Effect of Rapid Thermal Annealing on the Characteristics of Micro Zn-Doped Ga2O3 Films by Using Mixed Atomic Layer Deposition

Nanomaterials, Journal Year: 2025, Volume and Issue: 15(7), P. 499 - 499

Published: March 26, 2025

In this work, micro Zn-doped Ga2O3 films (GZO) were deposited by one-step mixed atomic layer deposition (ALD) followed post-thermal engineering. The effects of Zn doping and post-annealing temperature on both structure characteristics electric properties investigated in detail. combination plasma-enhanced ALD thermal ZnO can realize the fast growth rate (0.62 nm/supercyc.), high density (4.9 g/cm3), smooth interface (average Rq = 0.51 nm) film. addition, engineering GZO was achieved setting annealing to 400, 600, 800, 1000 °C, respectively. film annealed at 800 °C exhibits a typical crystalline (Ga2O3: β phase, ZnO: hexagonal wurtzite), lower roughness 2.7 nm), higher average breakdown field (16.47 MV/cm). Notably, compared with pure film, increases 180%. OV content after is as low 34.8%, resulting remarkable enhancement electrical properties. These research findings offer new perspective high-quality ALD-doped materials application high-power electronics high-sensitive devices.

Language: Английский

Photoluminescence study of optical transitions in spinel zinc gallium oxide thin films

Scientific Reports, Journal Year: 2025, Volume and Issue: 15(1)

Published: May 14, 2025

Language: Английский