Suppression of Tin Oxidation via Sn→B Bonding Interactions for High‐Resolution Lead‐Free Perovskite Neuromorphic Imaging Sensors DOI
Tianhua Liu, Hao Wang, Chang Q. Sun

et al.

Advanced Materials, Journal Year: 2025, Volume and Issue: unknown

Published: May 8, 2025

Abstract Lead‐free tin‐based perovskites, specifically (4‐Cl‐PEA) 2 SnI 4 , possess significant potential for the development of high‐performance, robust neuromorphic imaging sensors, owing to their superior optoelectronic properties and compatibility with conventional complementary metal‐oxide‐semiconductor fabrication techniques silicon‐based readout circuits. However, excessive oxidation Sn 2+ remains a obstacle, leading suboptimal synaptic performance low resolution in sensors due increased recombination losses poor film uniformity. This study first demonstrates that introduction novel Sn→B donor–acceptor bonding interactions effectively suppresses oxidation, enhancing uniformity, reducing nonradiative recombination, improving plasticity. A vertical synapse diverse behaviors, attributed hole trapping detrapping at device interface. Additionally, enables applications associative learning, computation, letter encoding, handwritten digit recognition. Ultimately, integration silicon circuits results high‐resolution (32 × 32) array, one highest reported resolutions perovskite arrays. The improved uniformity boric acid‐added films significantly reduces photo response non‐uniformity, enhances resolution, improves memory capabilities. array successfully integrates sensing, storage, enabling advanced functionalities like recognition, memory, processing, surpassing image sensors.

Language: Английский

Suppression of Tin Oxidation via Sn→B Bonding Interactions for High‐Resolution Lead‐Free Perovskite Neuromorphic Imaging Sensors DOI
Tianhua Liu, Hao Wang, Chang Q. Sun

et al.

Advanced Materials, Journal Year: 2025, Volume and Issue: unknown

Published: May 8, 2025

Abstract Lead‐free tin‐based perovskites, specifically (4‐Cl‐PEA) 2 SnI 4 , possess significant potential for the development of high‐performance, robust neuromorphic imaging sensors, owing to their superior optoelectronic properties and compatibility with conventional complementary metal‐oxide‐semiconductor fabrication techniques silicon‐based readout circuits. However, excessive oxidation Sn 2+ remains a obstacle, leading suboptimal synaptic performance low resolution in sensors due increased recombination losses poor film uniformity. This study first demonstrates that introduction novel Sn→B donor–acceptor bonding interactions effectively suppresses oxidation, enhancing uniformity, reducing nonradiative recombination, improving plasticity. A vertical synapse diverse behaviors, attributed hole trapping detrapping at device interface. Additionally, enables applications associative learning, computation, letter encoding, handwritten digit recognition. Ultimately, integration silicon circuits results high‐resolution (32 × 32) array, one highest reported resolutions perovskite arrays. The improved uniformity boric acid‐added films significantly reduces photo response non‐uniformity, enhances resolution, improves memory capabilities. array successfully integrates sensing, storage, enabling advanced functionalities like recognition, memory, processing, surpassing image sensors.

Language: Английский

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