Micromachines,
Journal Year:
2024,
Volume and Issue:
15(12), P. 1519 - 1519
Published: Dec. 20, 2024
Insulated
gate
bipolar
transistors
(IGBTs),
as
an
important
power
semiconductor
device,
are
susceptible
to
thermal
stress,
fatigue,
and
mechanical
stresses
under
high-voltage,
high-current,
high-power
conditions.
Elevated
heat
dissipation
within
the
module
leads
fluctuating
rises
in
temperature
that
accelerate
its
own
degradation
failure,
ultimately
causing
damage
a
whole
posing
threat
operator
safety.
Through
ANSYS
Workbench
simulation
analysis,
it
is
possible
accurately
predict
distribution,
equivalent
strain
of
solder
materials
actual
working
conditions,
thus
revealing
changing
laws
heat–mechanical
interaction
materials.
Simulation
analysis
results
show
that,
steady-state
operating
highest
point
IGBT
module’s
overall
junction
occurs
center
chip.
Nanogold
exhibited
best
performance
terms
stress-strain
among
five
solders
studied
this
paper;
defects
near
edges
caused
greater
harm
compared
those
closer
layer’s
center.
In
located
edge
corners
produced
larger
strains.
Crazing
joints
allows
for
faster
transfer
sources
away
from
center;
crazing
has
fewer
detrimental
effects
on
integrity
through
cracks.
can
model
equipment
realistic
work
comparing
evaluating
different
types
select
most
suitable
material
product
design
selection.
This
aids
enhancing
precision
reliability.
Advanced Functional Materials,
Journal Year:
2024,
Volume and Issue:
34(19)
Published: Jan. 9, 2024
Abstract
The
trends
of
miniaturization,
lightweight,
and
high
integration
in
electronics
have
brought
serious
issues
heat
dissipation
electromagnetic
compatibility
also
limited
the
simultaneous
use
thermally
conductive
microwave
absorption
materials.
Therefore,
it
is
imperative
to
design
materials
that
possess
those
dual
functions.
In
this
work,
one‐pot
method
used
anchor
zeolitic
imidazolate
framework
ZIF‐67
coated
with
polydopamine
(PDA)
on
boron
nitride
(BN)
obtain
BN@ZIF‐67@PDA.
pyrolysis
product
BN@Co‐C@C
as
heterostructured
conductive/microwave
fillers
blended
polyethylene
terephthalate
(PET)
prepare
BN@Co‐C@C/PET
composites.
When
mass
ratio
BN
ZIF‐67@PDA
7.5:1
fraction
7.5
@Co‐C@C
45
wt%,
@Co‐C@C/PET
composites
exhibit
excellent
thermal
conductivities
performances.
conductivity
coefficient
5.37
W
m
−1
K
,
which
35.8
times
higher
than
PET
(0.15
),
wt%
(BN
/Co‐C@C)/PET
(4.03
)
prepared
by
directly
mixing.
minimum
reflection
loss
are
−63.1
dB
at
4.72
GHz,
corresponding
effective
bandwidth
1.28
GHz
(4.08–5.36
GHz),
achieving
performance
C
band.
ACS Applied Nano Materials,
Journal Year:
2024,
Volume and Issue:
7(6), P. 5761 - 5775
Published: March 1, 2024
Molybdenum
disulfide
(MoS2),
as
a
two-dimensional
material,
has
potential
application
prospect
in
microwave
absorption,
electromagnetic
shielding,
energy
storage,
electrochemistry,
and
other
fields
due
to
its
unique
structure,
excellent
electrical
conductivity,
abundant
surface
area,
good
mechanical
strength.
In
this
paper,
the
absorbing
properties
of
MoS2-based
composites
are
reviewed
objectively,
recent
research
achievements
progress
dielectric
loss
type
magnetic
summarized.
Then,
absorption
mechanism
is
systematically
analyzed
terms
loss.
At
same
time,
materials
current
social
needs
summarized
including
military
radar
stealth
civil
electronic
communication.
addition,
challenges
bottlenecks
future
development
absorber
also
presented.
Advanced Functional Materials,
Journal Year:
2025,
Volume and Issue:
unknown
Published: May 22, 2025
Abstract
The
high‐power‐density
and
high‐temperature
operation
of
third‐generation
power
semiconductor
devices
(e.g.,
SiC/GaN)
is
limited
by
epoxy
resin
(EP)‐based
packaging
materials
due
to
three
key
challenges:
(1)
Low
thermal
conductivity
brings
heat
accumulation;
(2)
High
interfacial
stress
from
the
≈
20
times
higher
expansion
coefficient
EP
versus
SiC/GaN
causes
cycling‐induced
interfacecracks,
significant
performance
or
lifespan
degradation
even
device
failure;
(3)
flammable
nature
enhances
risk
factor
caused
runaway.
Herein,
a
thermal‐expansion
offset
flame
retardant
Zn
1.5
Cu
0.5
P
2
O
7
(ZCPO)
design
with
negative
‐20
×
10
−6
/
°C,
within
temperature
ranges
∼
190
which
enables
achieve
ceramic‐like
(4
°C)
UL‐94
V‐0
rating
retardancy
in
ZCPO/EP‐61
composite
for
first
time.
perfectly
matched
minimizes
between
chips
thermoelectric
cooler,
thus
simple
cooling
architecture
designed
without
interface
material
(TIM2),
26.85
8
°C
lower
than
that
TIM2
(18.89
°C).
