Triethoxysilane-derived silicon quantum dots: A novel pathway to small size and high crystallinity

Journal of Material Science and Technology, Journal Year: 2024, Volume and Issue: unknown

Published: Nov. 1, 2024

Language: Английский

Colloidal 2D Layered SiC Quantum Dots from a Liquid Precursor: Surface Passivation, Bright Photoluminescence, and Planar Self-Assembly

ACS Nano, Journal Year: 2024, Volume and Issue: unknown

Published: Sept. 17, 2024

We report the bottom-up synthesis of colloidal two-dimensional (2D) layered silicon carbide (SiC) quantum dots with a cubic structure, lateral size 5-10 nm, ⟨110⟩ exfoliation to few atomic layers, and surface passivation 1-dodecene. Samples shielded from oxygen plasma-annealed for purity exhibit narrow blue photoluminescence (PL) yields (QYs) over 60% in exceptional cases, while unshielded nanocrystals (NCs) broad blue/green/white PL 10-15% QY. The latter scenario is attributed excess carbon accrued during processing, separation through ultracentrifugation revealing size-dependent impurity emission. In contrast, shape bright shows little variation NC size, both scenarios, maximum QY occurs near four layers. When dried under heat, disk-like suspensions are observed aggregate into microscale domains, further self-assembly planar superlattice domains common crystalline orientation. results compared photophysical simulations bring clarity emission commonly reported top-down approaches, inspiring schemes directed at improved material quality.

Language: Английский

Facile Synthesis of Silicon Quantum Dots with Photoluminescence in the Near-Ultraviolet to Violet Region via Wet Oxidation

Journal of Materials Chemistry C, Journal Year: 2024, Volume and Issue: unknown

Published: Jan. 1, 2024

We report a facile wet oxidation treatment to obtain SiQDs with PL emission in the NUVV region while elucidating their mechanism.

Language: Английский