Ultraviolet Exciton-Polariton Light-Emitting Diode in a ZnO Microwire Homojunction DOI

Maosheng Liu,

Mingming Jiang,

Qinzhi Zhao

et al.

ACS Applied Materials & Interfaces, Journal Year: 2023, Volume and Issue: 15(10), P. 13258 - 13269

Published: March 3, 2023

Low-dimensional ZnO, possessing well-defined side facets and optical gain properties, has emerged as a promising material to develop ultraviolet coherent light sources. However, the realization of electrically driven ZnO homojunction luminescence laser devices is still challenge due absence reliable p-type ZnO. Herein, sample microwires doped by Sb (ZnO:Sb MWs) was synthesized individually. Subsequently, conductivity examined using single-MW field-effect transistor. Upon pumping, ZnO:Sb MW showing regular hexagonal cross-section smooth sidewall can feature an microcavity, which evidenced achievement whispering-gallery-mode lasing. By combining n-type layer, single light-emitting diode (LED), exhibited typical emission at wavelength 379.0 nm line-width approximately 23.5 nm, constructed. We further illustrated that strong exciton-photon coupling occur in as-constructed p-ZnO:Sb MW/n-ZnO LED researching spatially resolved electroluminescence spectra, contributing exciton-polariton effect. Particularly, varying cross-sectional dimensions wires modulate strengths. anticipate results provide effective exemplification realize tremendously promote development low-dimensional optoelectronic devices.

Language: Английский

Cr3+-Doped NIR Phosphor with Well-Defined Stokes/Anti-Stokes Phonon Sidebands for a Ratiometric Thermometer and Thermally Stable NIR LEDs DOI
Jianhui Wang, Zeyu Lyu,

Guan Peng

et al.

Chemistry of Materials, Journal Year: 2023, Volume and Issue: 35(10), P. 3968 - 3975

Published: May 9, 2023

Near-infrared (NIR) luminescent materials have attracted enormous attention for the cutting-edge applications in optical thermometer and NIR LEDs. Herein, we report a highly efficient Cr3+-doped phosphor, BaAl4Sb2O12:0.024Cr3+ (BASO:Cr3+), with 91% internal quantum efficiency. Strikingly, BASO:Cr3+ possesses rare typical Stokes/anti-Stokes phonon sidebands. The Stokes sideband decreases increasing temperature, while anti-Stokes one increases considerably. Consequently, this inverse change has gifted excellent thermal stability, which maintains 118% of room temperature emission intensity at 423 K. In addition, well-defined sidebands are applied to ratiometric maximum relative sensitivity factor 3.12% K–1 150 Finally, well-performing LED is made BASO:Cr3+, can be used nondestructive testing, information encryption, night vision. Our findings not only shed light on behavior Cr3+ but also point out an avenue thermally stable phosphors sensitive thermometer.

Language: Английский

Citations

32
Development of ultra-broad band light emitting single phase garnet phosphor based on energy transfer mechanism and its applications in optical temperature sensing and WLED DOI
Neeraj Kumar Mishra, Aditya Kumar,

Kaushal Kumar

et al.

Journal of Alloys and Compounds, Journal Year: 2023, Volume and Issue: 947, P. 169440 - 169440

Published: Feb. 26, 2023

Language: Английский

Citations

29
Mn4+ activated phosphors in photoelectric and energy conversion devices DOI
Yang Ding, Chunhua Wang, Lang Pei

et al.

Journal of Energy Chemistry, Journal Year: 2023, Volume and Issue: 86, P. 277 - 299

Published: Aug. 11, 2023

Language: Английский

Citations

27
Moderate Trap Engineering for Enhanced Thermal Stability and High Efficiency in a Bi3+-Doped Phosphor DOI
Shuai Wei, Zeyu Lyu, Zheng Lu

et al.

Chemistry of Materials, Journal Year: 2023, Volume and Issue: 35(17), P. 7125 - 7132

Published: Aug. 29, 2023

Trap engineering is widely applied to contend with thermal quenching of phosphors. However, the incidental detriment luminescent efficiency has long been neglected. Herein, we propose a paradigm for achieving high-performing Bi3+-doped phosphor moderate trap engineering. Through introducing appropriate traps in neutral atmosphere and proper doping concentration, have successfully created novel Ba2GdAlO5:Bi3+ yellow that exhibits exceptional stability (104.1%@423 K) high internal quantum yield (82.78%), which top performance among The oxygen vacancy Bi2+ were identified as responsible through X-ray photoelectron spectroscopy, while their depth was measured be 0.9 eV by using thermoluminescence. Notably, exhibited photochromism upon near-ultraviolet (n-UV) excitation could bleached heat treatment. These observations highlight its potential various applications. Finally, two white lighting devices color rendering index exceeding 90 prepared n-UV LED chips applying one This study not only provides high-performance suitable high-quality (WLED) but also proposes methodology designing phosphors stability..

Language: Английский

Citations

25
Ultraviolet Exciton-Polariton Light-Emitting Diode in a ZnO Microwire Homojunction DOI

Maosheng Liu,

Mingming Jiang,

Qinzhi Zhao

et al.

ACS Applied Materials & Interfaces, Journal Year: 2023, Volume and Issue: 15(10), P. 13258 - 13269

Published: March 3, 2023

Low-dimensional ZnO, possessing well-defined side facets and optical gain properties, has emerged as a promising material to develop ultraviolet coherent light sources. However, the realization of electrically driven ZnO homojunction luminescence laser devices is still challenge due absence reliable p-type ZnO. Herein, sample microwires doped by Sb (ZnO:Sb MWs) was synthesized individually. Subsequently, conductivity examined using single-MW field-effect transistor. Upon pumping, ZnO:Sb MW showing regular hexagonal cross-section smooth sidewall can feature an microcavity, which evidenced achievement whispering-gallery-mode lasing. By combining n-type layer, single light-emitting diode (LED), exhibited typical emission at wavelength 379.0 nm line-width approximately 23.5 nm, constructed. We further illustrated that strong exciton-photon coupling occur in as-constructed p-ZnO:Sb MW/n-ZnO LED researching spatially resolved electroluminescence spectra, contributing exciton-polariton effect. Particularly, varying cross-sectional dimensions wires modulate strengths. anticipate results provide effective exemplification realize tremendously promote development low-dimensional optoelectronic devices.

Language: Английский

Citations

24