Materials Research Bulletin, Journal Year: 2024, Volume and Issue: 180, P. 112983 - 112983
Published: July 3, 2024
Language: Английский
Materials Research Bulletin, Journal Year: 2024, Volume and Issue: 180, P. 112983 - 112983
Published: July 3, 2024
Language: Английский
InfoMat, Journal Year: 2024, Volume and Issue: 6(5)
Published: March 28, 2024
Abstract Near‐infrared (NIR) luminescent metal halide (LMH) materials have attracted great attention in various optoelectronic applications due to their low‐temperature solution‐processable synthesis, abundant crystallographic/electronic structures, and unique properties. However, some challenges still remain luminescence design, performance improvement, application assignments. This review systematically summarizes the development of NIR LMHs through classifying origins into four major categories: band‐edge emission, self‐trapped exciton (STE) ion defect‐related emission. The mechanisms different types are discussed detail by analyzing typical examples. Reasonable strategies for designing optimizing luminescence/optoelectronic properties summarized, including bandgap engineering, self‐trapping state chemical composition modification, energy transfer, other auxiliary such as improvement synthesis scheme post‐processing. Furthermore, prospects based on devices revealed, phosphor‐converted light‐emitting diodes (LEDs), electroluminescent LEDs, photodetectors, solar cells, x‐ray scintillators, well demonstrations related practical applications. Finally, existing future perspectives LMH critically proposed. aims provide general understanding guidance design high‐performance materials. image
Language: Английский
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