Area-Selective Molecular Layer Deposition of Alucone on Photoresist for Enhanced Pattern Transfer DOI
Long Liu, Yue Zhang, Wenda Bao

et al.

Chemistry of Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Nov. 27, 2024

Multilayer mask dry etching is commonly used for pattern transfer on industrial lines to reduce the semiconductor component size. One of challenges need improved photoresists (PRs) that combine high resolution and etch selectivity with low complexity material cost. Here, an alternative masking approach using area-selective molecular layer deposition (AS-MLD) has been shown improve resistance accuracy. This technology enables selective alucone into prepatterned PR areas or a class PRs rich in ester groups like poly(methyl methacrylate) (PMMA), avoiding silicon-based substrate. The AS-MLD minimizes feature size variation reduces edge placement errors. In this work, mechanism PMMA inhibition Si-based substrates were investigated detail. alucone-PMMA demonstrates considerable high-energy fluorine plasma etching. Compared original PMMA, by 85 times between alucone-PMMA-trimmed SiON SiO2 can reach as 52 32, respectively. By improving film uniformity thickness control, method simplifies manufacturing process, increases production efficiency, costs. Our addresses urgent extreme ultraviolet (EUV) lithography important step toward achieving reliable high-performance devices.

Language: Английский

Competitive Adsorption of Small Molecule Inhibitors and Trimethylaluminum Precursors on the Cu(111) Surface during Area-Selective Atomic Layer Deposition: A GCMC Study DOI
Chen Li, Yichun Li, Jian Weng

et al.

Langmuir, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 20, 2025

In area-selective atomic layer deposition (AS-ALD), small molecule inhibitors (SMIs) play a critical role in directing surface selectivity, preventing unwanted on non-growth surfaces, and enabling precise thin-film formation essential for semiconductor advanced manufacturing processes. This study utilizes grand canonical Monte Carlo (GCMC) simulations to investigate the competitive adsorption characteristics of three SMIs─aniline, 3-hexyne, propanethiol (PT)─alongside trimethylaluminum (TMA) precursors Cu(111) surface. Single-component analyses reveal that aniline attains highest coverage among SMIs, attributed its strong interaction with Cu surface; however, this decreases by approximately 42% presence TMA, underscoring susceptibility effects. By contrast, 3-hexyne displays minimal alteration when it is competition effectively inhibiting TMA indicating suitability as robust SMI AS-ALD. PT also demonstrates moderate inhibitory capability against although less effective than regard. These findings highlight importance intermolecular forces energies determining effectiveness blocking surfaces. Mechanistic insights from nuanced influence specific SMI–precursor interactions, emphasizing necessity selecting SMIs tailored precursor interactions. work provides contributions rational design AS-ALD, implications improving precision optimizing AS-ALD parameters nanomanufacturing applications.

Language: Английский

Citations

1
Molecular Design in Area-Selective Atomic Layer Deposition: Understanding Inhibitors and Precursors DOI
Yujin Lee, Amnon Rothman, Alexander Shearer

et al.

Chemistry of Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 20, 2025

Language: Английский

Citations

1
Adsorption of trimethylaluminum on period 4 and 5 transition metal surfaces DOI
Hyobin Eom, Sungmin Lee,

Yohan Choi

et al.

Surface Science, Journal Year: 2025, Volume and Issue: unknown, P. 122711 - 122711

Published: Feb. 1, 2025

Language: Английский

Citations

0
Intricacies in the Electrochemical Interface Due to the Surface Structure and Surface Electronics States and Their Probing DOI
Ashis Kumar Satpati, Sudipa Manna

Current Opinion in Electrochemistry, Journal Year: 2025, Volume and Issue: unknown, P. 101675 - 101675

Published: Feb. 1, 2025

Language: Английский

Citations

0
Atomic layer deposited zinc promoted copper catalysts for carbon dioxide hydrogenation to methanol: influence of support DOI Creative Commons
Aitor Arandia,

Jorge Velasco,

Ahmed Sajid

et al.

Catalysis Today, Journal Year: 2025, Volume and Issue: unknown, P. 115283 - 115283

Published: March 1, 2025

Language: Английский

Citations

0
Computational Ab Initio Approaches for Area-Selective Atomic Layer Deposition: Methods, Status, and Perspectives DOI
Fabian Pieck, Ralf Tonner

Chemistry of Materials, Journal Year: 2025, Volume and Issue: unknown

Published: April 4, 2025

Language: Английский

Citations

0
Steric Hindrance and Film Quality in HfO2 Atomic Layer Deposition: Comparative Kinetic Monte Carlo Simulation of TEMA-Hf and HfCp(NMe2)3 Precursors DOI
Haojie Li, Yanwei Wen, Yufei Ge

et al.

Chemistry of Materials, Journal Year: 2025, Volume and Issue: unknown

Published: April 8, 2025

Language: Английский

Citations

0
Atomic layer etching of high-k oxide thin films using hexafluoroacetylacetone and oxygen radicals DOI
Jeongbin Lee, Jieun Oh, Jung‐Tae Kim

et al.

Chemical Engineering Journal, Journal Year: 2025, Volume and Issue: unknown, P. 163280 - 163280

Published: April 1, 2025

Language: Английский

Citations

0
Effect of Al precursor’s properties on interactions with self-assembled monolayers for area selective deposition DOI

Eryan Gu,

Yan Jin,

Boxuan Li

et al.

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Journal Year: 2024, Volume and Issue: 42(6)

Published: Sept. 30, 2024

Area selective deposition (ASD) is a high-precision atomic-level manufacturing technology that enables the development of bottom-up methods in future semiconductor field. The area behavior Al precursors on 1-octadecylthiol (ODT) passivated Cu/SiO2 surfaces was studied through experimental and theoretical analysis. relationship between precursor steric hindrance, symmetry, penetration depth ODT, adsorption energy elucidated. loss selectivity caused by different depths ODT can be post-treated with acids or H2 plasma to remove physisorption molecules chains, thereby improving selectivity. Reliable ASD has been successfully applied patterns. Dimethylaluminum isopropoxide selectively deposit about 10 nm Al2O3 SiO2 without detectable defects Cu area. This provides important insights into choice process extend its application wider range device schemes.

Language: Английский

Citations

1
Stochastic lattice model for atomic layer deposition and area-selective deposition of metal oxides: Visualization and analysis of lateral overgrowth during area-selective deposition DOI
N Carroll, Gregory N. Parsons

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Journal Year: 2024, Volume and Issue: 42(6)

Published: Nov. 14, 2024

Although area-selective deposition (ASD) has developed to augment lithographic patterning of nanoscale device features, computational modeling ASD remains limited. As pitch sizes shrink, the extent lateral overgrowth at feature edge becomes critical processing. We report a stochastic lattice model that describes atomic layer (ALD) and Al2O3 using trimethylaluminum water as an example system. The reactant/surface interactions are constrained such resulting ALD film properties, i.e., Al/O atom ratio, fraction unreacted (blocked) –OH groups, “void” sites, growth per cycle, reasonably consistent with experimental results for ALD. In model, nucleates in localized “growth” region extends laterally over co-planar adjacent “nongrowth” region, thereby simulating evolution. Under “base ALD” condition, is equivalent vertical growth, contact angle between substrate 90°. Introducing additional constraints on reactant/nongrowth surface leads changes extent, shape, enabling insight into chemical physical mechanisms influence shape overgrowth. 3D visualizations directly compared results, demonstrating consistency output experiments. Comparing introduced processes conditions provides drive evolution overgrowth, enhancing understanding means control profile during ASD.

Language: Английский

Citations

1