Small Methods,
Journal Year:
2024,
Volume and Issue:
unknown
Published: Dec. 24, 2024
Abstract
Memristors
and
magnetic
tunnel
junctions
are
showing
great
potential
in
data
storage
computing
applications.
A
magnetoelectrically
coupled
memristor
utilizing
electron
spin
electric
field‐induced
ion
migration
can
facilitate
their
operation,
uncover
new
phenomena,
expand
In
this
study,
devices
consisting
of
Pt/(LaCoO
3
/SrTiO
)
n
/LaCoO
/Nb:SrTiO
(Pt/(LCO/STO)
/LCO/NSTO)
engineered
using
pulsed
laser
deposition
to
form
the
LCO/STO
superlattice
layer,
with
Pt
NSTO
serving
as
top
bottom
electrodes,
respectively.
The
results
show
that
both
memristive
magnetoresistive
properties
coexist
without
any
compromise
performance,
values
R
OFF
/R
ON
magnetoresistance
(TMR)
ratio
improved
by
≈1000%
compared
a
single‐period
heterostructure.
Notably,
Pt/(LCO/STO)
5
/LCO/NSTO
device
demonstrates
superior
multilevel
characterized
extended
endurance,
reliable
retention,
high
ratio,
significant
TMR
fundamental
synaptic
behaviors.
Furthermore,
density
functional
theory
(DFT)
is
employed
calculate
changes
oxygen
vacancies,
affecting
overall
energy
bands
moments
monolayer
multi‐periodic
structures.
Simulations
handwritten
digit
recognition
classification
achieve
highest
accuracy
94.38%.
These
attributes
suggest
hold
considerable
promise
for
application
neuromorphic
computing,
offering
platform
high‐density
neural
circuits
intelligent
electronic
devices.
Portable
sensor
technologies
are
indispensable
in
personalized
healthcare
and
environmental
monitoring
as
they
enable
the
continuous
tracking
of
key
analytes.
Human
sweat
contains
valuable
physiological
information,
previously
developed
noninvasive
sweat-based
sensors
have
effectively
monitored
single
or
multiple
biomarkers.
By
successfully
detecting
biochemicals
sweat,
portable
could
also
significantly
broaden
their
application
scope,
encompassing
non-biological
fluids
commonly
encountered
daily
life,
such
mineral
water.
However,
developing
a
electrochemical
sensing
system
with
sustainable
power
remains
challenge
for
real-time,
on-site
analysis
complex
outdoor
applications.
Here,
we
present
power-sustainable
platform,
composed
sensors,
multichannel
data
acquisition
circuit,
microfluidic
module,
supply
that
is
designed
to
conform
onto
human
body
use.
The
device
enables
simultaneous
selective
measurement
Na
Applied Physics Letters,
Journal Year:
2025,
Volume and Issue:
126(6)
Published: Feb. 10, 2025
Neuromimetic
devices
have
emerged
as
transformative
technologies
with
the
potential
to
redefine
traditional
computing
paradigms
and
enable
advanced
artificial
neural
systems.
Among
various
innovative
materials,
two-dimensional
(2D)
materials
garnered
attention
frontrunners
for
next-generation
device
fabrication.
In
this
work,
we
report
fabrication
comprehensive
characterization
of
a
memristor
based
on
2D
PtTe2.
The
demonstrates
exceptional
performance
metrics,
including
high
OFF/ON
ratio,
low
switching
voltage,
long
data
retention
time.
Leveraging
density
functional
theory
calculations,
unravel
underlying
conduction
mechanism,
revealing
pivotal
role
Ag
conductive
filaments
in
resistive
behavior.
Furthermore,
neuromorphic
capabilities
PtTe2
were
evaluated
through
its
emulation
key
brain-inspired
synaptic
functionalities,
such
long-term
depression/enhancement,
paired-pulse
facilitation,
spike-timing-dependent
plasticity.
By
modulating
electrical
conductance,
implemented
convolutional
network
MNIST
handwritten
digit
recognition,
achieving
remarkable
accuracy
97.49%.
To
further
illustrate
adaptive
learning
capabilities,
demonstrated
Pavlov's
dog
experiment
using
device.
This
study
establishes
promising
material
applications
represents
critical
step
forward
bridging
gap
between
architectures.
These
findings
lay
robust
foundation
future
exploration
field
engineering.
Advanced Functional Materials,
Journal Year:
2025,
Volume and Issue:
unknown
Published: Feb. 19, 2025
Abstract
In
this
study,
a
highly
rectifying
memristor
composed
of
Pt/TaO
x
/TiN
stack,
incorporating
complementary
metal‐oxide
semiconductor‐friendly
metal
oxide
switching
layer,
is
fabricated
to
assess
its
performance
in
diverse
range
applications.
The
exhibits
characteristics
due
the
Schottky
barrier
formed
by
work
function
difference
between
Pt
and
TiN
electrodes.
For
compliance
current
1
mA,
displays
volatile
memory
properties,
attributed
migration
oxygen
ions
within
TaO
layer.
Leveraging
behavior,
synaptic
functions—where
changes
plasticity
occur
response
incoming
spikes—are
emulated.
Additionally,
complete
functions
biological
nociceptor
are
demonstrated,
including
threshold,
relaxation,
no‐adaptation,
sensitization,
recovery.
These
dynamic
then
utilized
mimic
neuronal
firing
with
array,
Morse
code
implementation
enabling
data
generation,
computing
through
cost‐effective
reservoir
computing.
simplicity
fabrication
process
broad
implemented
single
make
device
promising
candidate
for
future
Sensors,
Journal Year:
2025,
Volume and Issue:
25(5), P. 1533 - 1533
Published: March 1, 2025
Neuromorphic
devices
emulating
the
temperature-sensing
capabilities
of
biological
thermoreceptors
hold
significant
promise
for
neuron-like
artificial
sensory
systems.
In
this
work,
Bi2Se3-based
threshold-switching
memristors
were
presented
in
constructing
neuron
circuits,
leveraging
its
exceptional
attributes,
such
as
high
switching
ratio
(>106),
low
threshold
voltage,
and
thermoelectric
response.
The
spiking
oscillation
response
to
resistance
temperature
variations
was
analyzed
using
Hspice
simulation
memristor
model
based
on
on/off
states,
voltage
(Vth),
(Vhold).
These
results
show
great
potential
enabling
biorealistic
thermoreception
applications.
Nanoscale,
Journal Year:
2024,
Volume and Issue:
16(32), P. 15330 - 15342
Published: Jan. 1, 2024
The
increasing
demand
for
energy-efficient
data
processing
leads
to
a
growing
interest
in
neuromorphic
computing
that
aims
emulate
cerebral
functions.
This
approach
offers
cost-effective
and
rapid
parallel
processing,
surpassing
the
limitations
of
conventional
von
Neumann
architecture.
Key
this
emulation
is
development
memristors
mimic
biological
synapses.
Recently,
research
efforts
have
focused
on
incorporation
nociceptors-sensory
neurons
capable
detecting
external
stimuli-into
applications
robotics
artificial
intelligence.
integration
enables
adapt
various
circumstances
while
remaining
cost-effective.
A
nonfilamentary
gradual
resistive
switching
memristor
utilized
implement
nociceptor
synaptic
behaviors.
fabricated
Pt/indium
gallium
zinc
oxide
(IGZO)/SnO
Small,
Journal Year:
2025,
Volume and Issue:
unknown
Published: April 25, 2025
Abstract
Oxide‐based
self‐rectifying
memristors
have
emerged
as
promising
candidates
for
the
construction
of
neural
networks,
owing
to
their
advantageous
features
such
high‐density
integration,
low
power
consumption,
3D
stackability,
straightforward
fabrication
processes,
and
compatibility
with
complementary
metal‐oxide‐semiconductor
(CMOS)
technology.
Notwithstanding
these
merits,
there
remains
considerable
scope
suppression
parasitic
currents
in
large‐scale
memristor
arrays,
which
poses
a
notable
challenge
development
extensive
networks
capable
executing
intricate
computational
tasks.
This
study
introduces
1
kbit
array
based
on
Pt/HfO
2
/Ti
structural
units.
Individual
devices
this
not
only
exhibit
switching
ratios
exceeding
10
3
,
but
also
maintain
rectification
greater
than
5
excellent
negative
performance
effectively
suppresses
latent
path
array.
Moreover,
convolutional
calculation
logic
forward
inference
process
8‐bit
are
demonstrated
array,
verifies
feasibility
using
arrays
simulate
all
hardware
operations.
Ultimately,
complete
network
system
is
constructed,
achieving
recognition
rate
up
98%
handwriting
task.
work
provides
new
strategy
toward
implementation
all‐hardware
computing
networks.
