Partial Substitution of Copper with Silver in Cu₂ZnSnS₄: An Efficient Strategy to Boost the Performance of Self-Powered Broadband Photodetectors in Superstrate Configuration

ACS Applied Materials & Interfaces, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 8, 2025

Self-powered broadband photodetectors (SPBPDs) hold great potential for next-generation optoelectronic applications, but their performance is often limited by interface defects that impair charge transport and increase recombination losses. In this work, we report the enhancement of photodetection efficiency SPBPDs partially substituting copper (Cu) with silver (Ag) in kesterite Cu2ZnSnS4 (ACZTS) thin films. Varying Ag concentrations (0%, 2%, 4%, 6%) are incorporated into CZTS layer, forming a TiO2/ACZTS heterojunction superstrate configuration fabricated via low-cost sol–gel spin-coating technique low-temperature open air annealing avoiding conventional postdeposition sulfurization or selenization. Photodetection varied significantly content where optimal observed 4% doping. Under simulated solar spectrum (100 mW/cm2), TiO2/4% ACZTS device demonstrates superior an ON/OFF ratio 6.0 × 102, photoresponsivity 0.42 mA/W, detectivity about 2.5 109 Jones. contrast, under 405 nm incident radiation, improves significantly, achieving approximately 4.6 103, around 63.9 4.8 1011 Jones which highest reported values CZTS-based single-junction without crystalline silicon wafer. doping effectively reduces enhances carrier dynamics, as evidenced capacitance–voltage (C–V) drive-level capacitance profiling (DLCP) measurements heterojunction. This approach offers novel strategy enhancing SPBPD through partial cation substitution, paving way advanced diverse applications.

Language: Английский

Self‐Rectifying Enhanced Bipolar Resistive Switching Mechanism in Cu₂ZnSiS₄ Thin Films: The Impact of Porous Grain Boundaries

physica status solidi (RRL) - Rapid Research Letters, Journal Year: 2025, Volume and Issue: unknown

Published: March 13, 2025

Resistive switching (RS) behavior in kesterite‐based materials has garnered significant attention for its potential nonvolatile memory applications. This work investigates the RS properties of Cu 2 ZnSnS 4 (CZTS) and ZnSiS (CZSiS) thin films applications resistive devices. By substituting Sn with Si CZTS, CZSiS is developed which a material composed Earth‐abundant nontoxic elements, performance CZTS compared. Both are fabricated as metal–semiconductor junctions, demonstrating superior characteristics, including high ratio (≈1725) stable endurance up to 150 cycles. Impedance spectroscopy cyclic I–V analysis reveal that enhanced attributed efficient formation conducting filaments intergrain regions. The findings suggest promising candidate low‐cost, high‐performance

Language: Английский