Self‐Assembled Monolayer Assisted Biphasic Heterojunction Organic Photodiode for Panel‐Level Manufacturing of Active‐Matrix Optical Imager DOI Open Access
Tong Shan, Jun Li,

Qing Bai

et al.

Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 31, 2025

Abstract Organic photodiodes (OPDs) have shown great promises for large‐area optical imagers attributed to ease of processing and tunable performance in a wide wavelength range. A biphasic heterojunction (BPHJ) OPD design, having bulky structure on top monophasic donor layer, is proposed this work. The BPHJ spontaneously formed self‐assembled monolayer (SAM) treated indium tin oxide surface by depositing the acceptor layers sequentially. fabricated OPDs present significantly reduced dark current meanwhile improved specific detectivity with larger linear dynamic range faster response compared conventional devices. This strategy proved be universal various donor/acceptor combinations, covering from visible near‐infrared. Such well compatible back‐end‐of‐line integration processes TFT backplane semiconductor display fab. An active‐matrix imager an ultralow detection limit can reproduce ideal image quality under ultra‐low light intensity nW cm −2 level.

Language: Английский

Self‐Assembled Monolayer Assisted Biphasic Heterojunction Organic Photodiode for Panel‐Level Manufacturing of Active‐Matrix Optical Imager DOI Open Access
Tong Shan, Jun Li,

Qing Bai

et al.

Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 31, 2025

Abstract Organic photodiodes (OPDs) have shown great promises for large‐area optical imagers attributed to ease of processing and tunable performance in a wide wavelength range. A biphasic heterojunction (BPHJ) OPD design, having bulky structure on top monophasic donor layer, is proposed this work. The BPHJ spontaneously formed self‐assembled monolayer (SAM) treated indium tin oxide surface by depositing the acceptor layers sequentially. fabricated OPDs present significantly reduced dark current meanwhile improved specific detectivity with larger linear dynamic range faster response compared conventional devices. This strategy proved be universal various donor/acceptor combinations, covering from visible near‐infrared. Such well compatible back‐end‐of‐line integration processes TFT backplane semiconductor display fab. An active‐matrix imager an ultralow detection limit can reproduce ideal image quality under ultra‐low light intensity nW cm −2 level.

Language: Английский

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