Weyl‐Related Surface Circular Photogalvanic Effect in Nonsymmorphic‐Symmetry ZrGeTe4 Semiconductor DOI Open Access
Ruixue Bai,

Xiaoshan Du,

Rui Zhou

et al.

Laser & Photonics Review, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 20, 2025

Abstract Weyl semiconductors, combining the high tunability features of semiconductors with exotic topological properties materials, are great significance for fundamental physics studies and functional devices. Despite potential theoretical implications, few experimentally discovered. Chirality is an extraordinary feature nodes, which can give rise to helicity‐resolved photocurrents, known as circular photogalvanic effect (CPGE). Here, this work discloses surface CPGE in nonsymmorphic‐symmetry ZrGeTe 4 via a specific excitation detection geometry, demonstrating that it originates from asymmetric helicity‐dependent optical transitions between two Kramers–Weyl nodes conduction valence bands. Wavelength‐dependent experiments support chirality‐related semiconductors. It confirmed Weyl‐related intrinsic phenomenon be flexibly tuned in‐plane electric field. The provides new platform designing spintronic, optoelectronic, quantum devices by integrating advantages materials versatile

Language: Английский

Weyl‐Related Surface Circular Photogalvanic Effect in Nonsymmorphic‐Symmetry ZrGeTe4 Semiconductor DOI Open Access
Ruixue Bai,

Xiaoshan Du,

Rui Zhou

et al.

Laser & Photonics Review, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 20, 2025

Abstract Weyl semiconductors, combining the high tunability features of semiconductors with exotic topological properties materials, are great significance for fundamental physics studies and functional devices. Despite potential theoretical implications, few experimentally discovered. Chirality is an extraordinary feature nodes, which can give rise to helicity‐resolved photocurrents, known as circular photogalvanic effect (CPGE). Here, this work discloses surface CPGE in nonsymmorphic‐symmetry ZrGeTe 4 via a specific excitation detection geometry, demonstrating that it originates from asymmetric helicity‐dependent optical transitions between two Kramers–Weyl nodes conduction valence bands. Wavelength‐dependent experiments support chirality‐related semiconductors. It confirmed Weyl‐related intrinsic phenomenon be flexibly tuned in‐plane electric field. The provides new platform designing spintronic, optoelectronic, quantum devices by integrating advantages materials versatile

Language: Английский

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