Micromachines,
Journal Year:
2024,
Volume and Issue:
15(12), P. 1519 - 1519
Published: Dec. 20, 2024
Insulated
gate
bipolar
transistors
(IGBTs),
as
an
important
power
semiconductor
device,
are
susceptible
to
thermal
stress,
fatigue,
and
mechanical
stresses
under
high-voltage,
high-current,
high-power
conditions.
Elevated
heat
dissipation
within
the
module
leads
fluctuating
rises
in
temperature
that
accelerate
its
own
degradation
failure,
ultimately
causing
damage
a
whole
posing
threat
operator
safety.
Through
ANSYS
Workbench
simulation
analysis,
it
is
possible
accurately
predict
distribution,
equivalent
strain
of
solder
materials
actual
working
conditions,
thus
revealing
changing
laws
heat–mechanical
interaction
materials.
Simulation
analysis
results
show
that,
steady-state
operating
highest
point
IGBT
module’s
overall
junction
occurs
center
chip.
Nanogold
exhibited
best
performance
terms
stress-strain
among
five
solders
studied
this
paper;
defects
near
edges
caused
greater
harm
compared
those
closer
layer’s
center.
In
located
edge
corners
produced
larger
strains.
Crazing
joints
allows
for
faster
transfer
sources
away
from
center;
crazing
has
fewer
detrimental
effects
on
integrity
through
cracks.
can
model
equipment
realistic
work
comparing
evaluating
different
types
select
most
suitable
material
product
design
selection.
This
aids
enhancing
precision
reliability.
Macromolecular Rapid Communications,
Journal Year:
2024,
Volume and Issue:
45(22)
Published: Aug. 13, 2024
With
the
widespread
application
of
highly
integrated
electronic
devices,
urgent
development
multifunctional
polymer-based
composite
materials
with
high
electromagnetic
interference
shielding
effectiveness
(EMI
SE)
and
thermal
conductivity
capabilities
is
critically
essential.
Herein,
a
graphene/carbon
felt/polyimide
(GCF/PI)
prepared
through
constructing
3D
van
der
Waals
heterostructure
by
heating
carbon
felt
graphene
at
temperature.
The
GCF-3/PI
exhibits
highest
through-plane
1.31
W·m
Journal of Applied Physics,
Journal Year:
2024,
Volume and Issue:
136(16)
Published: Oct. 22, 2024
Alumina
substrates
are
increasingly
used
for
high-power
integrated
circuits
due
to
their
high
thermal
conductivity,
low
expansion
coefficient,
and
excellent
insulation
properties.
However,
pores
in
the
green
tape
from
casting
process
reduce
conductivity
permittivity
of
sintered
ceramic
substrate.
Researchers
have
attempted
minimize
porosity
with
chemical
additives
or
by
sintering
pure
alumina
at
temperatures
above
1650
°C,
but
these
methods
often
degrade
quality
substrate
evenness.
This
study
proposes
a
low-cost
casting-warm
pressing
densify
using
micro–nano-mixed
powders
relatively
temperatures.
The
results
indicate
that
relative
density
prepared
1500
°C
is
93%,
4.4%
improvement
over
process.
Additionally,
reaches
15.89
W/(m
K),
which
1.4
times
higher
than
Microstructure
analysis
shows
micro-
nano-multi-scale
mixed
forms
novel
conduction
enhancement
mechanism.
Large
particles
overlap,
while
small
fill
spaces
between
large
particles.
connected
micrometer-sized
particle
skeletons
form
net
channels
substrate,
improving
heat
transfer.
Journal of Applied Polymer Science,
Journal Year:
2024,
Volume and Issue:
142(11)
Published: Dec. 17, 2024
ABSTRACT
Low‐temperature
cured
epoxy
resin
(EP)
is
a
suitable
system
for
bonding
thermal
and
temperature‐sensitive
devices,
which
can
also
reduce
energy
consumption
production
costs.
In
order
to
further
broaden
the
application
range
of
low‐temperature
curing
EP
systems
in
amine‐sensitive
environments,
addition
selecting
well‐compatible
agent,
an
effective
rubber
form
three‐dimensional
network
structure
with
matrix,
so
as
significantly
improve
toughness
EP.
this
work,
two
kinds
triblock
liquid
hydroxy‐terminated
polypropylene
glycol‐polybutadiene‐polypropylene
glycol
(HTPO‐PB‐PO)
polyphenylethylene
oxide‐polybutadiene‐polyphenylethylene
oxide
(HTSO‐PB‐SO)
controlled
molecular
weight
are
synthesized
adopted
mechanical
properties
methyl
hexahydro
phthalic
anhydride
(MEHHPA).
It
found
that
all
rubber‐modified
be
below
100°C,
mechanism
similar
pure
system.
Compared
original
EP,
impact
resistance
modified
samples
improved,
glass
transition
temperature
(
T
g
)
similar,
among
best
strength
reach
16.22
kJ/m
2
,
62.7%
higher
than
sample
only
slightly
reduced
decomposition
temperature.
These
results
provide
material
excellent
properties,
high
dimensional
accuracy,
heat
environments
while
reducing
costs
due
high‐temperature
components
consumption.
Micromachines,
Journal Year:
2024,
Volume and Issue:
15(12), P. 1519 - 1519
Published: Dec. 20, 2024
Insulated
gate
bipolar
transistors
(IGBTs),
as
an
important
power
semiconductor
device,
are
susceptible
to
thermal
stress,
fatigue,
and
mechanical
stresses
under
high-voltage,
high-current,
high-power
conditions.
Elevated
heat
dissipation
within
the
module
leads
fluctuating
rises
in
temperature
that
accelerate
its
own
degradation
failure,
ultimately
causing
damage
a
whole
posing
threat
operator
safety.
Through
ANSYS
Workbench
simulation
analysis,
it
is
possible
accurately
predict
distribution,
equivalent
strain
of
solder
materials
actual
working
conditions,
thus
revealing
changing
laws
heat–mechanical
interaction
materials.
Simulation
analysis
results
show
that,
steady-state
operating
highest
point
IGBT
module’s
overall
junction
occurs
center
chip.
Nanogold
exhibited
best
performance
terms
stress-strain
among
five
solders
studied
this
paper;
defects
near
edges
caused
greater
harm
compared
those
closer
layer’s
center.
In
located
edge
corners
produced
larger
strains.
Crazing
joints
allows
for
faster
transfer
sources
away
from
center;
crazing
has
fewer
detrimental
effects
on
integrity
through
cracks.
can
model
equipment
realistic
work
comparing
evaluating
different
types
select
most
suitable
material
product
design
selection.
This
aids
enhancing
precision
reliability.
