Computational Study of Chalcogenide-Based Perovskite Solar Cell Using SCAPS-1D Numerical Simulator

Materials, Journal Year: 2025, Volume and Issue: 18(1), P. 186 - 186

Published: Jan. 4, 2025

Perovskite solar cells (PSCs) are regarded as extremely efficient and have significant potential for upcoming photovoltaic technologies due to their excellent optoelectronic properties. However, a few obstacles, which include the instability high costs of production lead-based PSCs, hinder commercialization. In this study, performance cell with configuration FTO/CdS/BaZrS3/HTL/Ir was optimized by varying thickness perovskite layer, hole transport temperature, electron layer (ETL)’s defect density, absorber energy band, work function back contact. Various layers (HTLs), including Cu2O, CuSCN, P3HT, PEDOT:PSS, were assessed select best materials that would achieve stability in PSC devices. At optimal levels, PEDOT:PSS reached maximum power conversion efficiency (PCE) 18.50%, while Cu2O exhibited PCE 5.81, 10.73, 9.80%, respectively. The attributed better band alignment between and, thus, low recombination photogenerated charges. other parameters device short-circuit current density (Jsc) 23.46 mA cm−2, an open-circuit voltage (Voc) 8.86 (V), fill factor (FF) 8.90%. This study highlights chalcogenide-based PSCs stable alternative traditional cells, successful optimization paving way future research on eco-friendly scalable methods.

Language: Английский

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Numerical simulation of a highly efficient perovskite solar cell based on FeSi₂ photoactive layer

Nano Select, Journal Year: 2024, Volume and Issue: 5(9)

Published: May 5, 2024

Abstract The primary aim of this work is to investigate the use iron di‐silicide (FeSi 2 ) as a photoactive layer in order achieve superior performance solar cell architecture—ITO/TiO /FeSi /CuSCN/Ni. optimum thickness absorber was found be 1000 nm, which gave optimal properties proposed cell—a short‐circuit current density ( J sc 51.41 mAm −2 , an open‐circuit voltage V oc 0.93 V, fill factor (FF) 77.99%, and power conversion efficiency (PCE) 37.17%. introduction ultrathin interfacial between electron transport (ETL), perovskite interface, hole (HTL) enhanced electrical output cell. increased 51.86 mAcm rose 0.97 while FF PCE 82.86% 41.84%, respectively. Accordingly, architecture promising can introduced into manufacturing workflow for commercial applications. Moreover, because its exceptional photon absorption capabilities, FeSi potentially excellent material fabrication. detailed findings study have therefore indicated that high‐performance ‐based achieved future.

Language: Английский

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Advancements in device modelling and impedance analysis of a high performance disilicide (FeSi2)-based perovskite solar cell

Renewable Energy, Journal Year: 2025, Volume and Issue: unknown, P. 122365 - 122365

Published: Jan. 1, 2025

Language: Английский

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Numerical simulation and performance optimization of a solid-state dye-sensitized solar cell with iridium counter electrode

Results in Surfaces and Interfaces, Journal Year: 2025, Volume and Issue: unknown, P. 100432 - 100432

Published: Jan. 1, 2025

Language: Английский

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Performance optimization of a novel perovskite solar cell with power conversion efficiency exceeding 37% based on methylammonium tin iodide

Next Energy, Journal Year: 2024, Volume and Issue: 6, P. 100182 - 100182

Published: Sept. 3, 2024

Language: Английский

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Numerical simulation of a novel high performance solid‐state dye‐sensitised solar cell based on N719 dye

IET Optoelectronics, Journal Year: 2024, Volume and Issue: 18(4), P. 96 - 120

Published: June 6, 2024

Abstract Among the emerging photovoltaic technologies, solid‐state dye‐sensitised solar cells (ssDSSCs) have attracted considerable interest due to their cost‐effective production, adjustable characteristics, and potential for lightweight flexible applications. Nevertheless, achieving efficiencies comparable established such as perovskite silicon‐based devices, proven challenging. Herein, device structure, Pt/PEDOT: PSS/N719 dye/PC 61 BM/ITO is investigated theoretically using cell capacitance simulator (SCAPS‐1D). Groundbreaking advancement introduced in ssDSSC design, remarkable theoretical power conversion efficiency of 20.73%, surpassing performance reported traditional dye‐based technologies. The model demonstrates an exceptional Fill factor 86.64%, indicating efficient current collection; along with a modest short‐circuit density ( J sc ) 22.38 mA/cm 2 impressive open‐circuit voltage V oc 1.0691 V, highlighting light absorption charge separation. Mott–Schottky analysis parasitic resistances (series shunt) been thoroughly discussed. Despite fact that only numerical simulation involved, proposed ssDSSCs structure gives insights into fabrication highly can be injected production workflow order advance technology DSSC.

Language: Английский

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Recent Advancement in Development of Nitrogen-Doped CQDs for Dye Sensitized Solar Cell and Photodetector. A review

Surfaces and Interfaces, Journal Year: 2025, Volume and Issue: unknown, P. 105913 - 105913

Published: Jan. 1, 2025

Language: Английский

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Enhancing Performance of Hole Transport Layer-Free Carbon-Based Organic-inorganic Halide Perovskite Solar Cells with Tuning Guanidinium Thiocyanate Through Additive Engineering

Optical Materials, Journal Year: 2025, Volume and Issue: 160, P. 116758 - 116758

Published: Feb. 1, 2025

Language: Английский

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Numerical Simulation and Hole Transport Layers Optimization of a Lead Sulfide-Based Solar Cell with a Power Conversion Efficiency of Above 22%

Coatings, Journal Year: 2025, Volume and Issue: 15(3), P. 255 - 255

Published: Feb. 20, 2025

Recently, the numerical simulation of solar cells has attracted tantamount scientific attention in photovoltaic community because it saves on research time and resources before actual fabrication devices laboratories. Despite significant advancements quantum dot-sensitized (QDSSCs), power conversion efficiency (PCE) is still low when compared to other such as perovskite. This gap poses a substantial challenge harnessing full potential QDSSCs for widespread adoption renewable energy applications. Enhancing imperative their commercial viability deployment. In this work, SCAPS-1D was used QDSSCs. The cell with general configuration FTO/TiO2/PbS/HTL/Au investigated. device, PbS dots were inserted absorber layer, TiO2 electron transport layer (ETL), gold back contact, following inorganic materials, i.e., copper (I) iodide (CuI), oxide (Cu2O), cadmium zinc telluride selenide (CZTSe), iron tin sulfide (CFTS), (CZTSSe) tested HTL FTO acted conductive substrate. best material exhibited PCE 22.61%, fill factor (FF) 84.67%, an open circuit voltage (Voc) 0.753 V, current density (Jsc) 35.48 mA cm−2. study contributes field by employing simulations optimize QDSSCs, exploring novel materials these identifying CZTSSe promising low-cost that significantly enhances both performance

Language: Английский

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The Numerical Simulation of a Non-Fullerene Thin-Film Organic Solar Cell with Cu2FeSnS4 (CFTS) Kesterite as a Hole Transport Layer Using SCAPS-1D

Coatings, Journal Year: 2025, Volume and Issue: 15(3), P. 266 - 266

Published: Feb. 23, 2025

Global warming and environmental pollution due to the overuse exploitation of fossil fuels are main issues affecting humans’ well-being. Solar energy is considered be one most promising candidates for providing human society with a clean sustainable supply. Thin-film organic solar cells (TFOSCs) use semiconductors as light-absorbing layer materials. TFOSCs have attracted wide research interest several advantages, such easy fabrication, affordability, light weight, friendliness. Over years, been dominated by donor–acceptor blends based on polymer donors fullerene acceptors. However, new class non-fullerene acceptors (NFAs) has gained prominence in owing their significant improvement power conversion efficiency (PCE) non-fullerene-based devices. In this study, One-Dimensional Cell Capacitance Simulator (SCAPS-1D) numerical simulator was used study performance device configuration FTO/PDINO/PBDB-T/ITIC/CFTS/Al. Here, PBDB-T/ITIC blend represents poly[(2,6-(4,8-bis(5-(2 ethylhexyl)thiophen-2-yl)benzo [1,2-b:4,5-b]dithiophene)-co-(1,3-di(5-thiophene-2-yl)-5,7-bis(2-ethylhexyl)benzo [1,2-c:4,5-c]dithiophene-4,8-dione)] (PBDB)/3,9-bis(2-methylene-(3-(1,1-dicyanomethylene)-indanone)-5,5,11,11-tetraki(4-hexylphenyl)-dithieno[2,3-d:2,3-d]-s-indaceno [1,2-b:5,6-b]dithiophene) (ITIC) acceptor (NFA) serves absorber layer. The electron transport (ETL) 2,9-Bis[3-(dimethyloxidoamino)propyl]anthra[2,1,9-def:6,5,10-d’e’f’]diisoquinoline-1,3,8,10(2H,9H)-tetrone (PDINO), Cu2FeSnS4 (CFTS) hole (HTL). This article aims address global challenges caused exploring alternative solutions. Upon optimization, achieved 16.86%, fill factor (FF) 79.12%, short-circuit current density (JSC) 33.19 mA cm−2, an open-circuit voltage (VOC) 0.64 V. results obtained can guide fabrication NFA-based near future.

Language: Английский

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