Anchorable Polymers Enabling Ultra‐Thin and Robust Hole‐Transporting Layers for High‐Efficiency Inverted Perovskite Solar Cells

Angewandte Chemie International Edition, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 9, 2025

Abstract Currently, the development of polymeric hole‐transporting materials (HTMs) lags behind that small‐molecule HTMs in inverted perovskite solar cells (PSCs). A critical challenge is conventional are incapable forming ultra‐thin and conformal coatings like self‐assembly monolayers (SAMs), especially for substrates with rough surface morphology. Herein, we address this by designing anchorable (CP1 to CP5). Specifically, coordinative pyridyl groups introduced as side‐chains on poly‐triarylamine (PTAA) backbone varied contents copolymerization method, resulting chemical interactions between substrates. The strong interaction allows them be processed into ultra‐thin, uniform, robust layers through employing low‐concentration solutions (0.1 mg mL −1 , vs. 2.0–5.0 PTAA), greatly decreasing charge transport losses. Moreover, upon systematically tuning substitution ratio, energy levels, wetting, solution processability, defect passivation capability such simultaneously optimized. Based optimal CP4, achieved highly efficient PSCs power conversion efficiencies (PCEs) up 26.21 %, which par state‐of‐the‐art SAM‐based PSCs. Furthermore, these devices exhibit enhanced stabilities under repeated current–voltage scans reverse bias ageing compared devices.

Language: Английский

Anchorable Polymers Enabling Ultra‐Thin and Robust Hole‐Transporting Layers for High‐Efficiency Inverted Perovskite Solar Cells

Angewandte Chemie, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 9, 2025

Abstract Currently, the development of polymeric hole‐transporting materials (HTMs) lags behind that small‐molecule HTMs in inverted perovskite solar cells (PSCs). A critical challenge is conventional are incapable forming ultra‐thin and conformal coatings like self‐assembly monolayers (SAMs), especially for substrates with rough surface morphology. Herein, we address this by designing anchorable (CP1 to CP5). Specifically, coordinative pyridyl groups introduced as side‐chains on poly‐triarylamine (PTAA) backbone varied contents copolymerization method, resulting chemical interactions between substrates. The strong interaction allows them be processed into ultra‐thin, uniform, robust layers through employing low‐concentration solutions (0.1 mg mL −1 , vs. 2.0–5.0 PTAA), greatly decreasing charge transport losses. Moreover, upon systematically tuning substitution ratio, energy levels, wetting, solution processability, defect passivation capability such simultaneously optimized. Based optimal CP4, achieved highly efficient PSCs power conversion efficiencies (PCEs) up 26.21 %, which par state‐of‐the‐art SAM‐based PSCs. Furthermore, these devices exhibit enhanced stabilities under repeated current–voltage scans reverse bias ageing compared devices.

Language: Английский

Electronic and Optical Properties of One-Dimensional Van Der Waals Nanodevices Based on MoS2(n,n) and MoSe2(n,n) Nanotubes

Crystals, Journal Year: 2024, Volume and Issue: 14(12), P. 1055 - 1055

Published: Dec. 5, 2024

In this work, the optical and electronic characteristics of MoS2(n,n) MoSe2(n,n) nanotubes 1D van der Waals nanoheterostructures based on them are determined from first principles. It is shown that with an increase in diameters nanotubes, their bandgaps (in MoS2(n,n), gap varies 0.27 eV to 1.321 eV, 0.153 1.216 eV). was found diameter static permittivity decreases; nanostructures MoS2(8,8)@MoSe2(16,16) MoS2(6,6)@MoSe2(14,14) consisting coaxially compound MoS2(8,8) MoSe2(16,16), MoS2(6,6) MoSe2(14,14), respectively, have high dielectric permittivitiesof 6. 5367 3.0756. Such offer potential for developing various nanoelectronic devices due possibility effective interaction electric field. Studies revealed MoSe2(6,6)@MoS2(14,14) MoSe2(8,8)@MoS2(16,16) exhibit a semiconductor nature bandgap widths 0.174 0.53 metallic properties. Stepped areas Coulomb origin constant period at voltage 0.448 V appear current–voltage characteristic nanoheterodevices. nanodevices transmit current preferentially forward direction formation nanoheterojunction between different forbidden band values. The fundamental regularities obtained during study can be useful further development components nano- microelectronics.

Language: Английский