functionalization for Advanced Dye Removal and Antibacterial Applications DOI

Zahraa S. Tahseen,

Baref Zahir Rashid,

Shahla H. Ali

et al.

Journal of Hazardous Materials Advances, Journal Year: 2025, Volume and Issue: unknown, P. 100686 - 100686

Published: March 1, 2025

Language: Английский

Citations

Improving the performance of Al/MgO/NiO Schottky-barrier photodetectors using a MgO intermediate layer with introduced oxygen DOI

Jun-Dar Hwang,

Nai-Hao Jheng

Sensors and Actuators A Physical, Journal Year: 2025, Volume and Issue: unknown, P. 116561 - 116561

Published: April 1, 2025

Language: Английский

Citations

Plasmonic Ag-decorated GaN for efficient photothermal CO2 conversion DOI

Xiaodong Hao,

Jiaming Wu,

X. Z. Cai

et al.

Applied Catalysis B Environment and Energy, Journal Year: 2025, Volume and Issue: 373, P. 125366 - 125366

Published: April 14, 2025

Language: Английский

Citations

Polycrystalline Diamond Film Growth on Gallium Nitride with Low Boundary Thermal Resistance DOI

Ying Wang, Jiahao Yao, Yong Yang

et al.

Coatings, Journal Year: 2024, Volume and Issue: 14(11), P. 1457 - 1457

Published: Nov. 15, 2024

As the demand for high-frequency and high-power electronic devices has increased, gallium nitride (GaN), particularly in context of high-electron mobility transistors (HEMTs), attracted considerable attention. However, ‘self-heating effect’ GaN HEMTs represents a significant limitation regarding both performance reliability. Diamond, renowned its exceptional thermal conductivity, an optimal material management HEMTs. This paper proposes novel method directly depositing diamond films onto N-polar (NP-GaN) epitaxial layers. eliminates complexities traditional growth process need temporary substrate steps. Given relative lag development technologies, which are marked by surface roughness issues, recognition that boundary resistance (TBRGaN/diamond) critical factor constraining efficient heat transfer, our study introduced series optimizations to enhance quality nucleation layer while ensuring integrity buffer remains intact. Moreover, chemical mechanical polishing (CMP) technology was employed effectively reduce NP-GaN base, thereby providing more favorable foundation growth. The optimization trends observed test results encouraging. Integrating highly smooth layers demonstrates reduction TBRGaN/diamond compared deposited with higher had undergone no prior treatment.

Language: Английский

Citations

Persistent luminescence nanomaterials with up-/down-conversion modes for power battery temperature measurement DOI

Shiji Liu,

Tianqi Zhao,

Renagul Abdurahman

et al.

Journal of Alloys and Compounds, Journal Year: 2024, Volume and Issue: unknown, P. 177815 - 177815

Published: Nov. 1, 2024

Language: Английский

Citations

GaN radiofrequency components and power amplifiers for next-generation 5G communications DOI

Muhammad Yaseen, Fayu Wan,

Fareeha Siddique

et al.

Microelectronic Engineering, Journal Year: 2024, Volume and Issue: 297, P. 112305 - 112305

Published: Dec. 16, 2024

Language: Английский

Citations

Ti3C2 quantum dots decorated BiVO4 photoelectrode for both photoelectrochemical water splitting and H2O2 determination DOI

Quan Li,

Xiaolan Cui,

Xin Liu

et al.

Journal of Alloys and Compounds, Journal Year: 2024, Volume and Issue: 1011, P. 178399 - 178399

Published: Dec. 31, 2024

Language: Английский

Citations

Fe doped NiO nanostructures-based gas sensor for selective detection of triethylamine and xylene DOI

Qi Zhao, Siqi Yang, Zihan Liu

et al.

New Journal of Chemistry, Journal Year: 2024, Volume and Issue: 49(3), P. 825 - 832

Published: Dec. 5, 2024

The real-time detection of noxious gases such as triethylamine (TEA) and xylene is important for human environmental safety.

Language: Английский

Citations