Modulation of optoelectronic properties of WO3 thin film via Cr doping through RF co-sputtering
Inorganic Chemistry Communications,
Journal Year:
2025,
Volume and Issue:
unknown, P. 114300 - 114300
Published: March 1, 2025
Language: Английский
Impact of aluminium doping in magnesium-doped zinc oxide thin films by sputtering for photovoltaic applications
Journal of Materials Science,
Journal Year:
2024,
Volume and Issue:
59(21), P. 9472 - 9490
Published: May 27, 2024
Abstract
In
this
study,
Mg-doped
zinc
oxide
(MZO)
thin
films
were
deposited
through
radio
frequency
(RF)
sputtering
for
different
substrate
temperatures
ranging
from
room
temperature
(25
°C)
to
350
°C.
XRD
analysis
depicted
that
the
higher
lead
increased
crystallite
size.
From
UV–Vis
spectroscopy,
transmittance
(T)
was
found
approximately
95%
and
optical
band
energy
gap
(E
g
)
determined
around
3.70
eV.
Hall
effect
measurement
system
measured
carrier
concentration
resistivity
of
all
in
order
10
14
cm
−3
3
Ω-cm,
respectively.
Since
structural
optoelectrical
properties
MZO
not
significantly
affected
by
temperatures,
Aluminium
(Al)
co-doped
film
improve
properties.
As
a
result,
Al
doped
(AMZO)
up
~
20
(MZO),
decreased
–1
Ω-cm
representing
significant
changes
electrical
without
affecting
transmittance.
This
study
opens
pathway
improving
buffer
layer
can
enhance
cell
performance
CdTe
solar
cells.
Graphical
abstract
Language: Английский
Exploring the Theoretical Potential of Tungsten Oxide (WOx) as a Universal Electron Transport Layer (ETL) for Various Perovskite Solar Cells through Interfacial Energy Band Alignment Modulation
Md. Mahfuzul Haque,
No information about this author
Samiya Mahjabin,
No information about this author
Huda Abdullah
No information about this author
et al.
Journal of Physics and Chemistry of Solids,
Journal Year:
2024,
Volume and Issue:
196, P. 112324 - 112324
Published: Sept. 11, 2024
Language: Английский
Exploring ionic liquid assisted chemical bath deposition of a highly uniform and transparent cadmium sulfide thin film for photovoltaic applications
RSC Advances,
Journal Year:
2025,
Volume and Issue:
15(7), P. 4892 - 4903
Published: Jan. 1, 2025
Improved
cadmium
sulfied
(CdS)
thin
films
via
controlled
deposition
using
ionic
liquids.
Language: Английский
Impact of post deposition treatment on optoelectrical and microstructural properties of tin sulfide thin film for photovoltaic applications
Nisha,
No information about this author
Prosenjit Sarkar,
No information about this author
Pawan Kumar
No information about this author
et al.
Physica Scripta,
Journal Year:
2024,
Volume and Issue:
99(7), P. 075922 - 075922
Published: June 6, 2024
Abstract
Tin
sulfide
(SnS)
has
attracted
significant
interest
due
to
its
advantageous
optoelectrical
characteristics
and
abundant
presence
in
nature.
Post-deposition
treatments
(PDTs)
are
frequently
employed
enhance
the
crystallinity
of
chalcogenide-based
solar
cells.
This
study
examined
influence
post-deposition
heat
treatment
procedure
on
thermally
evaporated
SnS
thin
film.
The
annealing
process,
as
determined
by
XRD
AFM
studies,
supplies
necessary
thermal
energy
for
re-crystallization,
potentially
resulting
a
modification
crystallite
dimensions.
occurrence
Sn-S
polytypes
was
using
Raman
XPS
studies.
Annealing
causes
changes
optical
properties,
observed
through
analysis,
which
can
be
attributed
improvement
crystallinity.
Subjecting
material
at
temperature
300
°C
greatly
improves
both
mobility
conductivity,
while
also
causing
change
conduction
type.
variations
type
differing
ratios
between
amounts
Sn
2+
4+
.
strategy
offers
novel
route
fabrication
thin-film
photovoltaic
cells
p-type
buffer
layer.
Language: Английский
Tailoring Ga‐Doped ZnO Thin Film Properties for Enhanced Optoelectric Device Performance: Argon Flow Rate Modulation and Dynamic Sputtering Geometry Analysis
Solar RRL,
Journal Year:
2024,
Volume and Issue:
unknown
Published: Dec. 17, 2024
The
impact
of
dynamic
sputtering
geometry
on
the
properties
ZnO:
Ga
(GZO)
thin
film
nanomaterials
is
investigated
by
systematically
varying
Ar
flow
rates
and
substrate
positions
during
growth.
structural,
optical,
electrical
characteristics
GZO
layers,
deposited
from
a
(5.7
wt%)
ceramic‐type
target,
are
comprehensively
evaluated
to
reveal
relationship
between
material
properties.
obtained
properties,
comparatively
high
carrier
mobility
11.3
×
10
1
cm
2
V
−1
s
lowest
resistivity
1.13
−3
Ω‐cm,
together
with
moderately
optoelectric
figure
merit
films
prepared
using
around
6
sccm
Ar‐flow
rate
(corresponding
4.92
mTorr
partial
pressure)
distinct
correlations
conditions
providing
insights
into
optimization
parameters
for
tailored
synthesis
required
advanced
emerging
applications.
(prepared
optimal
setting
rate)
exhibits
remarkable
optoelectronic
capabilities
as
transport
layer
in
solar
cells,
reaching
peak
efficiencies
26.34%
CIGS,
14.142%
CdTe,
24.289%
Cs
AgBiBr
perovskite
SCAPS‐1D
simulated
models.
This
study
advances
techniques
precise
engineering
functional
enhanced
performance
versatility,
contributing
Language: Английский