Influence of metalloid elements (Ge, As and In) on the electronic and optical properties of GaN semiconductor: A first-principles investigation DOI
Tianrun Zheng

Journal of Physics and Chemistry of Solids, Journal Year: 2025, Volume and Issue: 201, P. 112636 - 112636

Published: Feb. 17, 2025

Language: Английский

Transition metal improved the dehydrogenated capacity, electronic and optical properties of the layered V2C MXene for hydrogen evolution reaction DOI
Yong Pan,

Jiahao Gao

Surfaces and Interfaces, Journal Year: 2025, Volume and Issue: unknown, P. 106185 - 106185

Published: March 1, 2025

Language: Английский

Citations

0
New insight into the structural, hydrogen storage capacity, dehydrogenated mechanism and physical properties of Alkali metal AMAlH4 hydrides DOI
Yong Pan, Yunfeng Zhu

Journal of Alloys and Compounds, Journal Year: 2025, Volume and Issue: 1021, P. 179661 - 179661

Published: March 10, 2025

Language: Английский

Citations

0
Exploring the structure, hydrogen storage capacity and hydrogen storage mechanism of X3N3H6 hydrides for hydrogen storage DOI

Jiahao Gao,

Yong Pan,

I.P. Jain

et al.

Applied Materials Today, Journal Year: 2025, Volume and Issue: 44, P. 102755 - 102755

Published: May 1, 2025

Language: Английский

Citations

0
Energy Band Modulation and Solar‐Blind Photoresponse Extension Based on (SnxGa1−x)2O3 DOI
Chao Ji,

Jin-Yi Pan,

Jun Yang

et al.

physica status solidi (RRL) - Rapid Research Letters, Journal Year: 2025, Volume and Issue: unknown

Published: May 1, 2025

Ultrawide‐bandgap gallium oxide (Ga 2 O 3 ) is capable of filtering out visible light and selectively responding to the solar‐blind ultraviolet light. However, excessively wide bandgap results in a relatively narrow detection range, which limits operational spectrum device. The intentional introduction other elements modulate energy band Ga can effectively expand its range. Among these, Sn considered an ideal exotic atom due similar electronic structure atomic radius Ga, as well lower activation energy. Here, we prepared (Sn x 1− films by using plasma‐enhanced chemical vapor deposition. As content increases, absorption edge gradually shifts from 254 373 nm corresponding optical significantly decreases 4.92 3.32 eV. Additionally, changes calculated based on first‐principles calculations are consistent with experimental results. Furthermore, characterization confirms that increases concentration oxygen vacancies, photocurrent photodetectors being increased six orders magnitude compared intrinsic devices. This work proposes new approach for realization high performance detectors response

Language: Английский

Citations

0
Exploring the hydrogen storage capacity, dehydrogenated mechanism, electronic and optical properties of AMMgH3 hydrides for hydrogen storage DOI

Yong Pan,

Jiahao Gao

Journal of Energy Storage, Journal Year: 2025, Volume and Issue: 124, P. 116869 - 116869

Published: May 2, 2025

Language: Английский

Citations

0
Influence of metalloid elements (Ge, As and In) on the electronic and optical properties of GaN semiconductor: A first-principles investigation DOI
Tianrun Zheng

Journal of Physics and Chemistry of Solids, Journal Year: 2025, Volume and Issue: 201, P. 112636 - 112636

Published: Feb. 17, 2025

Language: Английский

Citations

0