Advanced Materials,
Journal Year:
2025,
Volume and Issue:
unknown
Published: Jan. 10, 2025
Anisotropic
carrier
transport
and
deep-level
defect
of
antimony
selenosulfide
(Sb2(S,Se)3)
absorber
are
two
vital
auses
restraining
the
photovoltaic
performance
this
emerging
thin-film
solar
cell.
Herein,
chelate
engineering
is
proposed
to
prepare
high-quality
Sb2(S,Se)3
film
based
on
hydrothermal
deposition
approach,
which
realizes
desirable
passivated
defects
by
using
tetrahedral
PO4
3-
ion
in
dibasic
sodium
phosphate
(Na2HPO4,
DSP).
The
Lewis
structure,
one
hand
form
[(SbO)3(PO4)]
chelate,
can
adsorb
polar
planes
cadmium
sulfide
(CdS)
layer,
promoting
heterogeneous
nucleation,
other
hand,
inhibits
horizontal
growth
(Sb4S(e)6)n
ribbons
due
size
effects,
thus
achieving
[hk1]
orientation.
Moreover,
introduction
effectively
passivates
antisite
SbS1.
These
synergistic
effects
have
improved
reduced
non-radiative
recombination
absorber.
Consequently,
DSP-modified
device
efficiency
increases
from
8.59%
10.67%.
Self-powered
broadband
photodetectors
(SPBPDs)
hold
great
potential
for
next-generation
optoelectronic
applications,
but
their
performance
is
often
limited
by
interface
defects
that
impair
charge
transport
and
increase
recombination
losses.
In
this
work,
we
report
the
enhancement
of
photodetection
efficiency
SPBPDs
partially
substituting
copper
(Cu)
with
silver
(Ag)
in
kesterite
Cu2ZnSnS4
(ACZTS)
thin
films.
Varying
Ag
concentrations
(0%,
2%,
4%,
6%)
are
incorporated
into
CZTS
layer,
forming
a
TiO2/ACZTS
heterojunction
superstrate
configuration
fabricated
via
low-cost
sol–gel
spin-coating
technique
low-temperature
open
air
annealing
avoiding
conventional
postdeposition
sulfurization
or
selenization.
Photodetection
varied
significantly
content
where
optimal
observed
4%
doping.
Under
simulated
solar
spectrum
(100
mW/cm2),
TiO2/4%
ACZTS
device
demonstrates
superior
an
ON/OFF
ratio
6.0
×
102,
photoresponsivity
0.42
mA/W,
detectivity
about
2.5
109
Jones.
contrast,
under
405
nm
incident
radiation,
improves
significantly,
achieving
approximately
4.6
103,
around
63.9
4.8
1011
Jones
which
highest
reported
values
CZTS-based
single-junction
without
crystalline
silicon
wafer.
doping
effectively
reduces
enhances
carrier
dynamics,
as
evidenced
capacitance–voltage
(C–V)
drive-level
capacitance
profiling
(DLCP)
measurements
heterojunction.
This
approach
offers
novel
strategy
enhancing
SPBPD
through
partial
cation
substitution,
paving
way
advanced
diverse
applications.
Advanced Energy Materials,
Journal Year:
2024,
Volume and Issue:
unknown
Published: Nov. 26, 2024
Abstract
This
5th
annual
“
Emerging
PV
Report”
highlights
the
latest
advancements
in
performance
of
emerging
photovoltaic
(e‐PV)
devices
across
various
e‐PV
research
areas,
as
documented
peer‐reviewed
articles
published
since
August
2023.
Updated
graphs,
tables,
and
analyses
are
provided,
showcasing
several
key
parameters,
including
power
conversion
efficiency,
open‐circuit
voltage,
short‐circuit
current,
fill
factor,
light
utilization
stability
test
energy
yield.
These
parameters
presented
functions
bandgap
average
visible
transmittance
for
each
technology
application
contextualized
using
benchmarks
such
detailed
balance
efficiency
limit.
Advanced Energy Materials,
Journal Year:
2024,
Volume and Issue:
unknown
Published: Dec. 17, 2024
Abstract
Enhancing
the
efficiency
of
Cu
2
ZnSn
(S,
Se)
4
(CZTSSe)
thin‐film
solar
cells
requires
development
well‐crystallized
light‐absorbing
layers.
A
deep
understanding
role
precursor
solution
chemistry
in
film
nucleation
and
crystal
growth
processes
is
essential.
Insights
into
these
enable
innovative
strategies
to
enhance
absorber
quality,
minimize
detrimental
bulk
defects,
ultimately
improve
device
performance.
This
study
elucidates
condensation
reactions
between
thiourea
metal
cations,
as
well
alcoholysis
2‐methoxyethanol
(MOE),
at
different
concentrations
solutions.
The
primary
focus
this
implementing
a
simple
environmentally
friendly
spin‐coating
strategy,
aimed
optimizing
ZnSnS
(CZTS)
films
adjusting
Se
content
within
promote
grain
during
selenization.
strategy
effectively
improves
morphology
while
suppressing
formation
deep‐level
thereby
enhancing
carrier
transport
both
interfacial
regions
layer.
Consequently,
CZTSSe
absorbers
with
enhanced
crystallinity
reduced
defects
are
synthesized,
resulting
cell
an
impressive
14.10%.
These
findings
underscore
potential
for
creating
highly
efficient
kesterite
through
manipulation
using
solvents.
Applied Physics Reviews,
Journal Year:
2025,
Volume and Issue:
12(1)
Published: Jan. 24, 2025
High-performing
semiconductor
thin
films
are
crucial
components
in
today's
electronic
age,
finding
extensive
applications
devices
and
chips.
Recently,
there
has
been
a
significant
trend
toward
incorporating
lanthanide
elements
into
these
films,
primarily
driven
by
the
escalating
demand
for
photonic
optoelectronic
applications.
The
featured
article
presents
detailed
overview
of
latest
research
advancements
lanthanide-doped
tailored
uses.
This
comprehensive
review
encompasses
principles,
design
considerations,
fabrication
methods,
characterization
techniques
involved
creating
doped
films.
semiconductors
discuss
span
range
materials,
including
wide
bandgap
semiconductors,
perovskites,
two-dimensional
piezoelectric
organic
materials.
further
explores
Finally,
it
delves
current
challenges,
potential
solutions,
future
prospects,
gaps
that
need
to
be
addressed
this
exciting
field.
