Enhanced broadband IR absorption and electrical characteristics of silicon variably hyperdoped by sulfur (1018-1021 cm−3) by ion implantation/pulsed laser annealing DOI
Ivan Podlesnykh, M. S. Kovalev, Alena Nastulyavichus

et al.

Materials Science in Semiconductor Processing, Journal Year: 2024, Volume and Issue: 184, P. 108830 - 108830

Published: Aug. 24, 2024

Language: Английский

Enhanced broadband IR absorption and electrical characteristics of silicon variably hyperdoped by sulfur (1018-1021 cm−3) by ion implantation/pulsed laser annealing DOI
Ivan Podlesnykh, M. S. Kovalev, Alena Nastulyavichus

et al.

Materials Science in Semiconductor Processing, Journal Year: 2024, Volume and Issue: 184, P. 108830 - 108830

Published: Aug. 24, 2024

Language: Английский

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