SGOI Wafers with High Structural and Electrical Quality Fabricated through Ge Condensation in SiGe/SOI DOI
Mansour Aouassa, A. Ádám, Ismail Madaci

et al.

Vacuum, Journal Year: 2025, Volume and Issue: unknown, P. 114410 - 114410

Published: May 1, 2025

Language: Английский

Frequency and voltage dependent of electrical and dielectric properties of 14 nm Fully Depleted Silicon-On-Insulator (FD-SOI) DOI
Mohammed Bouabdellaoui, Mansour Aouassa, N.K. Hassan

et al.

Physica B Condensed Matter, Journal Year: 2025, Volume and Issue: unknown, P. 417061 - 417061

Published: Feb. 1, 2025

Language: Английский

Citations

8
SiGe Mie resonators grown on photoactive silicon nanodisks for high-performance photodetection DOI
Mansour Aouassa, Mohammed Bouabdellaoui,

Walter Batista Pessoa

et al.

Journal of Materials Science Materials in Electronics, Journal Year: 2025, Volume and Issue: 36(6)

Published: Feb. 1, 2025

Language: Английский

Citations

3
RGO-Si QDs Hybrid Photodetector with Enhanced Photosensitivity DOI

Dalila Khlaifia,

Mansour Aouassa, L. Torrisi

et al.

Physica B Condensed Matter, Journal Year: 2025, Volume and Issue: unknown, P. 417133 - 417133

Published: March 1, 2025

Language: Английский

Citations

2
High Photosensitive Amorphous Germanium-Based MIS Photodetector DOI

Mohammed Ibrahim,

Mansour Aouassa, N.K. Hassan

et al.

Physica B Condensed Matter, Journal Year: 2025, Volume and Issue: unknown, P. 417229 - 417229

Published: April 1, 2025

Language: Английский

Citations

1
MBE growth of highly sensitive silicon PIN diode with magnetic Mn-doped Ge quantum dots for photodetector and solar cell applications DOI
M. Yahyaoui, Mansour Aouassa, Mohammed Bouabdellaoui

et al.

Applied Physics A, Journal Year: 2024, Volume and Issue: 130(10)

Published: Sept. 30, 2024

Language: Английский

Citations

4
Photocurrent and electrical properties of SiGe Nanocrystals grown on insulator via Solid-state dewetting of Ge/SOI for Photodetection and Solar cells Applications DOI

A.K. Aladim,

Mansour Aouassa, Sonia Amdouni

et al.

Vacuum, Journal Year: 2024, Volume and Issue: unknown, P. 113892 - 113892

Published: Nov. 1, 2024

Language: Английский

Citations

4
High photosensitivity in amorphous silicon-capped silicon nanocrystals embedded in metal-insulator-semiconductor structures (Al/@Si/Si NCs/SiO₂/n-Si) for photodetection and energy harvesting DOI

S. Ghalab,

Mansour Aouassa, N.K. Hassan

et al.

Physica B Condensed Matter, Journal Year: 2024, Volume and Issue: 699, P. 416830 - 416830

Published: Dec. 12, 2024

Language: Английский

Citations

4
Electrical Properties of Schottky Devices from HfO2 and ZnO/HfO2 Thin Films: Morphological, Structural, and Optical Investigations DOI Creative Commons
Ayten Seçkin, Haluk Koralay

ACS Omega, Journal Year: 2025, Volume and Issue: 10(7), P. 6520 - 6533

Published: Feb. 12, 2025

The structural and electronic properties of thin films are crucial for the performance heterojunction diodes, which key components in modern devices. Optimizing these through advanced materials fabrication techniques is an area significant research, particularly reducing leakage currents enhancing device reliability. This study investigates characteristics a monolayer HfO2 double layer ZnO/HfO2 interface layer. research specifically examines impact on current transport n-ZnO/p-Si because understanding mechanisms ZnO films, especially relation to defects currents, presents challenge. Current–voltage characterization reveals that grown by sol–gel spin coating. exhibit behavior consistent with tunneling, exponential trap distributions contributing under high voltage bias conditions. A thermionic emission (TE) mechanism observed at low voltages (V < 0.4 V), followed space-charge limited conduction (SCLC) medium 0.5 charge (TCLC) > 1 V) dark forward current–voltage characteristics. incorporation n-ZnO/HfO2/p-Si structure significantly reduces associated defects. These findings advance ZnO/HfO2-based diodes pave way their potential application more efficient X-ray diffraction (XRD) spectra have revealed all crystallize hexagonal wurtzite structure. Structural parameters such as crystallite size, dislocation density, microstrain crystal been calculated. coating thicknesses elemental thin-film samples were determined from Field scanning electron microscopy (FE-SEM) images obtained both surface cross-sectional views. energy band gaps using absorption measurements ultraviolet (UV) spectrophotometer. roughness topography information Atomic force (AFM).

Language: Английский

Citations

0
Frequency and voltage dependent electrical and dielectric properties of Al/p-Si semiconductor structures with GO interlayer DOI
Niyazi Berk, Ahmet Turan, Şükrü Karataş

et al.

Physica B Condensed Matter, Journal Year: 2025, Volume and Issue: 711, P. 417301 - 417301

Published: April 23, 2025

Language: Английский

Citations

0
Electrical Properties of Fully Depleted Silicon-on-Insulator Wafers DOI

A.K. Aladim

Microelectronics Journal, Journal Year: 2025, Volume and Issue: unknown, P. 106731 - 106731

Published: May 1, 2025

Language: Английский

Citations

0