2D MXenes: Synthesis, Properties, and Applications in Silicon‐Based Optoelectronic Devices

Small, Journal Year: 2025, Volume and Issue: 21(9)

Published: Jan. 16, 2025

Abstract MXenes, a rapidly emerging class of 2D transition metal carbides, nitrides, and carbonitrides, have attracted significant attention for their outstanding properties, including high electrical conductivity, tunable work function, solution processability. These characteristics made MXenes highly versatile widely adopted in the next generation optoelectronic devices, such as perovskite organic solar cells. However, integration into silicon‐based devices remains relatively underexplored, despite silicon's dominance semiconductor industry. In this review, timely summary recent progress utilizing Ti‐based particularly Ti 3 C 2 T x , is provided. The composition, synthesis methods, key properties that contribute to potential enhanced device performance are focused on. Furthermore, latest advancements MXene applications cells photodetectors discussed from fundamental applied perspectives. Finally, challenges future opportunities outlined.

Language: Английский

Multifunctional Optimization of MXene for Enhanced Comprehensive Performance of Crystal Silicon‐MXene Back‐Heterojunction Solar Cells

Small, Journal Year: 2024, Volume and Issue: unknown

Published: Dec. 19, 2024

Abstract Enhancing the cost‐performance ratio is a fundamental objective for advancement of photovoltaic sector. In this context, development innovative solar cells that offer straightforward device configuration but high performance arguably most crucial element. Herein, an undoped back‐heterojunction crystalline silicon (c‐Si) cell endeavored to be crafted by simply drop‐casting Ti 3 C 2 T x MXene ethanol colloidal solution onto backside n ‐type c‐Si ( ‐Si) wafer. Leveraging good electrical property and stability, as well adjustable work function treated europium trifluoromethanesulfonate (Eu(OTF) ), elementary Ag/ZnO/ ‐Si/MXene/Ag delivers impressive power conversion efficiency (PCE) 12.5%. Moreover, deposition SiO passivation layer through simple self‐developed electrochemical method increases PCE further 13.5% ameliorating interfacial contact between ‐Si. unencapsulated exhibits improved compared control without Eu(OTF) treatment passivation.

Language: Английский